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    SEMICONDUCTOR DEVICE
    84.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220123150A1

    公开(公告)日：2022-04-21

    申请号：US17567812

    申请日：2022-01-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Katsuaki TOCHIBAYASHI ,  Yasutaka NAKAZAWA ,  Masatoshi YOKOYAMA

    IPC: H01L29/786 ,  H01L29/45 ,  H01L29/49

    Abstract: It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×1019 atoms/cm3 or lower and the source electrode and the drain electrode include one or more of tungsten, platinum, and molybdenum.

    SEMICONDUCTOR DEVICE
    85.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210184041A1

    公开(公告)日：2021-06-17

    申请号：US17164886

    申请日：2021-02-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Tatsuya HONDA ,  Takehisa HATANO

    IPC: H01L29/786 ,  H01L29/24

    Abstract: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.

    METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL, AND SECONDARY BATTERY
    86.
    发明申请
    METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL, AND SECONDARY BATTERY 有权

    公开(公告)号：US20210028456A1

    公开(公告)日：2021-01-28

    申请号：US17036740

    申请日：2020-09-29

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Masahiro TAKAHASHI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Teruaki OCHIAI ,  Jyo SAITOU

    IPC: H01M4/525 ,  C01G51/00 ,  C01G53/00 ,  H01M10/0525

    Abstract: A positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charging and discharging as compared with those of a known positive electrode active material. In order to form the positive electrode active material having the pseudo-spinel crystal structure in the charged state, it is preferable that a halogen source such as a fluorine and a magnesium source be mixed with particles of a composite oxide containing lithium, a transition metal, and oxygen, which is synthesized in advance, and then the mixture be heated at an appropriate temperature for an appropriate time.

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