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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20240395941A1

    公开(公告)日：2024-11-28

    申请号：US18792762

    申请日：2024-08-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Tatsuya HONDA ,  Takehisa HATANO

    IPC: H01L29/786 ,  H01L29/00 ,  H01L29/04 ,  H01L29/12 ,  H01L29/20 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/772

    Abstract: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.

    METAL OXIDE AND TRANSISTOR INCLUDING METAL OXIDE
    6.
    发明申请
    METAL OXIDE AND TRANSISTOR INCLUDING METAL OXIDE 有权

    公开(公告)号：US20220238718A1

    公开(公告)日：2022-07-28

    申请号：US17616426

    申请日：2020-06-01

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tomosato KANAGAWA ,  Masahiro TAKAHASHI

    IPC: H01L29/786 ,  H01L27/108 ,  H01L27/12 ,  H01L29/24

    Abstract: A novel metal oxide is provided. The metal oxide includes a crystal. The crystal has a structure in which a first layer, a second layer, and a third layer are stacked. The first layer, the second layer, and the third layer are each substantially parallel to a formation surface of the metal oxide. The first layer includes a first metal and oxygen. The second layer includes a second metal and oxygen. The third layer includes a third metal and oxygen. The first layer has an octahedral structure. The second layer has a trigonal bipyramidal structure or a tetrahedral structure. The third layer has a trigonal bipyramidal structure or a tetrahedral structure. The octahedral structure of the first layer includes an atom of the first metal at a center. The trigonal bipyramidal structure or the tetrahedral structure of the second layer includes an atom of the second metal at a center. The trigonal bipyramidal structure or the tetrahedral structure of the third layer includes an atom of the third metal at a center. The valence of the first metal is equal to the valence of the second metal. The valence of the first metal is different from the valence of the third metal.

    METHOD FOR FORMING POSITIVE ELECTRODE ACTIVE MATERIAL
    7.
    发明申请
    METHOD FOR FORMING POSITIVE ELECTRODE ACTIVE MATERIAL 有权

    公开(公告)号：US20220173394A1

    公开(公告)日：2022-06-02

    申请号：US17441808

    申请日：2020-03-23

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yohei MOMMA ,  Teruaki OCHIAI ,  Mayumi MIKAMI ,  Jo SAITO ,  Masahiro TAKAHASHI

    IPC: H01M4/58 ,  H01M4/36 ,  H01M4/04 ,  H01M4/48

    Abstract: A method for forming a positive electrode active material of a lithium ion secondary battery is provided. The method for forming a positive electrode active material includes a first step of placing a first container in which a mixture of a lithium oxide, a fluoride, and a magnesium compound are put, in a heating furnace, a second step of providing an atmosphere including oxygen in an inside of the heating furnace, and a third step of heating the inside of the heating furnace. The third step is performed after the first step and the second step are performed. Preferably, an atmosphere including oxygen is provided in the heating furnace before the inside of the heating furnace is heated. More preferably, the fluoride is lithium fluoride and the magnesium compound is magnesium fluoride.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210280718A1

    公开(公告)日：2021-09-09

    申请号：US17257921

    申请日：2019-07-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Daisuke MATSUBAYASHI ,  Yuichi YANAGISAWA ,  Masahiro TAKAHASHI

    IPC: H01L29/786 ,  H01L29/10

    Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.

    METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL, AND SECONDARY BATTERY
    10.
    发明申请
    METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL, AND SECONDARY BATTERY 有权

    公开(公告)号：US20210020935A1

    公开(公告)日：2021-01-21

    申请号：US17036611

    申请日：2020-09-29

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Masahiro TAKAHASHI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Teruaki OCHIAI ,  Jyo SAITOU

    IPC: H01M4/525 ,  C01G51/00 ,  C01G53/00 ,  H01M10/0525

    Abstract: A positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charging and discharging as compared with those of a known positive electrode active material. In order to form the positive electrode active material having the pseudo-spinel crystal structure in the charged state, it is preferable that a halogen source such as a fluorine and a magnesium source be mixed with particles of a composite oxide containing lithium, a transition metal, and oxygen, which is synthesized in advance, and then the mixture be heated at an appropriate temperature for an appropriate time.

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