公开(公告)号：US20200264471A1

公开(公告)日：2020-08-20

申请号：US16865672

申请日：2020-05-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20240192558A1

公开(公告)日：2024-06-13

申请号：US18527464

申请日：2023-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

CPC classification number: G02F1/136227 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136277 ,  G02F1/134372 ,  G02F2202/02 ,  G02F2202/10

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20210072605A1

公开(公告)日：2021-03-11

申请号：US17082094

申请日：2020-10-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20180374957A1

公开(公告)日：2018-12-27

申请号：US16110488

申请日：2018-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro KATAYAMA ,  Yasutaka NAKAZAWA ,  Masatoshi YOKOYAMA ,  Masahiko HAYAKAWA ,  Kenichi OKAZAKI ,  Shunsuke KOSHIOKA

IPC: H01L29/786 ,  H01L27/12 ,  G09G3/20 ,  G09G5/00 ,  G06F3/041 ,  G09G3/36

Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.

公开(公告)号：US20200026118A1

公开(公告)日：2020-01-23

申请号：US16583817

申请日：2019-09-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20180329244A1

公开(公告)日：2018-11-15

申请号：US16026227

申请日：2018-07-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1368 ,  H01L29/786 ,  G02F1/1333 ,  H01L29/423 ,  H01L29/24 ,  H01L29/04 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1362

CPC classification number: G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F2001/134372 ,  G02F2202/02 ,  G02F2202/10

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20160246090A1

公开(公告)日：2016-08-25

申请号：US15144916

申请日：2016-05-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1368 ,  H01L29/24 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1333 ,  G02F1/1343 ,  H01L29/786 ,  H01L29/423

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136277 ,  G02F2001/134372 ,  G02F2202/02 ,  G02F2202/10 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/7869

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20140022480A1

公开(公告)日：2014-01-23

申请号：US13942468

申请日：2013-07-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1333

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136277 ,  G02F2001/134372 ,  G02F2202/02 ,  G02F2202/10 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/7869

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

Abstract translation: 为了抑制由于来自有机绝缘膜的释放气体导致的晶体管的特性的变化，使得显示装置的可靠性增加。 显示装置包括晶体管，设置在晶体管上方的有机绝缘膜，以减少由于晶体管引起的不均匀性以及有机绝缘膜上的电容器。 有机绝缘膜的整个表面没有被电容器的部件（透明导电层和无机绝缘膜）覆盖，并且来自有机绝缘膜的释放气体可以从上表面的暴露部分释放到外部 的有机绝缘膜。

公开(公告)号：US20220137469A1

公开(公告)日：2022-05-05

申请号：US17580742

申请日：2022-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi YOKOYAMA ,  Shigeki KOMORI ,  Manabu SATO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US20150270403A1

公开(公告)日：2015-09-24

申请号：US14659792

申请日：2015-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro KATAYAMA ,  Yasutaka NAKAZAWA ,  Masatoshi YOKOYAMA ,  Masahiko HAYAKAWA ,  Kenichi OKAZAKI ,  Shunsuke KOSHIOKA

IPC: H01L29/786 ,  H01L29/04 ,  G09G5/00 ,  H01L27/12 ,  G06F3/047 ,  H01L29/24 ,  H01L29/45

CPC classification number: H01L29/7869 ,  G06F3/041 ,  G09G3/20 ,  G09G3/3674 ,  G09G3/3677 ,  G09G3/3685 ,  G09G3/3688 ,  G09G5/003 ,  G09G2300/0404 ,  G09G2300/0426 ,  G09G2310/0267 ,  G09G2310/0275 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78606

Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.

Abstract translation: 提供一种包括晶体管和电连接到晶体管的布线的半导体器件，其中由于其特定结构而具有优异的电特性。 第一导电膜，第一导电膜上的第一绝缘膜，第一绝缘膜上的第二导电膜，第二导电膜上的第二绝缘膜，通过开口电连接到第一导电膜的第三导电膜 在第一绝缘膜和第二绝缘膜中，并且在第三导电膜上设置第三绝缘膜。 第三导电膜包括铟，锡和氧，第三绝缘膜包括硅和氮，并且通过热解吸光谱法从第三绝缘膜释放的氨分子的数量小于或等于1×1015分子/ cm 3。