公开(公告)号：US20130192760A1

公开(公告)日：2013-08-01

申请号：US13755408

申请日：2013-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Yuki Osada

IPC: H05H1/46 ,  H01L21/3065

CPC classification number: H05H1/46 ,  H01J37/32027 ,  H01J37/32192 ,  H01J37/32293 ,  H01L21/3065 ,  H05H2001/4615

Abstract: A microwave emitting device emits a microwave generated by a microwave generation unit into a chamber in a plasma processing apparatus for performing plasma processing by generating a surface wave plasma in the chamber. The device includes: a transmission line having a tubular outer conductor and an inner conductor disposed in the outer conductor to transmit the microwave; an antenna to emit the microwave transmitted through the microwave transmission line into the chamber through slots; a dielectric member to transmit the microwave emitted from the antenna to generate a surface wave; and a DC voltage application member to apply a positive DC voltage to a plasma generation region where a surface wave plasma is generated by the surface wave.

Abstract translation: 微波发射装置将由微波产生单元产生的微波发射到等离子体处理装置中的室中，以通过在腔室中产生表面波等离子体来执行等离子体处理。 该装置包括：传输线，其具有管状外部导体和设置在外部导体中以传送微波的内部导体; 天线，通过狭缝发射通过微波传输线传输到室中的微波; 电介质部件，用于透过从天线发出的微波，产生表面波; 以及直流电压施加构件，用于对由表面波产生表面波等离子体的等离子体产生区域施加正的直流电压。