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公开(公告)号：US20140315347A1
公开(公告)日：2014-10-23
申请号：US14217342
申请日：2014-03-17
CPC分类号： H05H1/46 , H01L21/67017 , H01L21/67155 , H01L31/18 , H05H2001/4615 , H05H2001/463
摘要： Systems and methods are described herein for generating surface-wave plasmas capable of simultaneously achieving high density with low temperature and planar scalability. A key feature of the invention is reduced damage to objects in contact with the plasma due to the lack of an RF bias; allowing for damage free processing. The preferred embodiment is an all-in-one processing reactor suitable for photovoltaic cell manufacturing, performing saw-damage removal, oxide stripping, deposition, doping and formation of heterostructures. The invention is scalable for atomic-layer deposition, etching, and other surface interaction processes.
摘要翻译： 本文描述了用于产生能够同时实现具有低温度和平面可伸缩性的高密度的表面波等离子体的系统和方法。 本发明的关键特征是由于缺少RF偏压而减少与等离子体接触的物体的损坏; 允许无损处理。 优选的实施方案是适用于光伏电池制造，执行锯切损伤去除，氧化物剥离，沉积，掺杂和形成异质结构的一体化处理反应器。 本发明可用于原子层沉积，蚀刻和其它表面相互作用过程。
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公开(公告)号：US20130334955A1
公开(公告)日：2013-12-19
申请号：US14002054
申请日：2012-02-15
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , A45D27/46 , A46B17/06 , C01B13/10 , C02F1/4608 , C02F1/72 , C02F1/78 , H05H1/2406 , H05H2001/4615
摘要： A plasma generator includes: a liquid containing part containing water; a gas containing part; and a partition wall part that separates the liquid containing part and the gas containing part and is provided with a gas passage through which the gas in the gas containing part is led to the liquid containing part. The plasma generator is also provided with a first electrode arranged in the gas containing part and a second electrode arranged to be in contact with the liquid in the liquid containing part. The plasma generator is further provided with: a gas supply unit which supplies the gas to the gas containing part; a plasma power supply unit; and a projected part which serves as a drainage promotion part that prevents the liquid from remaining in the gas passage after the liquid in the liquid containing part is drained.
摘要翻译： 等离子体发生器包括：包含水的含液体; 含气体的部件; 以及分隔液体容纳部分和气体容纳部分并且设置有气体通道的分隔壁部分，气体容纳部分中的气体通过该气体通道被引导到液体容纳部分。 等离子体发生器还设置有布置在气体容纳部分中的第一电极和布置成与液体容纳部分中的液体接触的第二电极。 等离子体发生器还设置有：气体供应单元，其将气体供应到气体容纳部分; 等离子体电源单元; 以及作为排水促进部的突出部，其在液体容纳部中的液体被排出之后防止液体残留在气体通道中。
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公开(公告)号：US20140028184A1
公开(公告)日：2014-01-30
申请号：US13720485
申请日：2012-12-19
发明人： Sergey A. Voronin , Alok Ranjan
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H05H2001/4615 , H05H2001/463
摘要： A surface wave plasma source (SWPS) is disclosed, having an electromagnetic (EM) wave launcher including a slot antenna configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the SWPS adjacent the plasma. The SWPS also includes a dielectric window positioned below the slot antenna, having a lower surface and the plasma surface. The SWPS further includes an attenuation assembly disposed between the slot antenna and the plasma surface. The attenuation assembly includes a first fluid channel substantially aligned with a first arrangement of slots in the slot antenna, and is configured to receive a first flow of a first fluid at a first fluid temperature. The SWPS finally includes a power coupling system coupled to the EM wave launcher and configured to provide EM energy to the EM wave launcher for forming the plasma.
摘要翻译： 公开了一种表面波等离子体源（SWPS），其具有电磁（EM）波发射器，其包括缝隙天线，缝隙天线被配置为通过在相邻的SWPS的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体 等离子体。 SWPS还包括位于缝隙天线下方的介电窗口，具有下表面和等离子体表面。 SWPS还包括设置在缝隙天线和等离子体表面之间的衰减组件。 衰减组件包括基本上与缝隙天线中的槽的第一布置基本对准的第一流体通道，并且构造成在第一流体温度下接收第一流体的第一流。 SWPS最终包括耦合到EM波发射器的功率耦合系统，并被配置为向用于形成等离子体的EM波发射器提供EM能量。
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4.发明授权System and method for surface decontamination using electromagnetic surface waves 失效使用电磁表面波进行表面去污的系统和方法公开(公告)号：US07931858B1
公开(公告)日：2011-04-26
申请号：US12144134
申请日：2008-06-23
IPC分类号： A61L2/02
CPC分类号： A61L2/14 , A61L2202/11 , H05H1/46 , H05H2001/4615 , H05H2245/123
摘要： A method of decontaminating a surface is provided. A surface to propagate electromagnetic surface waves is provided having a frequency in the microwave spectrum between 1 GHz and 1000 GHz. The surface includes a surface-wave medium or the surface-wave medium is laminated on the surface for confining the electromagnetic surface waves to the surface. The surface-wave medium includes a conductive ground plane. A dielectric is provided on the ground plane. A metallic pattern is provided on the dielectric for increasing an inductive reactance of the surface-wave medium. Electromagnetic surface waves are transmitted onto the surface from a surface-wave coupler coupled to the surface for destroying, removing, or neutralizing chemical or biological surface contaminants. The surface contaminants are destroyed, removed, or neutralized with a plasma created by the electromagnetic surface waves or through absorption of the electromagnetic surface waves.
摘要翻译： 提供一种净化表面的方法。 提供具有在1GHz和1000GHz之间的微波频谱中的频率的用于传播电磁表面波的表面。 表面包括表面波介质或表面波介质层压在表面上以将电磁表面波限制在表面上。 表面波介质包括导电接地平面。 在接地平面上提供电介质。 在电介质上提供金属图案以增加表面波介质的感抗。 电磁表面波从耦合到表面的表面波耦合器传播到表面上，用于破坏，去除或中和化学或生物表面污染物。 表面污染物被由电磁表面波产生的等离子体或通过吸收电磁表面波而被破坏，去除或中和。
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5.发明授权Adjustable slot antenna for control of uniformity in a surface wave plasma source 有权可调缝隙天线，用于控制表面波等离子体源的均匀性公开(公告)号：US09155183B2
公开(公告)日：2015-10-06
申请号：US13750392
申请日：2013-01-25
发明人： Sergey A. Voronin , Alok Ranjan
CPC分类号： H05H1/46 , H05H2001/4615 , H05H2001/463
摘要： The present invention provides a surface wave plasma source including an electromagnetic (EM) wave launcher comprising a slot antenna having a plurality of antenna slots configured to couple the EM energy from a first region above the slot antenna to a second region below the slot antenna, and a power coupling system is coupled to the EM wave launcher. A dielectric window is positioned in the second region and has a lower surface including the plasma surface. A slotted gate plate is arranged parallel with the slot antenna and is configured to be movable relative to the slot antenna between variable opacity positions including a first opaque position to prevent the EM energy from passing through the first arrangements of antenna slots, and a first transparent position to allow a full intensity of the EM energy to pass through the first arrangement of antenna slots.
摘要翻译： 本发明提供了一种表面波等离子体源，其包括电磁（EM）波发射器，其包括缝隙天线，缝隙天线具有多个天线缝隙，其被配置为将来自缝隙天线上方的第一区域的EM能量耦合到缝隙天线下方的第二区域， 并且功率耦合系统耦合到EM波发射器。 电介质窗口位于第二区域中，并且具有包括等离子体表面的下表面。 开槽栅极板与缝隙天线平行设置，并且被配置为在包括第一不透明位置的可变不透明位置之间相对于缝隙天线移动以防止EM能量穿过天线槽的第一布置，以及第一透明 以允许EM能量的全部强度通过天线槽的第一布置。
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6.发明授权Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus 有权低电子温度微波表面波等离子体（SWP）处理方法及装置公开(公告)号：US08968588B2
公开(公告)日：2015-03-03
申请号：US13436458
申请日：2012-03-30
申请人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
发明人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32293 , H05H1/46 , H05H2001/4615 , H05H2001/463
摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
摘要翻译： 表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源 该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。
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7.发明申请LOW ELECTRON TEMPERATURE MICROWAVE SURFACE-WAVE PLASMA (SWP) PROCESSING METHOD AND APPARATUS 有权低电子温度微波表面波等离子体（SWP）处理方法和装置公开(公告)号：US20130256272A1
公开(公告)日：2013-10-03
申请号：US13436458
申请日：2012-03-30
申请人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
发明人： Jianping Zhao , Lee Chen , Vincent M. Donnelly , Demetre J. Economou , Merritt Funk , Radha Sundararajan
IPC分类号： H05H1/24 , B44C1/22 , C23C16/511 , C23C16/52
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32293 , H05H1/46 , H05H2001/4615 , H05H2001/463
摘要： A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.
摘要翻译： 表面波等离子体（SWP）源通过例如径向线缝隙天线将脉冲微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 为了在脉冲之间的等离子体密度低的情况下防止微波能量暴露在基板的表面上，在SWP源和SWP源之间提供诸如螺旋感应源，平面RF线圈或其他电感耦合源的ICP源 该衬底产生对微波能量不透明的等离子体。 ICP源也可以与MW等离子体的脉冲同步脉冲同步，随着MW脉冲的上升。 ICP还将等离子体的边缘致密分布添加到通常以室为中心的MW等离子体以改善等离子体均匀性。
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公开(公告)号：US08124013B1
公开(公告)日：2012-02-28
申请号：US12144123
申请日：2008-06-23
申请人： Daniel J. Gregoire , Kevin W. Kirby
发明人： Daniel J. Gregoire , Kevin W. Kirby
IPC分类号： A61L2/02
CPC分类号： H05H1/46 , H05H2001/4615
摘要： A plasma generating system and a method of generating a plasma on a surface is provided. A surface-wave medium is laminated to a surface for propagating electromagnetic surface waves. The surface-wave medium includes a dielectric and a metallic pattern on the dielectric for increasing an inductive reactance of the surface-wave medium. The plasma generating surface further includes a microwave power source. A coupler couples the microwave power source to the surface-wave medium. A plurality of field enhancement points are located on the surface-wave medium. The plurality of field enhancement points include microwave resonant structures that couple to the electromagnetic surface waves.
摘要翻译： 提供了等离子体发生系统和在表面上产生等离子体的方法。 将表面波介质层叠到用于传播电磁表面波的表面上。 表面波介质在电介质上包括电介质和金属图案，以增加表面波介质的感抗。 等离子体产生表面还包括微波功率源。 耦合器将微波功率源耦合到表面波介质。 多个场增强点位于表面波介质上。 多个场增强点包括耦合到电磁表面波的微波谐振结构。
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公开(公告)号：US20040031289A1
公开(公告)日：2004-02-19
申请号：US10219861
申请日：2002-08-15
IPC分类号： C03B037/018
CPC分类号： C03B37/01426 , C03B2201/24 , C03C25/1061 , H05H2001/4615 , Y02P40/57
摘要： A method is disclosed for the manufacture of optical fiber preforms using plasma enhanced chemical vapor deposition (PECVD). The invention consists of a cylindrical reactor in which material such as flourine-doped silica glass is deposited on a cylindrical silica rod. A furnace for regulating reactor temperature encases the reactor. A microwave generator coupled with a resonator and an H10 waveguide delivers microwave energy to the reactor, producing simultaneously symmetrical excitations in the E010 mode and a plasma surface wave in E01 mode located at the surface of the rod. A microwave plasma is scanned along the length of the rod through a slit in the reactor to deposit a homogeneous film of a desired thickness. The benefits of the present invention over the prior art include increased absorption of delivered power, and the ability to uniformly deposit films such as flourine-doped silica on rods with diameters of up to 30-35 mm and thus produce optical fiber preforms with diameters greater than 40 mm.
摘要翻译： 公开了一种使用等离子体增强化学气相沉积（PECVD）制造光纤预制件的方法。 本发明由圆柱形反应器组成，其中诸如掺杂有掺杂的二氧化硅玻璃的材料沉积在圆柱形二氧化硅棒上。 用于调节反应器温度的炉包装反应堆。 与谐振器和H10波导耦合的微波发生器将微波能量传递到反应器，在E010模式中产生同时对称的激发，并且在位于棒表面的E01模式中产生等离子体表面波。 沿着杆的长度扫描微波等离子体通过反应器中的狭缝，以沉积所需厚度的均质膜。 本发明相对于现有技术的优点包括增加的输送功率的吸收，以及将直径为30-35mm的棒均匀沉积诸如掺杂氟的二氧化硅的膜的能力，从而产生直径更大的光纤预制棒 超过40毫米。
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公开(公告)号：US09867269B2
公开(公告)日：2018-01-09
申请号：US14217342
申请日：2014-03-17
CPC分类号： H05H1/46 , H01L21/67017 , H01L21/67155 , H01L31/18 , H05H2001/4615 , H05H2001/463
摘要： Systems and methods are described herein for generating surface-wave plasmas capable of simultaneously achieving high density with low temperature and planar scalability. A key feature of the invention is reduced damage to objects in contact with the plasma due to the lack of an RF bias; allowing for damage free processing. The preferred embodiment is an all-in-one processing reactor suitable for photovoltaic cell manufacturing, performing saw-damage removal, oxide stripping, deposition, doping and formation of heterostructures. The invention is scalable for atomic-layer deposition, etching, and other surface interaction processes.
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