-
公开(公告)号:US11522133B2
公开(公告)日:2022-12-06
申请号:US16284932
申请日:2019-02-25
申请人: Cerfe Labs, Inc.
发明人: Carlos Alberto Paz de Araujo , Jolanta Bozena Celinska , Christopher Randolph McWilliams , Lucian Shifren , Kimberly Gay Reid
IPC分类号: H01L45/00
摘要: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.
-
公开(公告)号:US20220293766A1
公开(公告)日:2022-09-15
申请号:US17695497
申请日:2022-03-15
申请人: Cerfe Labs, Inc.
IPC分类号: H01L29/51 , H01L29/78 , H01L29/66 , H01L27/11585
摘要: A device stack for an electronic memory or other device includes a substrate and first and second layers of insulating material. The first layer of insulating material is supported by the substrate. A semiconducting ferroelectric layer is positioned and electrically isolated between the first and second layers of insulating material. An electrode is positioned onto or above the second layer of insulating material. In some embodiments, the device is a Metal-Insulator-FeS-Insulator-Semiconductor (MIFIS) device that allows for controlled switching of the semiconducting ferroelectric (FeS) layer between various polarization states. Switching polarization states is enabled by application of an electric field by the electrode.
-
公开(公告)号:US11636316B2
公开(公告)日:2023-04-25
申请号:US15884612
申请日:2018-01-31
申请人: Cerfe Labs, Inc.
摘要: Broadly speaking, the present techniques exploit the properties of correlated electron materials for artificial neural networks and neuromorphic computing. In particular, the present techniques provide apparatuses/devices that comprise at least one correlated electron switch (CES) element and which may be used as, or to form, an artificial neuron or an artificial synapse.
-
公开(公告)号:US20220328651A1
公开(公告)日:2022-10-13
申请号:US17715716
申请日:2022-04-07
申请人: Cerfe Labs, Inc.
摘要: A device stack for an electronic memory or other device includes a substrate and first and second layers of insulating material. The first layer of insulating material is supported by the substrate. A semiconducting ferroelectric layer is positioned and electrically isolated between the first and second layers of insulating material. A stress layer capable of converting a ferroelectric or semiconductor material into a semiconducting ferroelectric material can be positioned in contact with the semiconducting ferroelectric layer. In some embodiments, the device is a Metal-Insulator-FeS-Insulator-Semiconductor (MIFIS) device that allows for controlled switching of the semiconducting ferroelectric (FeS) layer between various polarization states. Switching polarization states is enabled by application of an electric field by a semiconducting electrode.
-
公开(公告)号:US11075339B2
公开(公告)日:2021-07-27
申请号:US16163246
申请日:2018-10-17
申请人: Cerfe Labs, Inc.
发明人: Ming He , Paul Raymond Besser , Jingyan Zhang , Manuj Rathor
IPC分类号: H01L45/00
摘要: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, an insulative material may be formed on or over a sidewall portion of a conductive contact region. The insulative material may insulate the conductive contact region from resputtered CEM occurring during a physical etch of a CEM film.
-
公开(公告)号:US11258010B2
公开(公告)日:2022-02-22
申请号:US16569495
申请日:2019-09-12
申请人: Cerfe Labs, Inc.
发明人: Carlos Alberto Paz de Araujo , Saurabh Vinayak Suryavanshi , Lucian Shifren , Jolanta Bozena Celinska
IPC分类号: H01L45/00
摘要: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) such as in a CEM device capable of switching between and/or among impedance states. In particular embodiments, a CEM may be formed from one or more transition metal oxides (TMOs), one or more post transition metal oxides (PTMOs) or one or more post transition metal chalcogenides (PTMCs), or a combination thereof.
-
公开(公告)号:US20210257534A1
公开(公告)日:2021-08-19
申请号:US16790729
申请日:2020-02-13
申请人: Cerfe Labs, Inc.
摘要: Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.
-
公开(公告)号:US20210083186A1
公开(公告)日:2021-03-18
申请号:US16569495
申请日:2019-09-12
申请人: Cerfe Labs, Inc.
发明人: Carlos Alberto Paz de Araujo , Saurabh Vinayak Suryavanshi , Lucian Shifren , Jolanta Bozena Celinska
IPC分类号: H01L45/00
摘要: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) such as in a CEM device capable of switching between and/or among impedance states. In particular embodiments, a CEM may be formed from one or more transition metal oxides (TMOs), one or more post transition metal oxides (PTMOs) or one or more post transition metal chalcogenides (PTMCs), or a combination thereof.
-
公开(公告)号:US11201276B2
公开(公告)日:2021-12-14
申请号:US16790729
申请日:2020-02-13
申请人: Cerfe Labs, Inc.
摘要: Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.
-
公开(公告)号:US11183998B2
公开(公告)日:2021-11-23
申请号:US15659288
申请日:2017-07-25
申请人: Cerfe Labs, Inc.
发明人: Lucian Shifren
IPC分类号: H03L5/00 , H03K17/041 , G11C13/00 , H01L45/00 , H03K17/567 , H03K19/20 , H03H11/12
摘要: Subject matter disclosed herein may relate to correlated electron switches.
-
-
-
-
-
-
-
-
-