Semiconducting Ferroelectric Device

    公开(公告)号:US20220293766A1

    公开(公告)日:2022-09-15

    申请号:US17695497

    申请日:2022-03-15

    申请人: Cerfe Labs, Inc.

    摘要: A device stack for an electronic memory or other device includes a substrate and first and second layers of insulating material. The first layer of insulating material is supported by the substrate. A semiconducting ferroelectric layer is positioned and electrically isolated between the first and second layers of insulating material. An electrode is positioned onto or above the second layer of insulating material. In some embodiments, the device is a Metal-Insulator-FeS-Insulator-Semiconductor (MIFIS) device that allows for controlled switching of the semiconducting ferroelectric (FeS) layer between various polarization states. Switching polarization states is enabled by application of an electric field by the electrode.

    Semiconducting Ferroelectric Device with Silicon Doped Electrode

    公开(公告)号:US20220328651A1

    公开(公告)日:2022-10-13

    申请号:US17715716

    申请日:2022-04-07

    申请人: Cerfe Labs, Inc.

    摘要: A device stack for an electronic memory or other device includes a substrate and first and second layers of insulating material. The first layer of insulating material is supported by the substrate. A semiconducting ferroelectric layer is positioned and electrically isolated between the first and second layers of insulating material. A stress layer capable of converting a ferroelectric or semiconductor material into a semiconducting ferroelectric material can be positioned in contact with the semiconducting ferroelectric layer. In some embodiments, the device is a Metal-Insulator-FeS-Insulator-Semiconductor (MIFIS) device that allows for controlled switching of the semiconducting ferroelectric (FeS) layer between various polarization states. Switching polarization states is enabled by application of an electric field by a semiconducting electrode.

    Switch Cell Device
    7.
    发明申请

    公开(公告)号:US20210257534A1

    公开(公告)日:2021-08-19

    申请号:US16790729

    申请日:2020-02-13

    申请人: Cerfe Labs, Inc.

    摘要: Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.

    Switch cell device
    9.
    发明授权

    公开(公告)号:US11201276B2

    公开(公告)日:2021-12-14

    申请号:US16790729

    申请日:2020-02-13

    申请人: Cerfe Labs, Inc.

    摘要: Various implementations described herein are related to a device having multiple conductive terminals formed with a superconductive material. The device may include at least one switching layer formed with correlated-electron material (CEM) that is disposed between the multiple conductive terminals. The CEM may comprise carbon or a carbon based compound. The device may refer to a switch structure or similar.