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公开(公告)号：US20090316476A1
公开(公告)日：2009-12-24
申请号：US12485359
申请日：2009-06-16
CPC分类号： H01L27/228 , G11C5/063 , G11C11/1659 , G11C11/1675
摘要： A memory unit with one field line; at least two thermally-assisted switching magnetic tunnel junction-based magnetic random access memory cells, each cell comprising a magnetic tunnel junction having an insulating layer disposed between a magnetic storage layer and a magnetic reference layer; wherein a selection transistor is connected to the magnetic tunnel junction; the one field line is used for passing a field current for switching a magnetization of the storage layer of the magnetic tunnel junctions of the cells. A magnetic memory device can be formed by assembling an array of the memory units, wherein at least two adjacent magnetic tunnel junctions of the cells can be addressed simultaneously by the field line. The memory unit and magnetic memory device have a reduced surface area. Magnetic memory devices with an increased density of memory units can be fabricated resulting in lower die fabrication cost and lower power consumption.
摘要翻译： 具有一个场线的存储单元; 至少两个热辅助切换磁隧道结磁性随机存取存储器单元，每个单元包括具有设置在磁存储层和磁参考层之间的绝缘层的磁性隧道结; 其中选择晶体管连接到所述磁性隧道结; 一个场线用于通过用于切换单元的磁隧道结的存储层的磁化的场电流。 可以通过组装存储器单元的阵列来形成磁存储器件，其中可以通过场线同时寻址单元的至少两个相邻磁隧道结。 存储单元和磁存储器件具有减小的表面积。 可以制造具有增加的存储器单元密度的磁存储器件，从而导致较低的管芯制造成本和较低的功率消耗。
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2.发明授权System and method for providing content-addressable magnetoresistive random access memory cells 有权用于提供内容寻址磁阻随机存取存储单元的系统和方法公开(公告)号：US07894228B2
公开(公告)日：2011-02-22
申请号：US12422752
申请日：2009-04-13
IPC分类号： G11C15/02
CPC分类号： G11C15/046 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C15/02
摘要： A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.
摘要翻译： 一种具有磁性隧道结的存储单元的内容寻址随机存取存储器及其制造和使用方法。 磁隧道结具有第一和第二磁性层，并且可以用作数据存储和数据感测。 在每个单元内，通过在一个或多个电流线路中经由电流脉冲设置磁性隧道结中的第一磁性层的磁性取向来写入登记数据。 用于与登记数据进行比较的输入数据可以通过第二磁性层经由电流线的磁取向相似地设定。 数据检测通过测量电池电阻来执行，这取决于磁性层的相对磁性取向。 由于数据存储，数据输入和数据检测被集成到一个单元中，存储器将较高密度与非易失性相结合。 内存可以支持高速，降低功耗和数据屏蔽。
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公开(公告)号：US20110007561A1
公开(公告)日：2011-01-13
申请号：US12832472
申请日：2010-07-08
申请人： Neal Berger , Jean-Pierre Nozieres
发明人： Neal Berger , Jean-Pierre Nozieres
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/1673
摘要： The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.
摘要翻译： 本公开涉及一种磁性随机存取存储单元，其包含由包括感测层和存储层之间的绝缘层形成的磁性隧道结。 本公开还涉及一种用于写入和读取存储单元的方法，包括在写入操作期间切换所述存储层的磁化方向以将数据写入所述存储层，并且在读取操作期间，对准所述感测层的磁化方向 在第一对准方向上，并且通过测量所述磁性隧道结的第一电阻值来比较所述写入数据与所述第一对准方向。 所公开的存储单元和方法允许以低功耗和增加的速度执行写入和读取操作。
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公开(公告)号：US20140269042A1
公开(公告)日：2014-09-18
申请号：US14294239
申请日：2014-06-03
发明人： Neal Berger , Jean-Pierre Nozières
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/1673
摘要： The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.
摘要翻译： 本公开涉及一种磁性随机存取存储单元，其包含由包括感测层和存储层之间的绝缘层形成的磁性隧道结。 本公开还涉及一种用于写入和读取存储单元的方法，包括在写入操作期间切换所述存储层的磁化方向以将数据写入所述存储层，并且在读取操作期间，对准所述感测层的磁化方向 在第一对准方向上，并且通过测量所述磁性隧道结的第一电阻值来比较所述写入数据与所述第一对准方向。 所公开的存储单元和方法允许以低功耗和增加的速度执行写入和读取操作。
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5.发明授权System and method for writing data to magnetoresistive random access memory cells 有权将数据写入磁阻随机存取存储单元的系统和方法公开(公告)号：US08169815B2
公开(公告)日：2012-05-01
申请号：US12418747
申请日：2009-04-06
申请人： Virgile Javerliac , Neal Berger
发明人： Virgile Javerliac , Neal Berger
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/1675
摘要： Magnetic random access memory (MRAM) cell with a thermally assisted switching writing procedure and methods for manufacturing and using same. The MRAM cell includes a magnetic tunnel junction that has at least a first magnetic layer, a second magnetic layer, and an insulating layer disposed between the first and a second magnetic layers. The MRAM cell further includes a select transistor and a current line electrically connected to the junction. The current line advantageously can support a plurality of MRAM operational functions. The current line can fulfill a first function for passing a first portion of current for heating the junction and a second function for passing a second portion of current in order to switch the magnetization of the first magnetic layer.
摘要翻译： 具有热辅助切换写入程序的磁性随机存取存储器（MRAM）单元及其制造和使用方法。 MRAM单元包括具有至少第一磁性层，第二磁性层和设置在第一和第二磁性层之间的绝缘层的磁性隧道结。 MRAM单元进一步包括选择晶体管和电连接到该结的电流线。 当前行有利地可以支持多个MRAM操作功能。 当前线可以实现用于通过用于加热结的电流的第一部分的第一功能和用于通过第二部分电流以便切换第一磁性层的磁化的第二功能。
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6.发明授权System and method for providing content-addressable magnetoresistive random access memory cells 有权用于提供内容寻址磁阻随机存取存储单元的系统和方法公开(公告)号：US07791917B2
公开(公告)日：2010-09-07
申请号：US12348830
申请日：2009-01-05
IPC分类号： G11C15/02
CPC分类号： G11C15/046 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C15/02
摘要： A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.
摘要翻译： 一种具有磁性隧道结的存储单元的内容寻址随机存取存储器及其制造和使用方法。 磁隧道结具有第一和第二磁性层，并且可以用作数据存储和数据感测。 在每个单元内，通过在一个或多个电流线路中经由电流脉冲设置磁性隧道结中的第一磁性层的磁性取向来写入登记数据。 用于与登记数据进行比较的输入数据可以通过第二磁性层经由电流线的磁取向相似地设定。 数据检测通过测量电池电阻来执行，这取决于磁性层的相对磁性取向。 由于数据存储，数据输入和数据检测被集成到一个单元中，存储器将较高密度与非易失性相结合。 内存可以支持高速，降低功耗和数据屏蔽。
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7.发明授权System and method for providing content-addressable magnetoresistive random access memory cells 有权用于提供内容寻址磁阻随机存取存储单元的系统和方法公开(公告)号：US07518897B2
公开(公告)日：2009-04-14
申请号：US11869632
申请日：2007-10-09
IPC分类号： G11C15/02
CPC分类号： G11C15/046 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C15/02
摘要： A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.
摘要翻译： 一种具有磁性隧道结的存储单元的内容寻址随机存取存储器及其制造和使用方法。 磁隧道结具有第一和第二磁性层，并且可以用作数据存储和数据感测。 在每个单元内，通过在一个或多个电流线路中经由电流脉冲设置磁性隧道结中的第一磁性层的磁性取向来写入登记数据。 用于与登记数据进行比较的输入数据可以通过第二磁性层经由电流线的磁取向相似地设定。 数据检测通过测量电池电阻来执行，这取决于磁性层的相对磁性取向。 由于数据存储，数据输入和数据检测被集成到一个单元中，存储器将较高密度与非易失性相结合。 内存可以支持高速，降低功耗和数据屏蔽。
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公开(公告)号：US08031519B2
公开(公告)日：2011-10-04
申请号：US12485359
申请日：2009-06-16
CPC分类号： H01L27/228 , G11C5/063 , G11C11/1659 , G11C11/1675
摘要： A memory unit with one field line; at least two thermally-assisted switching magnetic tunnel junction-based magnetic random access memory cells, each cell comprising a magnetic tunnel junction having an insulating layer disposed between a magnetic storage layer and a magnetic reference layer; wherein a selection transistor is connected to the magnetic tunnel junction; the one field line is used for passing a field current for switching a magnetization of the storage layer of the magnetic tunnel junctions of the cells. A magnetic memory device can be formed by assembling an array of the memory units, wherein at least two adjacent magnetic tunnel junctions of the cells can be addressed simultaneously by the field line. The memory unit and magnetic memory device have a reduced surface area. Magnetic memory devices with an increased density of memory units can be fabricated resulting in lower die fabrication cost and lower power consumption.
摘要翻译： 具有一个场线的存储单元; 至少两个热辅助切换磁隧道结磁性随机存取存储器单元，每个单元包括具有设置在磁存储层和磁参考层之间的绝缘层的磁性隧道结; 其中选择晶体管连接到所述磁性隧道结; 一个场线用于通过用于切换单元的磁隧道结的存储层的磁化的场电流。 可以通过组装存储器单元的阵列来形成磁存储器件，其中可以通过场线同时寻址单元的至少两个相邻磁隧道结。 存储单元和磁存储器件具有减小的表面积。 可以制造具有增加的存储器单元密度的磁存储器件，从而导致较低的管芯制造成本和较低的功率消耗。
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9.发明申请公开(公告)号：US20090290413A1
公开(公告)日：2009-11-26
申请号：US12467171
申请日：2009-05-15
IPC分类号： G11C11/14 , G11C11/416
CPC分类号： G11C11/155 , G11C11/161 , G11C11/1675
摘要： A magnetic tunnel junction (MTJ)-based magnetic random access memory (MRAM) cell with a thermally assisted switching (TAS) writing procedure and methods for manufacturing and using same. The TAS MTJ-based MRAM cell includes a magnetic tunnel junction that is formed with an anisotropic shape and that comprises a ferromagnetic storage layer, a reference layer, and an intermediate insulating layer. The ferromagnetic storage layer has a magnetization that is adjustable above a high temperature threshold; whereas, the reference layer has a fixed magnetization. The ferromagnetic storage layer is provided with a magnetocrystalline anisotropy that is oriented essentially perpendicular to a long axis of the anisotropic shape of the magnetic tunnel junction. The TAS MTJ-based MRAM cell advantageously limits the effects of dispersion in the magnetic tunnel junction shape anisotropy coming from the fabrication process and features a lower power consumption when compared with conventional MTJ-based MRAM and TAS MTJ-based MRAM cells.
摘要翻译： 具有热辅助切换（TAS）写入程序的磁性隧道结（MTJ）磁性随机存取存储器（MRAM）单元及其制造和使用方法。 基于TAS MTJ的MRAM单元包括形成为各向异性形状并且包括铁磁存储层，参考层和中间绝缘层的磁性隧道结。 铁磁存储层具有高于高温阈值可调的磁化; 而参考层具有固定的磁化强度。 铁磁存储层具有基本上垂直于磁性隧道结的各向异性形状的长轴取向的磁晶各向异性。 基于TAS MTJ的MRAM单元有利地限制了来自制造工艺的磁隧道结形状各向异性中的色散的影响，并且与传统的基于MTJ的MRAM和TAS MTJ型MRAM单元相比具有较低的功耗。
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10.发明申请System and Method for Providing Content-Addressable Magnetoresistive Random Access Memory Cells 有权提供内容寻址磁阻随机存取存储单元的系统和方法公开(公告)号：US20090213632A1
公开(公告)日：2009-08-27
申请号：US12422752
申请日：2009-04-13
IPC分类号： G11C15/02 , G11C11/416 , G11C11/14
CPC分类号： G11C15/046 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C15/02
摘要： A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.
摘要翻译： 一种具有磁性隧道结的存储单元的内容寻址随机存取存储器及其制造和使用方法。 磁隧道结具有第一和第二磁性层，并且可以用作数据存储和数据感测。 在每个单元内，通过在一个或多个电流线路中经由电流脉冲设置磁性隧道结中的第一磁性层的磁性取向来写入登记数据。 用于与登记数据进行比较的输入数据可以通过第二磁性层经由电流线的磁取向相似地设定。 数据检测通过测量电池电阻来执行，这取决于磁性层的相对磁性取向。 由于数据存储，数据输入和数据检测被集成到一个单元中，存储器将较高密度与非易失性相结合。 内存可以支持高速，降低功耗和数据屏蔽。
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