专利检索 aee:"L'Air Liquide, SociétéAnonyme pour l'Exploitation et l'Etude des Procédés Georges Claude" 第 1 页

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发明授权
Etching reactants and plasma-free etching processes using the same 有权

公开(公告)号：US10648087B2

公开(公告)日：2020-05-12

申请号：US15774892

申请日：2016-09-01

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , Clément Lansalot-Matras , Jooho Lee , Jean-Marc Girard , Nicolas Blasco , Satoko Gatineau

发明人： Clément Lansalot-Matras , Jooho Lee , Jean-Marc Girard , Nicolas Blasco , Satoko Gatineau

IPC分类号： C23F1/12 , H01L21/311 , H01L21/3213 , H01L21/67 , C23C8/80 , H01L21/02 , B08B9/08

摘要： Disclosed are processes of removing layers from substrates using fluorinated reactants having the formula MFx(adduct)n, wherein x ranges from 2 to 6 inclusive; n ranges from 0 to 5 inclusive; M is selected from the group consisting of P, Ti, Zr, Hf, V, Nb, Ta, Mo, and W; and the adduct is a neutral organic molecule selected from THF, dimethylether, diethylether, glyme, diglyme, triglyme, polyglyme, dimethylsulphide, diethylsulphide, or methylcyanide. The fluorinated reactants dry etch the nitride layers without utilizing any plasma.