公开(公告)号：US08197721B2

公开(公告)日：2012-06-12

申请号：US12374642

申请日：2009-01-21

申请人： Christopher Stuart ,  Ivan Paul Parkin

发明人： Christopher Stuart ,  Ivan Paul Parkin

IPC分类号： H01B1/02 ,  G02F1/01 ,  B05D5/12 ,  C23C16/00

CPC分类号： C23C16/405 ,  C03C17/245 ,  C03C2217/218 ,  C03C2217/24 ,  C03C2218/152 ,  C23C16/453

摘要： The invention provides improved conditions for atmospheric pressure chemical vapor deposition (APCVD) of vanadium (IV) oxide. Specifically, higher quality vanadium oxide (particularly in the form of films) can be obtained by employing concentrations of precursors in the APCVD reaction which are substantially less than those used previously. These conditions improve the reproducibility of the films obtained by APCVD and also prevent particulate formation in the manufacturing apparatus, which in previous work had caused blockages. The films obtained have improved visual appearance, especially color, and/or have improved adhesion to a substrate. The obtained films also show a greater difference in transmission above and below the switching temperature than previous films. The invention also provides doped vanadium oxide, particularly with tungsten. Substrates (e.g. glass substrates) coated with a film of vanadium oxide are also provided. The vanadium oxide of the invention is useful for intelligent window systems, infrared modulators and data storage devices.

摘要翻译： 本发明提供了氧化钒（IV）的大气压化学气相沉积（APCVD）的改进条件。 具体地说，通过使用APCVD反应中的前体浓度，可以获得更高质量的氧化钒（特别是膜的形式），这些浓度远远小于先前使用的前体。 这些条件提高了通过APCVD获得的膜的再现性，并且还防止了制造装置中的颗粒形成，其在以前的工作中已经造成堵塞。 所获得的膜具有改善的视觉外观，特别是颜色，和/或具有改善的对基材的粘合性。 所获得的膜也显示出比以前的膜更高的和低于开关温度的传输差异。 本发明还提供掺杂的氧化钒，特别是钨。 还提供了涂覆有氧化钒膜的基板（例如玻璃基板）。 本发明的氧化钒可用于智能窗系统，红外调制器和数据存储设备。