公开(公告)号：US20110312125A1

公开(公告)日：2011-12-22

申请号：US13220251

申请日：2011-08-29

申请人： Akhiro Nomoto

发明人： Akhiro Nomoto

IPC分类号： H01L51/40

CPC分类号： H01L51/0013 ,  H01L51/0014 ,  H01L51/0026 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545

摘要： A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括以下步骤：（1）将包含有机半导体材料的溶液涂覆在防水印模基板的拒水表面上; （2）将这样涂布的含有机半导体材料的溶液干燥在防水表面上，使有机半导体材料与防水表面接触，从而形成半导体层; （3）对形成在印模基板上的半导体层进行热处理; 和（4）将形成有热处理的有机半导体层的一侧的印模基板压在要转印的基板的表面上，使得有机半导体层被转印到待转印的基板的表面上。

公开(公告)号：US20070184585A1

公开(公告)日：2007-08-09

申请号：US11620527

申请日：2007-01-05

申请人： Akhiro Nomoto

发明人： Akhiro Nomoto

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L51/0013 ,  H01L51/0014 ,  H01L51/0026 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545

摘要： A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括以下步骤：（1）将包含有机半导体材料的溶液涂覆在防水印模基板的拒水表面上; （2）将这样涂布的含有机半导体材料的溶液干燥在防水表面上，使有机半导体材料与防水表面接触，从而形成半导体层; （3）对形成在印模基板上的半导体层进行热处理; 和（4）将形成有热处理的有机半导体层的一侧的印模基板压在要转印的基板的表面上，使得有机半导体层被转印到待转印的基板的表面上。

公开(公告)号：US08017431B2

公开(公告)日：2011-09-13

申请号：US11620527

申请日：2007-01-05

申请人： Akhiro Nomoto

发明人： Akhiro Nomoto

IPC分类号： H01L51/30

CPC分类号： H01L51/0013 ,  H01L51/0014 ,  H01L51/0026 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545

摘要： A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括以下步骤：（1）将包含有机半导体材料的溶液涂覆在防水印模基板的拒水表面上; （2）将这样涂布的含有机半导体材料的溶液干燥在防水表面上，使有机半导体材料与防水表面接触，从而形成半导体层; （3）对形成在印模基板上的半导体层进行热处理; 和（4）将形成有热处理的有机半导体层的一侧的印模基板压在要转印的基板的表面上，使得有机半导体层被转印到待转印的基板的表面上。

公开(公告)号：US07985694B2

公开(公告)日：2011-07-26

申请号：US12101532

申请日：2008-04-11

申请人： Akhiro Nomoto ,  Kazumasa Nomoto ,  Toshio Fukuda

发明人： Akhiro Nomoto ,  Kazumasa Nomoto ,  Toshio Fukuda

IPC分类号： H01L21/31

CPC分类号： H01L51/0022 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L51/0545 ,  H01L51/102 ,  H05K3/046 ,  H05K3/207 ,  H05K2203/0108 ,  H05K2203/0528 ,  H05K2203/122

摘要： A method for forming a pattern includes the step of forming an electrically conductive film by applying a liquid composition onto a first plate. The liquid composition includes an organic solvent and conductive particles surface-modified with a fatty acid or an aliphatic amine. Then, a second pattern, which is a reverse pattern of a first pattern, is formed on the first plate by pressing a second plate having a concave-convex pattern on a surface thereof on a surface of the first plate having the electrically conductive film on the surface thereof. Then, the first pattern of the electrically conductive film is transferred onto convex top faces of the second plate. Then, the second pattern is transferred onto a surface of a transfer substrate by pressing the surface of the first plate having the second pattern thereon on the surface of the transfer substrate.

摘要翻译： 形成图案的方法包括通过将液体组合物施加到第一板上而形成导电膜的步骤。 液体组合物包括有机溶剂和用脂肪酸或脂肪族胺表面改性的导电颗粒。 然后，通过在具有导电膜的第一板的表面上的表面上压制具有凹凸图案的第二板，在第一板上形成作为第一图案的相反图案的第二图案 其表面。 然后，将导电膜的第一图案转印到第二板的凸顶面上。 然后，通过在转印基板的表面上按压具有第二图案的第一板的表面，将第二图案转印到转印基板的表面上。