公开(公告)号：US06579430B2

公开(公告)日：2003-06-17

申请号：US10012081

申请日：2001-11-02

申请人： Greg Davis ,  Alex Moffatt ,  D. Morgan Tench ,  John T. White

发明人： Greg Davis ,  Alex Moffatt ,  D. Morgan Tench ,  John T. White

IPC分类号： C25B900

CPC分类号： C25D17/06 ,  H01L21/2885

摘要： A cathode assembly for semiconductor wafer plating employs a polymer coating on a metal structural ring to provide a low-profile seal to the perimeter of the wafer surface to be plated. The polymer coating also electrically insulates the metal so that it can be used in contact with the plating solution and still be part of the electrical contact system, eliminating the need for a protective plastic housing. This invention permits the dimensions of the cathode assembly to be minimized. A compact cathode assembly with minimum protrusion above the wafer plated surface enables modifications to the plating cell and agitation system providing more uniform copper deposits across the wafer surface and facilitating automation of the wafer plating process.

摘要翻译： 用于半导体晶片电镀的阴极组件使用在金属结构环上的聚合物涂层来提供要被电镀的晶片表面的周边的低轮廓密封。 聚合物涂层还使金属电绝缘，使得其可以与电镀液接触并且仍然是电接触系统的一部分，从而不需要保护性塑料外壳。 本发明允许阴极组件的尺寸最小化。 具有在晶片镀覆表面上方具有最小突起的紧凑型阴极组件能够修改电镀槽和搅拌系统，从而在晶片表面上提供更均匀的铜沉积物，并且有助于晶圆电镀工艺的自动化。