公开(公告)号：US20230334929A1

公开(公告)日：2023-10-19

申请号：US18134820

申请日：2023-04-14

Applicant: James Nicholas Pazzi ,  David Harry Garcia ,  Kyle Wulff ,  Jason F. Harrison ,  Amjad Obeidat ,  Andrey Yazev ,  William Anthony Burrus ,  Yat Choi ,  Guilherme Moreira Talarico ,  Taha Kowsari ,  Yipeng Cao ,  Matt Lee ,  Tyler Sax ,  Fuxin Yu ,  Roshan Umesh Goli ,  Xi Yang ,  Matthew Siyu Mang ,  Karina Sirqueira Silva

Inventor： James Nicholas Pazzi ,  David Harry Garcia ,  Kyle Wulff ,  Jason F. Harrison ,  Amjad Obeidat ,  Andrey Yazev ,  William Anthony Burrus ,  Yat Choi ,  Guilherme Moreira Talarico ,  Taha Kowsari ,  Yipeng Cao ,  Matt Lee ,  Tyler Sax ,  Fuxin Yu ,  Roshan Umesh Goli ,  Xi Yang ,  Matthew Siyu Mang ,  Karina Sirqueira Silva

IPC: G07C9/38 ,  G06Q30/0645 ,  G06Q10/02

CPC classification number: G07C9/38 ,  G06Q30/0645 ,  G06Q10/02 ,  G07C2209/08

Abstract: Systems and methods are provided to generate an access code specific to a user of an online marketplace to use to enter a first accommodation during a first reservation time frame and a second accommodation during a second reservation time frame and to send the access code specific to the user to a computing device at the first accommodation and a computing device at the second accommodation to use to enter the first accommodation during the first reservation time period and the second accommodation during the second reservation time period. The access code is automatically removed from the computing device at the first accommodation and the computing device at the second accommodation at the end of the first reservation time period and at the end of the second reservation time period, respectively.

公开(公告)号：US06242348B1

公开(公告)日：2001-06-05

申请号：US09411566

申请日：1999-10-04

Applicant: Abu-Hena Mostafa Kamal ,  Amjad Obeidat

Inventor： Abu-Hena Mostafa Kamal ,  Amjad Obeidat

IPC: H01L2144

CPC classification number: H01L21/28518 ,  H01L21/26506 ,  H01L21/28052 ,  H01L29/665

Abstract: Process for forming a boron-doped silicon gate layer underlying a cobalt silicide layer that reduces the risk of grooving and agglomeration of cobalt silicide layer, as well as boron penetration into a gate oxide layer. The process includes providing a PMOS transistor structure that includes an N-well on a P-type silicon substrate, a gate oxide layer and a silicon gate layer. Next, a cobalt layer is deposited on the PMOS transistor structure, which is then subjected to a first thermal treatment to form a bilayer CoSi/silicon stack structure. After removing unreacted cobalt, boron dopant (BF2+ or B+) and nitrogen ions (N2+) are implanted into the bilayer CoSi/silicon stack structure. The bilayer CoSi/silicon stack structure, implanted boron and implanted nitrogen are then subjected to second thermal treatment to form a CoSi2 layer on the silicon gate layer and to thermally activate the implanted boron. Also included is a process where a PMOS transistor structure that includes an N-well on a P-type silicon substrate, a gate oxide layer and a silicon gate layer is first provided, followed by the implantation of nitrogen into the silicon gate layer. Next, a cobalt layer is deposited on the PMOS transistor structure, which is then subjected to a first thermal treatment to form a bilayer CoSi/silicon stack structure. After removing unreacted cobalt, boron is implanted into the bilayer CoSi/silicon stack structure. The bilayer CoSi/silicon stack structure and implanted boron and implanted nitrogen are then subjected to second thermal treatment to form a CoSi2 layer and to thermally activate the implanted boron.

Abstract translation: 用于在钴硅化物层下面形成硼掺杂硅栅极层的方法，其降低了硅化钴层的开槽和附聚的风险，以及硼渗入栅极氧化物层。 该工艺包括提供在P型硅衬底，栅极氧化物层和硅栅极层上包括N阱的PMOS晶体管结构。 接下来，在PMOS晶体管结构上沉积钴层，然后对其进行第一热处理以形成双层CoSi /硅堆叠结构。 在去除未反应的钴后，将硼掺杂剂（BF 2 +或B +）和氮离子（N 2 +）注入到双层CoSi /硅堆叠结构中。 然后对双层CoSi /硅堆叠结构，注入的硼和注入的氮进行第二次热处理，以在硅栅极层上形成CoSi 2层，并热激活注入的硼。 还包括首先提供在P型硅衬底，栅极氧化物层和硅栅极层上包括N阱的PMOS晶体管结构，然后将氮注入硅栅极层的工艺。 接下来，在PMOS晶体管结构上沉积钴层，然后对其进行第一热处理以形成双层CoSi /硅堆叠结构。 除去未反应的钴后，将硼注入到双层CoSi /硅堆叠结构中。 然后将双层CoSi /硅堆叠结构和注入的硼和注入的氮进行第二次热处理以形成CoSi 2层并热激活注入的硼。