公开(公告)号：US07649615B2

公开(公告)日：2010-01-19

申请号：US11797351

申请日：2007-05-02

申请人： Andrew Case ,  Gregory D. Cooper ,  Erin Fleet

发明人： Andrew Case ,  Gregory D. Cooper ,  Erin Fleet

IPC分类号： G03B27/32 ,  G03B27/42

CPC分类号： G03F7/70466 ,  G03F7/70283 ,  G03F7/70291

摘要： Advanced techniques for programmable photolithography provide enhanced resolution and can image features smaller than the single shutter intensity profile, i.e., sub-pixel resolution. Patterns are built up by multiple exposures with relative movement of the mask and resist so as to place each shape from the library where it is needed on the resist. Electro-Optic phase shifting material may be applied to the shutter so as to adjust the single shutter intensity profile, or to adjust the interaction of adjacent shutters. An apodizing mask may be used to engineer the wavefronts of the light striking the resist to achieve better resolution.

摘要翻译： 用于可编程光刻技术的高级技术提供了增强的分辨率，并且可以对小于单个快门强度分布（即子像素分辨率）的图像进行成像。 图案通过掩模和抗蚀剂的相对运动的多次曝光来构建，以便将每个形状从库中需要在抗蚀剂上放置。 可以将电光相移材料施加到快门，以便调节单个快门强度分布，或调整相邻百叶窗的相互作用。 可以使用变迹面罩来设计抵达抗蚀剂的光的波前以实现更好的分辨率。

公开(公告)号：US07050155B2

公开(公告)日：2006-05-23

申请号：US10283322

申请日：2002-10-30

申请人： Andrew Case ,  Gregory D. Cooper ,  Erin Fleet

发明人： Andrew Case ,  Gregory D. Cooper ,  Erin Fleet

IPC分类号： G03B27/32 ,  G03B27/42 ,  G03B27/54

CPC分类号： G03F7/70466 ,  G03F7/70283 ,  G03F7/70291

摘要： Advanced techniques for programmable photolithograhy provide enhanced resolution and other aspects of a photolithography system. The pseudo-inverse of a matrix is applied to the results of a calculation to control exposure energies.

摘要翻译： 可编程光刻技术的先进技术提供了光刻系统的增强分辨率和其他方面。 将矩阵的伪反转应用于计算结果以控制曝光能量。

公开(公告)号：US20060098181A1

公开(公告)日：2006-05-11

申请号：US11315136

申请日：2005-12-23

申请人： Andrew Case ,  Gregory Cooper ,  Erin Fleet

发明人： Andrew Case ,  Gregory Cooper ,  Erin Fleet

IPC分类号： G03B27/54

CPC分类号： G03F7/70466 ,  G03F7/70283 ,  G03F7/70291

摘要： Advanced techniques for programmable photolithography provide enhanced resolution and other aspects of a photolithography system. A combination of multiple exposures and movement of a substrate relative to a programmable mask in a photolithographic system accomplishes single shutter exposure overlaps to create features smaller than the single shutter intensity profile, i.e., sub-pixel resolution. Advanced timing adjustment capabilities are used to modulate the light so that no unwanted features are created. Additionally, a library of shapes may be used, one shape on each pixel, with the small features of the shapes created by phase shifting. Patterns are built up by multiple exposures with relative movement of the mask and resist so as to place each shape from the library where it is needed on the resist. Electro-Optic phase shifting material may be applied to the shutter so as to adjust the single shutter intensity profile, or to adjust the interaction of adjacent shutters. An apodizing mask may be used to engineer the wavefronts of the light striking the resist in such a manner to achieve better resolution.

公开(公告)号：US20070258071A1

公开(公告)日：2007-11-08

申请号：US11797351

申请日：2007-05-02

申请人： Andrew Case ,  Gregory Cooper ,  Erin Fleet

发明人： Andrew Case ,  Gregory Cooper ,  Erin Fleet

IPC分类号： G03B27/42 ,  G03F1/00

CPC分类号： G03F7/70466 ,  G03F7/70283 ,  G03F7/70291

摘要： Advanced techniques for programmable photolithography provide enhanced resolution and can image features smaller than the single shutter intensity profile, i.e., sub-pixel resolution. Patterns are built up by multiple exposures with relative movement of the mask and resist so as to place each shape from the library where it is needed on the resist. Electro-Optic phase shifting material may be applied to the shutter so as to adjust the single shutter intensity profile, or to adjust the interaction of adjacent shutters. An apodizing mask may be used to engineer the wavefronts of the light striking the resist to achieve better resolution.

摘要翻译： 用于可编程光刻技术的高级技术提供了增强的分辨率，并且可以对小于单个快门强度分布（即子像素分辨率）的图像进行成像。 图案通过掩模和抗蚀剂的相对运动的多次曝光来构建，以便将每个形状从库中需要在抗蚀剂上放置。 可以将电光相移材料施加到快门，以便调节单个快门强度分布，或调整相邻百叶窗的相互作用。 可以使用变迹面罩来设计抵达抗蚀剂的光的波前以实现更好的分辨率。

公开(公告)号：US06879376B2

公开(公告)日：2005-04-12

申请号：US10298224

申请日：2002-11-18

申请人： Andrew Case ,  Gregory D. Cooper ,  Erin Fleet

发明人： Andrew Case ,  Gregory D. Cooper ,  Erin Fleet

IPC分类号： G03F7/20 ,  G03B27/42 ,  G03B27/32 ,  G03B27/54 ,  G03C5/00

CPC分类号： G03F7/70466 ,  G03F7/70291

摘要： Method and apparatus for exposing photo resists using programmable masks increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths of light, two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.

摘要翻译： 使用可编程掩模曝光光致抗蚀剂的方法和装置增加了成像分辨率，以通过光学平版印刷法在光致抗蚀剂涂覆的硅晶片上提供由非常小的特征构成的全密集的集成电路图案。 通过可编程或常规掩模的重叠曝光创建小特征。 可以使用阻挡对两种不同波长的光的不同波长的光刻胶，可以使用需要两个波长的光以改变溶解度的双色光致抗蚀剂，并且可以一次通过吸收两个光子而改变溶解度的双光子光致抗蚀剂。