摘要:
Advanced techniques for programmable photolithography provide enhanced resolution and can image features smaller than the single shutter intensity profile, i.e., sub-pixel resolution. Patterns are built up by multiple exposures with relative movement of the mask and resist so as to place each shape from the library where it is needed on the resist. Electro-Optic phase shifting material may be applied to the shutter so as to adjust the single shutter intensity profile, or to adjust the interaction of adjacent shutters. An apodizing mask may be used to engineer the wavefronts of the light striking the resist to achieve better resolution.
摘要:
Advanced techniques for programmable photolithograhy provide enhanced resolution and other aspects of a photolithography system. The pseudo-inverse of a matrix is applied to the results of a calculation to control exposure energies.
摘要:
Method and apparatus for exposing photo resists using programmable masks increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths of light, two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.
摘要:
Nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for photolithography.
摘要:
Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.
摘要:
Domain segregation of polymer blends or block copolymers in the presence of thermal conducting high aspect ratio nanocrystals leads to preferential placement of conductive filler either inside one domain, which promote the self-assembly of a thermal and/or electrical conducting pathway composed of high aspect ratio filler. The self-assembly of such thermal and/or electrical conducting pathway effectively enhances the thermal and/or electrical conductivity of the composite with significantly less amount of filler.
摘要:
Domain segregation of polymer blends or block copolymers in the presence of thermal conducting high aspect ratio nanocrystals leads to preferential placement of conductive filler either inside one domain, which promote the self-assembly of a thermal and/or electrical conducting pathway composed of high aspect ratio filler. The self-assembly of such thermal and/or electrical conducting pathway effectively enhances the thermal and/or electrical conductivity of the composite with significantly less amount of filler.
摘要:
The present invention overcomes many of the disadvantages of prior lithographic microfabrication processes while providing further improvements that can significantly enhance the ability to make more complicated semiconductor chips at lower cost. A new type of programmable structure for exposing a wafer allows the lithographic pattern to be changed under electronic control. This provides great flexibility, increasing the throughput and decreasing the cost of chip manufacture and providing numerous other advantages. The programmable structure consists of an array of shutters that can be programmed to either transmit light to the wafer (referred to as its “open” state) or not transmit light to the wafer (referred to as its “closed” state). The programmable structure can comprise or include an array of selective amplifiers. Thus, each selective amplifier is programmed to either amplify light (somewhat analogous to the “open” or “transparent” state of a shutter) or be “non-amplifying” (its “closed” or “opaque” state). In the non-amplifying state, some portion of the incident light is transmitted through the amplifier material. The shutters and selective amplifiers can work in tandem to form a “programmable layer”. A programmable technique is provided for creating a pattern to be imaged onto a wafer that can be implemented as a viable production technique. Thus, the present invention also provides a technique of making integrated circuits. A diffraction limiter can be used to provide certain advantages associated with contact lithography without requiring some of the disadvantages of contact lithography.
摘要:
Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
摘要:
Domain segregation of polymer blends or block copolymers in the presence of thermal conducting high aspect ratio nanocrystals leads to preferential placement of conductive filler either inside one domain, which promote the self-assembly of a thermal and/or electrical conducting pathway composed of high aspect ratio filler. The self-assembly of such thermal and/or electrical conducting pathway effectively enhances the thermal and/or electrical conductivity of the composite with significantly less amount of filler.