公开(公告)号：US20060039216A1

公开(公告)日：2006-02-23

申请号：US10893809

申请日：2004-07-19

申请人： Neal Berger ,  George Chang ,  Pearl Cheng ,  Anne Koh

发明人： Neal Berger ,  George Chang ,  Pearl Cheng ,  Anne Koh

IPC分类号： G11C7/00

CPC分类号： G11C7/12

摘要： An integrated circuit memory device has an array of memory cells arranged in a plurality of rows and columns and a plurality of row lines and a plurality of column lines. Cells arranged in the same row are connected by a common row line, and cells arranged in the same column are connected by a common column line. Each cell in the array is addressed by an address signal which has a plurality of bits. A sense amplifier circuit is connectable to one or more of the plurality of column lines of the array. An address input terminal receives in series the plurality of bits of the address signal. Each of the column lines is connectable to a pre-charge voltage, in response to a read command. A decoder circuit receives the address signal and decodes the address signal as each of the plurality of bits is received and disconnects certain of the column lines to the pre-charge voltage in response to the decoding, and activates the sense amplifier circuit after all of the plurality of bits of the address signal are received.

摘要翻译： 集成电路存储器件具有排列成多个行和列以及多条行线和多条列线的存储单元阵列。 布置在同一行中的单元通过公共行线连接，并且排列在同一列中的单元通过公共列线连接。 阵列中的每个单元由具有多个位的地址信号来寻址。 读出放大器电路可连接到阵列的多个列线中的一个或多个。 地址输入端串联地址信号的多个位。 响应读取命令，每列列线可连接到预充电电压。 解码器电路接收地址信号并且在接收到多个比特中的每一个时对地址信号进行解码，并且响应于解码将某些列线断开到预充电电压，并且在全部 接收地址信号的多个位。

公开(公告)号：US20060039217A1

公开(公告)日：2006-02-23

申请号：US10921754

申请日：2004-08-17

申请人： Neal Berger ,  George Chang ,  Pearl Cheng ,  Anne Koh

发明人： Neal Berger ,  George Chang ,  Pearl Cheng ,  Anne Koh

IPC分类号： G11C7/00

CPC分类号： G11C7/08 ,  G11C7/1027 ,  G11C7/103

摘要： An integrated circuit memory device has a plurality of memory cells arranged in a plurality of arrays. Each array has a plurality of rows, and a plurality of column lines, and a plurality of row lines connecting to the memory cells in each array. The memory cell in an array is addressable by a column line and a row line. A column address decoder receives a column address signal and selects one or more column lines of each array in response. A row address decoder receives a row address signal and selects a row line of each array in response. The memory device also has a plurality (k) of sense amplifiers, with one sense amplifier associated with each array, connectable to one or more column lines of the array and receives a signal therefrom supplied from an addressed memory cell. The memory device further has a register; and a control circuit. The control circuit receives a read command, and a clock signal, and in response to the read command activates a first plurality (j) of the plurality (k) of sense amplifiers (j

摘要翻译： 集成电路存储器件具有以多个阵列排列的多个存储单元。 每个阵列具有多个行，多个列线以及连接到每个阵列中的存储器单元的多条行线。 阵列中的存储单元可由列线和行行寻址。 列地址解码器接收列地址信号并且响应地选择每个阵列的一个或多个列线。 行地址解码器接收行地址信号并且响应地选择每个阵列的行线。 存储器件还具有多个（k）个读出放大器，其中一个读出放大器与每个阵列相关联，可连接到阵列的一个或多个列线，并接收从寻址的存储器单元提供的信号。 存储器件还具有寄存器; 和控制电路。 控制电路接收读取命令，并且时钟信号，并且响应于读取命令，激活多个（k）个读出放大器（k）中的第一个（j）一段足以感测信号的时间段 在与多个（j）个读出放大器中的每一个相关联的连接列线上。 控制电路将信号锁存到寄存器中; 并且去激活所述第一多个（j）读出放大器; 并响应于时钟信号串行输出来自寄存器的信号。