公开(公告)号：US20050175777A1

公开(公告)日：2005-08-11

申请号：US10515685

申请日：2003-05-08

申请人： Eliav Haskal ,  Ivo Camps ,  Paulus Duineveld ,  Anouk Van Graven-Claassen ,  Antonius Van Den Biggelaar

发明人： Eliav Haskal ,  Ivo Camps ,  Paulus Duineveld ,  Anouk Van Graven-Claassen ,  Antonius Van Den Biggelaar

IPC分类号： H05B33/10 ,  H01L27/00 ,  H01L27/32 ,  H01L51/00 ,  H01L51/40 ,  H01L51/50 ,  H05B33/22 ,  B05D1/36 ,  B05D5/00

CPC分类号： H01L27/3246 ,  H01L27/3283 ,  H01L51/0005

摘要： A method of manufacturing a patterned layer (4) on a substrate comprises providing a substrate surface (2) with a dam structure (6) partitioning the substrate surface into a plurality of compartments for containing fluid from which regions of the patterned layer are obtainable, filling, using a west deposition method, compartments with volumes of fluid and then obtaining from the volumes of fluid regions of the patterned layer. In order to obtain a patterned layer which has a relatively large thickness and a good uniformity in thickness, the filling and obtaining is done in several passes, each pass comprising filling a selection of compartments with fluid having a volume larger than the volume of the compartment and obtaining the corresponding regions therefrom, taking care in no selection two compartments which are nearest-neighbor of each other are included.

摘要翻译： 在衬底上制造图案层（4）的方法包括：提供具有将衬底表面分隔成多个隔室的坝结构（6）的衬底表面（2），用于容纳可从中获得图案层的区域的流体， 使用西沉积法填充具有流体体积的隔室，然后从图案化层的流体区域的体积获得。 为了获得厚度相对较大且厚度均匀性好的图案层，填充和获得在几次中进行，每次通过包括用具有大于室的体积的体积的流体填充选择的隔室 并且从中获得相应的区域，在不选择两个彼此最邻近的隔间的情况下进行选择。

公开(公告)号：US20050130406A1

公开(公告)日：2005-06-16

申请号：US10499258

申请日：2001-12-06

申请人： Robertus Wolters ,  Anouk Van Graven Claassen

发明人： Robertus Wolters ,  Anouk Van Graven Claassen

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L21/4763 ,  H01L21/44 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides for a method of providing copper metallization on a semiconductor body, including the step of depositing copper in a nitrogen-containing atmosphere so as to form a nitrogen-containing copper seed layer and forming the copper metallization on the seed layer, and also including the step of heating the seed layer so as to release the nitrogen to form part of a barrier layer separating the seed layer from the semiconductor body.

摘要翻译： 本发明提供一种在半导体本体上提供铜金属化的方法，包括在含氮气氛中沉积铜以形成含氮铜籽晶层并在籽晶层上形成铜金属化的步骤，以及 还包括加热种子层以释放氮气以形成将种子层与半导体本体分离的阻挡层的一部分的步骤。