摘要:
Circuitry is presented for use in the pulse-forming lines of compact linear accelerators of charged particles. This presents devices that can provide high-voltage radio-frequency pulses in the range of from a few volts to megavolts for charged particle accelerators. The devices can use as input an external charge voltage and an optical pulse to create output RF pulses with a peak voltage that is increased over the input voltage. The exemplary embodiment presents a circuit of pulse forming lines for compact linear accelerator that includes an opto-switch and RF transmission lines that form a pulse shaper and a ladder-like pulse multiplier unit, with or without an output shaper.
摘要:
A blumlein assembly incorporating a solid-state switch is presented. In the exemplary embodiment, a semiconductor switch is placed between first and second conducting strips, with dielectric material filling in the space between the strips on either side of the switch. A third conductive strip, parallel to the other two strips, is separated from the middle one of the strips by another dielectric layer. Rather than having the switch attach directly to the dielectric material on either side, a holder or carrier structure is used, which may be formed of several pieces or of a monolithic structure. The holder is formed of a material whose dielectric constant is closer to that of the switch than the dielectric material on either side, but whose boundary with the dielectric on either side has at least a portion that extends in a non-orthogonal direction with respect to the conducting strips. The arrangement allows the structure to withstand higher electric field levels without breakdown. The exemplary switch is light activated and the holder structure also includes ferrules on either side of the holder, by which optic fibers can be optically coupled with the switch. The switch extends to either side beyond the conductive strips, so that the ferrules are not placed between these strips to again allow for the use of higher field values.
摘要:
A blumlein assembly incorporating a solid-state switch is presented. In the exemplary embodiment, a semiconductor switch is placed between first and second conducting strips, with dielectric material filling in the space between the strips on either side of the switch. A third conductive strip, parallel to the other two strips, is separated from the middle one of the strips by another dielectric layer. Rather than having the switch attach directly to the dielectric material on either side, a holder or carrier structure is used, which may be formed of several pieces or of a monolithic structure. The holder is formed of a material whose dielectric constant is closer to that of the switch than the dielectric material on either side, but whose boundary with the dielectric on either side has at least a portion that extends in a non-orthogonal direction with respect to the conducting strips. The arrangement allows the structure to withstand higher electric field levels without breakdown. The exemplary switch is light activated and the holder structure also includes ferrules on either side of the holder, by which optic fibers can be optically coupled with the switch. The switch extends to either side beyond the conductive strips, so that the ferrules are not placed between these strips to again allow for the use of higher field values.
摘要:
Circuitry is presented for use in the pulse-forming lines of compact linear accelerators of charged particles. This presents devices that can provide high-voltage radio-frequency pulses in the range of from a few volts to megavolts for charged particle accelerators. The devices can use as input an external charge voltage and an optical pulse to create output RF pulses with a peak voltage that is increased over the input voltage. The exemplary embodiment presents a circuit of pulse forming lines for compact linear accelerator that includes an opto-switch and RF transmission lines that form a pulse shaper and a ladder-like pulse multiplier unit, with or without an output shaper.
摘要:
Techniques are presented for illuminating an optically activated switch. The switch is illuminated from one side with a high reflector on the opposing side. An anti-reflective coating can also be formed on the side from which the illumination is incident. For more uniform illumination, a homogenizer, such as a micro-lens array, can be used. Illumination can be provided from an array of micro-fibers, which can be set back by a few millimeters from the switch.
摘要:
The geometry of blumleins and how a switch is placed within the blumlein structure are considered. The thicker the switch, the higher the voltage it charged to without breaking down. A thicker switch can also provide a larger surface to illuminate. In one set of exemplary embodiments, the switch modules is displaced to the sides of the of the blumlein structures in a “necking” arrangement, where the switch region curves out a distance to the side. A stack of blumleins can then alternate sides, allowing for the switch region to each have a greater thickness. Another set of exemplary embodiments uses a tab structure: the top, middle and bottom conductors are all straight, but the top and middle conductors each include tabs, between which the switch is placed.