公开(公告)号：US07112615B2

公开(公告)日：2006-09-26

申请号：US10624959

申请日：2003-07-22

申请人： Karen K. Gleason ,  Qingguo Wu ,  April Ross

发明人： Karen K. Gleason ,  Qingguo Wu ,  April Ross

IPC分类号： C08J9/26

CPC分类号： C30B5/00 ,  C30B25/105 ,  C30B29/60 ,  Y10S438/96

摘要： Methods and systems are disclosed for fabricating ultra-low dielectric constant porous materials. In one aspect of the invention, a method for making porous low-k films is disclosed. The method uses polymer based porogens as sacrificial templates around which a chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) deposited matrix is formed. Upon pyrolysis, the porogens decompose resulting in a porous ultra-low dielectric material. This method can be used, for example, to produce porous organosilicate glass (OSG) materials, ultra-low dielectric nanoporous materials, porous ceramics, porous scaffolds, and/or porous metals. Various uses and embodiments of the methods and systems of this invention are disclosed.

摘要翻译： 公开了用于制造超低介电常数多孔材料的方法和系统。 在本发明的一个方面，公开了一种制造多孔低k膜的方法。 该方法使用基于聚合物的致孔剂作为牺牲模板，在其周围形成化学气相沉积（CVD）或等离子体增强化学气相沉积（PECVD）沉积基质。 热解后，致孔剂分解，产生多孔超低介电材料。 该方法可用于例如生产多孔有机硅酸盐玻璃（OSG）材料，超低介电纳米多孔材料，多孔陶瓷，多孔支架和/或多孔金属。 公开了本发明的方法和系统的各种用途和实施例。