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    FARBRICATION METHOD
    1.
    发明公开
    FARBRICATION METHOD 审中-公开

    公开(公告)号：US20240107897A1

    公开(公告)日：2024-03-28

    申请号：US17753581

    申请日：2019-09-10

    申请人： Microsoft Technology Licensing, LLC

    发明人： Pavel ASEEV ,  Philippe CAROFF-GAONAC'H ,  Leonardus Petrus KOUWENHOVEN

    IPC分类号： H10N60/01 ,  C30B25/04 ,  C30B29/40 ,  C30B29/60 ,  H10N69/00

    CPC分类号： H10N60/01 ,  C30B25/04 ,  C30B29/40 ,  C30B29/60 ,  H10N69/00

    摘要： A fabrication method comprising: forming a mask of an amorphous material over a crystalline surface of a substrate, the mask having a pattern of openings defining areas of an active region in which one or more components of one or more active devices are to be formed, the mask further defining a non-active region in which no active devices are to be formed; and forming a deposition material through the mask by an epitaxial growth process. The deposition material thus forms in the openings of the active region. The pattern of openings through the mask further comprises one or more reservoirs formed in the non-active region, each of the reservoirs being connected by the pattern of openings in the mask to at least one of the areas in the active region, and the deposition material forming in the reservoirs as part of the epitaxial growth.

    METHOD FOR PRODUCING NANOSTRUCTURES
    3.
    发明申请
    METHOD FOR PRODUCING NANOSTRUCTURES 审中-公开

    公开(公告)号：US20180327929A1

    公开(公告)日：2018-11-15

    申请号：US15579910

    申请日：2016-06-03

    申请人： CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

    发明人： Stéphane VEZIAN ,  Benjamin DAMILANO ,  Julien BRAULT

    IPC分类号： C30B33/02 ,  C30B29/40 ,  C30B29/60 ,  H01L29/22

    CPC分类号： C30B33/02 ,  B82Y40/00 ,  C30B29/06 ,  C30B29/406 ,  C30B29/60 ,  H01L29/22

    摘要： A method for producing at least one type of nanostructures comprises the following steps: partially covering a surface of a single-crystal layer or multilayer structure with a discontinuous mask, forming discrete islets having at least one submicrometric lateral dimension and made of a material having an evaporation temperature above that of the layer or multilayer structure; and heating the layer or multilayer structure under vacuum to a so-called etching temperature, above the evaporation temperature of the layer or multilayer structure but below that of the mask, so as to cause evaporation of the layer or multilayer structure outside of the regions covered by the mask. Structures that may be produced by such a method are also provided.

    Method for fabricating carbon-based composite material
    8.
    发明授权
    Method for fabricating carbon-based composite material 有权

    公开(公告)号：US09994971B2

    公开(公告)日：2018-06-12

    申请号：US15366525

    申请日：2016-12-01

    申请人： Tamkang University

    发明人： I-Nan Lin

    IPC分类号： C30B33/04 ,  C30B29/04 ,  C23C16/26 ,  C30B25/10 ,  C30B29/60 ,  C23C16/511

    CPC分类号： C30B29/04 ,  C23C16/26 ,  C23C16/511 ,  C30B25/105 ,  C30B29/60

    摘要： A method for fabricating a carbon-based composite material includes: bearing a carbon-based composite material layer containing an amorphous carbon matrix and a plurality of equi-axed ultrananocrystalline diamond grains dispersed in the amorphous carbon matrix on a susceptor and applying a plasma treatment on the carbon-based composite material layer in a plasma environment containing a C2 species and a CN species. The susceptor is provided with a negative bias voltage, and is bombarded by the plasma species to be naturally heated to a working temperature less than 500° C. The C2 species and CN species are attracted by the negative bias voltage to the carbon-based composite material layer to make the carbon-based composite material layer generate a phase transformation, so as to facilitate growth of each of the adjacent equi-axed ultrananocrystalline diamond into a nano needle-like diamond grain wrapped by a nano graphite phase.