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    ELECTROCHEMICAL PHOTOVOLTAIC CELLS
    2.
    发明申请
    ELECTROCHEMICAL PHOTOVOLTAIC CELLS 审中-公开
    电化学光电池

    公开(公告)号：US20130092237A1

    公开(公告)日：2013-04-18

    申请号：US13635895

    申请日：2011-03-18

    申请人： Arash Takshi ,  John D.W. Madden ,  John T. Beatty

    发明人： Arash Takshi ,  John D.W. Madden ,  John T. Beatty

    IPC分类号： H01L51/42

    CPC分类号： H01L51/424 ,  B82Y10/00 ,  H01G9/2059 ,  H01L51/0093 ,  H01M8/16 ,  H01M14/005 ,  Y02E10/542 ,  Y02E60/527

    摘要： The invention provides a bio-photovoltaic device, in which a photoelectric center, exemplified by a biological photosynthetic reaction center (RC), is dispersed and mobile in a medium, such as an aqueous solution. The charges generated by the illuminated RC are transferred to electrodes via one or more mediators. In selected embodiments, the difference between the reaction rates of two types of mediator at the electrode surfaces, in conjunction with other charge transfer reaction equilibria, determines the direction of the photocurrent in the device. In an exemplified embodiment, the magnitude of the photocurrent is proportional to the incident light intensity, and the current increases nonlinearly with an increase in the RC concentration in the medium.

    摘要翻译： 本发明提供了一种生物光伏器件，其中由生物光合反应中心（RC）示例的光电中心在诸如水溶液的介质中分散和移动。 由照明的RC产生的电荷通过一个或多个介质转移到电极。 在选择的实施方案中，两种类型的介质在电极表面的反应速率与其它电荷转移反应平衡的反应速率之间的差异决定了器件中光电流的方向。 在示例性实施例中，光电流的大小与入射光强成比例，并且电流随着介质中RC浓度的增加而非线性增加。

    Thin Film Field Effect Transistors Having Schottky Gate-Channel Junctions
    3.
    发明申请
    Thin Film Field Effect Transistors Having Schottky Gate-Channel Junctions 失效
    具有肖特基栅极通道结的薄膜场效应晶体管

    公开(公告)号：US20080258137A1

    公开(公告)日：2008-10-23

    申请号：US11909715

    申请日：2006-03-24

    申请人： Arash Takshi ,  John Madden

    发明人： Arash Takshi ,  John Madden

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0508 ,  H01L29/812

    摘要： An active electronic device has drain and source electrodes that make ohmic conduct with a layer of a semiconductor. The semiconductor layer may be a thin layer of an organic or amorphous semiconductor. The drain and source electrodes are on a first face of the layer of semiconductor at locations that are spaced apart on either side of a channel. The device has a gate electrode on a second face of the layer of semiconductor adjacent to the channel. The gate electrode makes a Schottky contact with the semiconductor to produce a depletion region in the channel. The gate electrode may encapsulate the channel so that the channel is protected from contact with oxygen, water molecules or other materials in the environment. In some embodiments, the device has an additional gate electrode separated from the semiconductor layer by an insulating layer. Such embodiments combine features of OFETs and MESFETs.

    摘要翻译： 有源电子器件具有通过半导体层形成欧姆导体的漏极和源极。 半导体层可以是有机或非晶半导体的薄层。 漏极和源电极位于半导体层的第一面上，在沟道的任一侧间隔开。 器件在与沟道相邻的半导体层的第二面上具有栅电极。 栅电极与半导体形成肖特基接触，以在沟道中产生耗尽区。 栅电极可以封装通道，使得通道被保护以免与氧气，水分子或环境中的其它材料接触。 在一些实施例中，器件具有通过绝缘层与半导体层分离的附加栅电极。 这样的实施例组合OFET和MESFET的特征。

    ELECTROCHEMICAL THREE-DIMENSIONAL PRINTING AND SOLDERING
    5.
    发明申请
    ELECTROCHEMICAL THREE-DIMENSIONAL PRINTING AND SOLDERING 审中-公开

    公开(公告)号：US20190017185A1

    公开(公告)日：2019-01-17

    申请号：US16032901

    申请日：2018-07-11

    申请人： Arash Takshi ,  Sabrina Marie Rosa-Ortiz

    发明人： Arash Takshi ,  Sabrina Marie Rosa-Ortiz

    IPC分类号： C25D1/00 ,  C25D5/02 ,  C25D5/08 ,  C25D7/04 ,  C25D17/12 ,  C25D3/38 ,  B29C64/20 ,  H05K3/24

    摘要： A hydrogen evolution assisted electroplating nozzle includes a nozzle tip configured to interface with a portion of a substructure. The nozzle also includes an inner coaxial tube connected to a reservoir containing an electrolyte and an anode, the inner coaxial tube configured to dispense the electrolyte through the nozzle tip onto the portion of the substructure. The nozzle also includes an outer coaxial tube encompassing the inner coaxial tube, the outer coaxial tube configured to extract the electrolyte from the portion of the substructure. The nozzle also includes at least one contact pin configured to make electrical contact with a conductive track on the substrate.

    Solar cells having internal energy storage capacity
    6.
    发明授权
    Solar cells having internal energy storage capacity 有权

    公开(公告)号：US10069459B1

    公开(公告)日：2018-09-04

    申请号：US14518333

    申请日：2014-10-20

    申请人： Arash Takshi

    发明人： Arash Takshi

    IPC分类号： H02S40/38 ,  H01G9/00 ,  H02J7/35 ,  H01L31/02

    摘要： In one embodiment, a solar cell having internal storage capacity includes a working electrode, a counter electrode, an electrolyte provided between the electrodes, and a composite layer of material applied to an inner side of the working electrode, the layer comprising a photosensitive dye and a conducting polymer, wherein the conducting polymer is capable of storing energy generated within the cell.

    Thin film field effect transistors having Schottky gate-channel junctions
    8.
    发明授权
    Thin film field effect transistors having Schottky gate-channel junctions 失效
    具有肖特基栅极 - 沟道结的薄膜场效应晶体管

    公开(公告)号：US07649217B2

    公开(公告)日：2010-01-19

    申请号：US11909715

    申请日：2006-03-24

    申请人： Arash Takshi ,  John Madden

    发明人： Arash Takshi ,  John Madden

    IPC分类号： H01L29/80

    CPC分类号： H01L51/0508 ,  H01L29/812

    摘要： An active electronic device has drain and source electrodes that make ohmic conduct with a layer of a semiconductor. The semiconductor layer may be a thin layer of an organic or amorphous semiconductor. The drain and source electrodes are on a first face of the layer of semiconductor at locations that are spaced apart on either side of a channel. The device has a gate electrode on a second face of the layer of semiconductor adjacent to the channel. The gate electrode makes a Schottky contact with the semiconductor to produce a depletion region in the channel. The gate electrode may encapsulate the channel so that the channel is protected from contact with oxygen, water molecules or other materials in the environment. In some embodiments, the device has an additional gate electrode separated from the semiconductor layer by an insulating layer. Such embodiments combine features of OFETs and MESFETs.

    摘要翻译： 有源电子器件具有通过半导体层形成欧姆导体的漏极和源极。 半导体层可以是有机或非晶半导体的薄层。 漏极和源电极位于半导体层的第一面上，在沟道的任一侧间隔开。 器件在与沟道相邻的半导体层的第二面上具有栅电极。 栅电极与半导体形成肖特基接触，以在沟道中产生耗尽区。 栅电极可以封装通道，使得通道被保护以免与氧气，水分子或环境中的其它材料接触。 在一些实施例中，器件具有通过绝缘层与半导体层分离的附加栅电极。 这样的实施例组合OFET和MESFET的特征。