公开(公告)号：US08758085B2

公开(公告)日：2014-06-24

申请号：US13178126

申请日：2011-07-07

申请人： Sivakumar Dhandapani ,  Asheesh Jain ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

发明人： Sivakumar Dhandapani ,  Asheesh Jain ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

IPC分类号： B24B49/00 ,  B24B51/00

CPC分类号： B24B53/007 ,  B24B37/005

摘要： Apparatus and methods for conditioning a polishing pad in a CMP system are provided. In one embodiment, a method includes performing a pre-polish process including urging a conditioner disk against a polishing surface of a polishing pad disposed in a polishing station, moving the conditioner disk relative to the polishing pad in a sweep pattern across the polishing surface while monitoring a rotational force value required to move the conditioner disk relative to the polishing pad, determining a metric indicative of an interaction between the conditioner disk and the polishing surface from the rotational force value, adjusting a polishing recipe in response to the metric, and polishing one or more substrates using the adjusted polishing recipe.

摘要翻译： 提供了用于调节CMP系统中抛光垫的装置和方法。 在一个实施例中，一种方法包括执行预抛光过程，包括将调节盘推靠在抛光台上的抛光垫的抛光表面上，以相对抛光垫相对于抛光垫移动校准盘，穿过抛光表面，同时 监测相对于抛光垫移动调节盘所需的旋转力值，从旋转力值确定指示调节盘和抛光表面之间的相互作用的度量，响应于度量调整抛光配方，以及抛光 使用调整后的抛光配方的一个或多个基材。

公开(公告)号：US20120100779A1

公开(公告)日：2012-04-26

申请号：US13178126

申请日：2011-07-07

申请人： Sivakumar Dhandapani ,  Asheesh Jain ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

发明人： Sivakumar Dhandapani ,  Asheesh Jain ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

IPC分类号： B24B49/00

CPC分类号： B24B53/007 ,  B24B37/005

摘要： Apparatus and methods for conditioning a polishing pad in a CMP system are provided. In one embodiment, a method includes performing a pre-polish process including urging a conditioner disk against a polishing surface of a polishing pad disposed in a polishing station, moving the conditioner disk relative to the polishing pad in a sweep pattern across the polishing surface while monitoring a rotational force value required to move the conditioner disk relative to the polishing pad, determining a metric indicative of an interaction between the conditioner disk and the polishing surface from the rotational force value, adjusting a polishing recipe in response to the metric, and polishing one or more substrates using the adjusted polishing recipe.

摘要翻译： 提供了用于调节CMP系统中抛光垫的装置和方法。 在一个实施例中，一种方法包括执行预抛光过程，包括将调节盘推靠在抛光台上的抛光垫的抛光表面上，以相对抛光垫相对于抛光垫移动校准盘，穿过抛光表面，同时 监测相对于抛光垫移动调节盘所需的旋转力值，从旋转力值确定指示调节盘和抛光表面之间的相互作用的度量，响应于度量调整抛光配方，以及抛光 使用调整后的抛光配方的一个或多个基材。