公开(公告)号：US08467896B2

公开(公告)日：2013-06-18

申请号：US13480434

申请日：2012-05-24

申请人： Jun Qian ,  Charles C. Garretson ,  Sivakumar Dhandapani ,  Jeffrey Drue David ,  Harry Q. Lee

发明人： Jun Qian ,  Charles C. Garretson ,  Sivakumar Dhandapani ,  Jeffrey Drue David ,  Harry Q. Lee

IPC分类号： G06F19/00 ,  B24B49/04 ,  B24B49/12

CPC分类号： B24B49/04 ,  B24B49/12

摘要： A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.

摘要翻译： 研磨具有多个区域的基板并测量光谱。 对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。 基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引 预计时间比没有这样的调整。 基于对先前基板计算的反馈误差来计算调整。 基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。

公开(公告)号：US20110256812A1

公开(公告)日：2011-10-20

申请号：US13087180

申请日：2011-04-14

申请人： Sivakumar Dhandapani ,  Jun Qian ,  Christopher D. Cocca ,  Jason G. Fung ,  Shou-Sung Chang ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

发明人： Sivakumar Dhandapani ,  Jun Qian ,  Christopher D. Cocca ,  Jason G. Fung ,  Shou-Sung Chang ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

IPC分类号： B24B53/02

CPC分类号： B24B53/017 ,  B24B37/042

摘要： Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.

摘要翻译： 本文描述的实施例使用调节扫描的闭环控制（CLC），以在整个衬垫寿命期间跨越焊盘实现均匀的凹槽深度去除。 集成到调节臂中的传感器使得可以在现场和实时监测焊盘堆叠厚度。 来自厚度传感器的反馈用于修改焊盘表面上的焊盘调节器停留时间，从而校正焊盘轮廓上随焊盘和磁盘寿命可能出现的漂移。 焊盘轮廓CLC可以通过持续的调节来均匀地减小槽深度，提供更长的消耗品寿命和降低的操作成本。

公开(公告)号：US20090318060A1

公开(公告)日：2009-12-24

申请号：US12489132

申请日：2009-06-22

申请人： Sivakumar Dhandapani ,  Stan D. Tsai ,  Daxin Mao ,  Sameer Deshpande ,  Shou-Sung Chang ,  Gregory E. Menk ,  Charles C. Garretson ,  Jason Garcheung Fung ,  Christopher D. Cocca ,  Hung Chih Chen

发明人： Sivakumar Dhandapani ,  Stan D. Tsai ,  Daxin Mao ,  Sameer Deshpande ,  Shou-Sung Chang ,  Gregory E. Menk ,  Charles C. Garretson ,  Jason Garcheung Fung ,  Christopher D. Cocca ,  Hung Chih Chen

IPC分类号： B24B51/00 ,  B24B53/02

CPC分类号： B24B49/18 ,  B24B37/005 ,  B24B37/042

摘要： A method and apparatus for conditioning a polishing pad is provided. The conditioning element is held by a conditioning arm rotatably mounted to a base at a pivot point. An actuator pivots the arm about the pivot point. The conditioning element is urged against the surface of the polishing pad, and translated with respect to the polishing pad to remove material from the polishing pad and roughen its surface. The interaction of the abrasive conditioning surface with the polishing pad surface generates a frictional force. The frictional force may be monitored by monitoring the torque applied to the pivot point, and material removal controlled thereby. The conditioning time, down force, translation rate, or rotation of the conditioning pad may be adjusted based on the measured torque.

摘要翻译： 提供了一种用于调理抛光垫的方法和装置。 调节元件由可旋转地安装到枢轴点处的基座的调节臂保持。 执行器绕枢轴点枢转臂。 调理元件被推靠在抛光垫的表面上，并相对于抛光垫平移以从抛光垫移除材料并使其表面变粗糙。 研磨调理表面与抛光垫表面的相互作用产生摩擦力。 可以通过监视施加到枢转点的扭矩来监测摩擦力，并且由此控制材料移除。 调节垫的调节时间，下压力，平移速率或旋转可以基于测量的扭矩来调节。

公开(公告)号：US20130122783A1

公开(公告)日：2013-05-16

申请号：US13129351

申请日：2011-04-13

申请人： Gregory E. Menk ,  Stan D. Tsai ,  Sang J. Cho ,  Slvakumar Dhandapani ,  Christopher D. Cocca ,  Jason G. Fung ,  Shou-Sung Chang ,  Charles C. Garretson

发明人： Gregory E. Menk ,  Stan D. Tsai ,  Sang J. Cho ,  Slvakumar Dhandapani ,  Christopher D. Cocca ,  Jason G. Fung ,  Shou-Sung Chang ,  Charles C. Garretson

IPC分类号： B24B53/017

CPC分类号： B24B53/017 ,  B24B37/042

摘要： A method and apparatus for conditioning a polishing pad in a CMP system is provided. In one embodiment, a method for conditioning a polishing pad includes applying a down force to the conditioning disk that urges the conditioning disk against the polishing pad, measuring a torque required to sweep the conditioning disk across the polishing pad, determining a change in down force by comparing the measured torque to a model force profile (MFP), and adjusting the down force that the conditioning disk applies against the polishing pad in response to the determined change.

摘要翻译： 提供了一种用于调节CMP系统中的抛光垫的方法和装置。 在一个实施例中，一种用于调节抛光垫的方法包括向调节盘施加向下的力，该调节盘将调节盘推向抛光垫，测量扫过经过抛光垫的调节盘所需的扭矩，确定向下力的变化 通过将测量的扭矩与模型力分布（MFP）进行比较，并且响应于确定的变化来调节调节盘对抛光垫施加的向下的力。

公开(公告)号：US08337279B2

公开(公告)日：2012-12-25

申请号：US12489132

申请日：2009-06-22

申请人： Sivakumar Dhandapani ,  Stan D. Tsai ,  Daxin Mao ,  Sameer Deshpande ,  Shou-Sung Chang ,  Gregory E. Menk ,  Charles C. Garretson ,  Jason Garcheung Fung ,  Christopher D. Cocca ,  Hung Chih Chen

发明人： Sivakumar Dhandapani ,  Stan D. Tsai ,  Daxin Mao ,  Sameer Deshpande ,  Shou-Sung Chang ,  Gregory E. Menk ,  Charles C. Garretson ,  Jason Garcheung Fung ,  Christopher D. Cocca ,  Hung Chih Chen

IPC分类号： B24B1/00 ,  B24B49/00 ,  B24B51/00

CPC分类号： B24B49/18 ,  B24B37/005 ,  B24B37/042

摘要： A method and apparatus for conditioning a polishing pad is provided. The conditioning element is held by a conditioning arm rotatably mounted to a base at a pivot point. An actuator pivots the arm about the pivot point. The conditioning element is urged against the surface of the polishing pad, and translated with respect to the polishing pad to remove material from the polishing pad and roughen its surface. The interaction of the abrasive conditioning surface with the polishing pad surface generates a frictional force. The frictional force may be monitored by monitoring the torque applied to the pivot point, and material removal controlled thereby. The conditioning time, down force, translation rate, or rotation of the conditioning pad may be adjusted based on the measured torque.

摘要翻译： 提供了一种用于调理抛光垫的方法和装置。 调节元件由可旋转地安装到枢轴点处的基座的调节臂保持。 执行器绕枢轴点枢转臂。 调理元件被推靠在抛光垫的表面上，并相对于抛光垫平移以从抛光垫移除材料并使其表面变粗糙。 研磨调理表面与抛光垫表面的相互作用产生摩擦力。 可以通过监视施加到枢转点的扭矩来监测摩擦力，并且由此控制材料移除。 调节垫的调节时间，下压力，平移速率或旋转可以基于测量的扭矩来调节。

公开(公告)号：US20120231701A1

公开(公告)日：2012-09-13

申请号：US13480434

申请日：2012-05-24

申请人： Jun Qian ,  Charles C. Garretson ,  Sivakumar Dhandapani ,  Jeffrey Drue David ,  Harry Q. Lee

发明人： Jun Qian ,  Charles C. Garretson ,  Sivakumar Dhandapani ,  Jeffrey Drue David ,  Harry Q. Lee

IPC分类号： B24B51/00

CPC分类号： B24B49/04 ,  B24B49/12

摘要： A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.

摘要翻译： 研磨具有多个区域的基板并测量光谱。 对于每个区域，第一个线性函数拟合与参考光谱相关联的索引值序列，该参考光谱与测量的光谱最匹配。 基于第一线性函数确定参考区域将达到目标指标值的预计时间，并且对于至少一个可调整区域，计算抛光参数调整，使得可调节区域更接近目标索引处的目标索引 预计时间比没有这样的调整。 基于对先前基板计算的反馈误差来计算调整。 基于适合与调整抛光参数之后测量的最佳匹配光谱的参考光谱相关联的索引值序列的第二线性函数来计算后续衬底的反馈误差。

公开(公告)号：US20080196833A1

公开(公告)日：2008-08-21

申请号：US12049650

申请日：2008-03-17

申请人： Hung Chih Chen ,  Steven M. Zuniga ,  Charles C. Garretson ,  Douglas R. McAllister ,  Jian Lin ,  Stacy Meyer ,  Sidney P. Huey ,  Jeonghoon Oh ,  Trung T. Doan ,  Jeffrey Schmidt ,  Martin S. Wohlert ,  Kerry F. Hughes ,  James C. Wang ,  Danny Cam Toan Lu ,  Romain Beau De Lamenie ,  Venkata R. Balagani ,  Aden Martin Allen ,  Michael Jon Fong

发明人： Hung Chih Chen ,  Steven M. Zuniga ,  Charles C. Garretson ,  Douglas R. McAllister ,  Jian Lin ,  Stacy Meyer ,  Sidney P. Huey ,  Jeonghoon Oh ,  Trung T. Doan ,  Jeffrey Schmidt ,  Martin S. Wohlert ,  Kerry F. Hughes ,  James C. Wang ,  Danny Cam Toan Lu ,  Romain Beau De Lamenie ,  Venkata R. Balagani ,  Aden Martin Allen ,  Michael Jon Fong

IPC分类号： H01L21/306 ,  B24B1/00

CPC分类号： B24B37/32 ,  Y10T29/49815

摘要： A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. The lapping can be performed using a machine that dedicated for use in lapping the bottom surface of retaining rings. During the lapping the ring can be permitted to rotate freely about an axis of the ring. The bottom surface of the retaining ring can have curved or flat portions.

摘要翻译： 保持环可以通过机械加工或研磨环的底部表面而在底面形成成形轮廓。 保持环的底面可以包括平坦的，倾斜的和弯曲的部分。 可以使用专用于研磨保持环底面的机器进行研磨。 在研磨期间，可以允许环围绕环的轴线自由旋转。 保持环的底面可以具有弯曲或平坦的部分。

公开(公告)号：US06913518B2

公开(公告)日：2005-07-05

申请号：US10430912

申请日：2003-05-06

申请人： Hung Chih Chen ,  Steven M. Zuniga ,  Charles C. Garretson ,  Thomas H. Osterheld ,  Sen-Hou Ko ,  Mohsen Salek

发明人： Hung Chih Chen ,  Steven M. Zuniga ,  Charles C. Garretson ,  Thomas H. Osterheld ,  Sen-Hou Ko ,  Mohsen Salek

IPC分类号： B24B37/16 ,  B24B41/047 ,  B24B7/22

CPC分类号： B24B37/16

摘要： A platen for chemical mechanical polishing of a substrate includes a surface upon which a polishing pad can be placed, a support structure, and a controller. The surface has a first region and a second region and is operable to exert force against the polishing pad during polishing. The support structure is located beneath the second region and is operable to cause the second region to exert more force than the first region. The controller is operable to adjust the amount of force that is exerted by the second region.

公开(公告)号：US06855031B2

公开(公告)日：2005-02-15

申请号：US10360558

申请日：2003-02-07

申请人： Boris Fuksshimov ,  Jeff P Rudd ,  Charles C Garretson ,  Brian J Brown

发明人： Boris Fuksshimov ,  Jeff P Rudd ,  Charles C Garretson ,  Brian J Brown

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B57/02 ,  B24B51/00

CPC分类号： B24B37/04 ,  B24B49/00 ,  B24B57/02 ,  Y10T137/0379

摘要： In a first aspect of the invention, a polishing device is provided. The polishing device includes a platen adapted to support a polishing pad and also includes a source of polishing slurry. Also included in the polishing device is a slurry supply line adapted to supply the polishing slurry from the source of polishing slurry to the polishing pad. The polishing device includes a pressure transducer installed along the slurry supply line and adapted to detect a pressure inside the slurry supply line. Numerous other aspects are provided.

摘要翻译： 在本发明的第一方面中，提供了一种抛光装置。 抛光装置包括适于支撑抛光垫的压板，并且还包括抛光浆料源。 还包括在抛光装置中的是用于将抛光浆料从抛光浆料源提供给抛光垫的浆料供应管线。 抛光装置包括沿着浆料供应管线安装并适于检测浆料供应管线内的压力的压力传感器。 提供了许多其他方面。

公开(公告)号：US09138860B2

公开(公告)日：2015-09-22

申请号：US13087180

申请日：2011-04-14

申请人： Sivakumar Dhandapani ,  Jun Qian ,  Christopher D. Cocca ,  Jason G. Fung ,  Shou-Sung Chang ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

发明人： Sivakumar Dhandapani ,  Jun Qian ,  Christopher D. Cocca ,  Jason G. Fung ,  Shou-Sung Chang ,  Charles C. Garretson ,  Gregory E. Menk ,  Stan D. Tsai

IPC分类号： B24B53/02 ,  B24B53/017 ,  B24B37/04

CPC分类号： B24B53/017 ,  B24B37/042

摘要： Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.

摘要翻译： 本文描述的实施例使用调节扫描的闭环控制（CLC），以在整个衬垫寿命期间跨越焊盘实现均匀的凹槽深度去除。 集成到调节臂中的传感器使得可以在现场和实时监测焊盘堆叠厚度。 来自厚度传感器的反馈用于修改焊盘表面上的焊盘调节器停留时间，从而校正焊盘轮廓上随焊盘和磁盘寿命可能出现的漂移。 焊盘轮廓CLC可以通过持续的调节来均匀地减小槽深度，提供更长的消耗品寿命和降低的操作成本。