-
公开(公告)号:US5990453A
公开(公告)日:1999-11-23
申请号:US982683
申请日:1997-12-02
申请人: Ashok K. Das , Joe Stevens , Erich Tzou , Matt Tsai
发明人: Ashok K. Das , Joe Stevens , Erich Tzou , Matt Tsai
CPC分类号: H01L21/67109
摘要: An improved processing chamber is provided that withstands numerous high pressure/high temperature processing cycles without heater breakage. The processing chamber contains a high conductivity, a high emissivity and/or a high transmissivity shield positioned in sufficient proximity to a heater to prohibit gas currents such as convection current loops from forming between the shield and the heater. The shield is preferably a thin anodized metal or a sapphire sheet.
摘要翻译: 提供了一种改进的处理室,其承受许多高压/高温处理循环而没有加热器断裂。 处理室包含高导电率,高发射率和/或高透射率屏蔽,其位于足够靠近加热器的位置,以防止诸如对流电流环之间的气流在屏蔽和加热器之间形成。 该屏蔽件优选为薄的阳极氧化金属或蓝宝石片。
-
公开(公告)号:US06589407B1
公开(公告)日:2003-07-08
申请号:US08862537
申请日:1997-05-23
IPC分类号: C23C1434
CPC分类号: H01J37/32623 , H01J37/3441
摘要: An aluminum deposition shield substantially improves transfer of radiated heat from within the vacuum chamber, in comparison to a stainless steel deposition shield. The aluminum deposition shield remains cooler during wafer processing and assists in cooling the chamber components.
摘要翻译: 与不锈钢沉积屏蔽相比,铝沉积屏蔽件显着地改善了来自真空室内的辐射热传递。 铝沉积屏蔽在晶片加工过程中保持冷却,有助于冷却腔室部件。
-