High pressure/high temperature process chamber
    1.
    发明授权
    High pressure/high temperature process chamber 失效
    高压/高温处理室

    公开(公告)号:US5990453A

    公开(公告)日:1999-11-23

    申请号:US982683

    申请日:1997-12-02

    IPC分类号: H01L21/00 A21B1/00

    CPC分类号: H01L21/67109

    摘要: An improved processing chamber is provided that withstands numerous high pressure/high temperature processing cycles without heater breakage. The processing chamber contains a high conductivity, a high emissivity and/or a high transmissivity shield positioned in sufficient proximity to a heater to prohibit gas currents such as convection current loops from forming between the shield and the heater. The shield is preferably a thin anodized metal or a sapphire sheet.

    摘要翻译: 提供了一种改进的处理室,其承受许多高压/高温处理循环而没有加热器断裂。 处理室包含高导电率,高发射率和/或高透射率屏蔽,其位于足够靠近加热器的位置,以防止诸如对流电流环之间的气流在屏蔽和加热器之间形成。 该屏蔽件优选为薄的阳极氧化金属或蓝宝石片。