公开(公告)号：US06486714B2

公开(公告)日：2002-11-26

申请号：US10059276

申请日：2002-01-31

申请人： Atsuya Ushida ,  Kenji Ikeda ,  Takaaki Saito

发明人： Atsuya Ushida ,  Kenji Ikeda ,  Takaaki Saito

IPC分类号： H05B3702

CPC分类号： H02M1/38 ,  H02M1/36 ,  H02M7/538 ,  H05B41/2828 ,  H05B41/2855

摘要： In a drive circuit of a half-bridge inverter circuit, a stable operation cannot be performed at a start-up time and a problem exists such that if a high side output signal is first outputted, main switching elements and are simultaneously turned on. In the present invention, a start-up circuit comprising a latch circuit and a gate circuit are provided, the latch circuit is set while prioritizing a low-side signal, and a low-side output signal is always first made high level, thereby realizing a half-bridge inverter circuit which can start up wit a stability.

摘要翻译： 在半桥逆变器电路的驱动电路中，在启动时不能进行稳定的动作，存在如下问题：如果首先输出高侧输出信号，则主开关元件同时导通。 在本发明中，提供了包括锁存电路和门电路的启动电路，在对低端信号进行优先排列的同时设定锁存电路，并且始终将低端输出信号设为高电平，从而实现 半桥逆变电路，可稳定启动。

公开(公告)号：US20070007588A1

公开(公告)日：2007-01-11

申请号：US11471733

申请日：2006-06-21

申请人： Hiroyasu Ishida ,  Tadao Mandai ,  Atsuya Ushida ,  Hiroaki Saito

发明人： Hiroyasu Ishida ,  Tadao Mandai ,  Atsuya Ushida ,  Hiroaki Saito

IPC分类号： H01L29/94 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/66734

摘要： A first electrode layer, which comes into contact with a source region, and a second electrode layer, which comes into contact with a body (back gate) region, are provided. The first and second electrode layers are insulated from each other and are extended in a direction different from an extending direction of a trench. It is possible to individually apply potentials to the first and second electrode layers, and to perform control for preventing a reverse current caused by a parasitic diode. Therefore, a bidirectional switching element can be realized by use of one MOSFET.

摘要翻译： 设置与源极区域接触的第一电极层和与主体（背栅极）区域接触的第二电极层。 第一和第二电极层彼此绝缘并且沿与沟槽的延伸方向不同的方向延伸。 可以分别对第一和第二电极层施加电位，并且执行用于防止由寄生二极管引起的反向电流的控制。 因此，可以通过使用一个MOSFET来实现双向开关元件。