摘要:
A solar concentrator including a housing having a receiving wall, a reflecting wall and at least two end walls, the receiving, reflecting and end walls defining a three-dimensional volume having an inlet, wherein a vertical axis of the housing is generally perpendicular to the inlet, a receiver mounted on the receiving wall of the housing, the receiver including at least one photovoltaic cell, wherein a vertical axis of the receiver is disposed at a non-zero angle relative to the vertical axis of the housing, at least one clip disposed on the reflecting wall, an optical element received within the three-dimensional volume, the optical element including at least one tab, the tab being engaged by the clip to align the optical element with the receiver, and a window received over the inlet to enclose the housing.
摘要:
The present invention comprises a method and apparatus to increase the efficiency of photovoltaic conversion of light into electrical power and to achieve operation at higher optical power and therefore higher electrical power. Preferred embodiments increase the efficiency of photovoltaic power conversion of any source of a beam of photons by spatially dividing the beams into a plurality of individual beamlets, each beamlet focusing on an active photovoltaic region. The preferred architecture of the apparatus of the invention comprises spatially separated photovoltaic cells to substantially match the pattern of the spatially separated plurality of beamlets. Preferred embodiments result in a significant reduction in ohmic losses and current shunting, thereby increasing photovoltaic conversion efficiencies.
摘要:
The present invention provides a broadband transmitting protective coating (10) including an AlGaP protective layer (14) deposited on an optical substrate (12) and an anti-reflection film (16) deposited on the AlGaP protective layer (14). The coating (10) is suitable for use with typical infrared and broadband optical substrate materials such as germanium or multi-spectral ZnS. In the case of a germanium substrate (12), the anti-reflection film (16), (16a) preferably consists of a single layer of hard carbon or alternating layers of hard carbon and silicon. In the case of a multi-spectral ZnS substrate (12a), the anti-reflection film (16b) preferably consists of layered Al.sub.2 O.sub.3 /TaO.sub.5 /LaF.sub.3 /MgF.sub.2. The protective coating (10) is preferably deposited on the optical substrate (12) by a metal organic chemical vapor deposition process wherein an initial layer of AlP is nucleated on the substrate (12) at a temperature of approximately 400.degree. C. The temperature of the substrate (12) is then raised to approximately 600.degree. C. and a layer of AlGaP (14) is grown on the substrate (12) to a preselected thickness. The AlGaP coated optical substrate (12) is then polished to a desired smoothness. The anti-reflection film (16) is then deposited on the AlGaP layer (14) using an RF chemical vapor deposition process or a thermal evaporation process.
摘要翻译:本发明提供了一种宽带传输保护涂层(10),其包括沉积在AlGaP保护层(14)上的沉积在光学基片(12)上的AlGaP保护层(14)和抗反射膜(16)。 涂层(10)适用于典型的红外和宽带光学基板材料,如锗或多光谱ZnS。 在锗基板(12)的情况下,防反射膜(16),(16a)优选由单层硬碳或硬碳和硅的交替层组成。 在多光谱ZnS衬底(12a)的情况下,抗反射膜(16b)优选由层状Al 2 O 3 / TaO 5 / LaF 3 / MgF 2组成。 保护涂层(10)优选通过金属有机化学气相沉积方法沉积在光学基底(12)上,其中初始的AlP层在基底(12)上在约400℃的温度下成核。 然后将衬底(12)升高至约600℃,并且在衬底(12)上生长一层AlGaP(14)至预定厚度。 然后将AlGaP涂覆的光学基板(12)抛光至所需的平滑度。 然后使用RF化学气相沉积工艺或热蒸发工艺将抗反射膜(16)沉积在AlGaP层(14)上。
摘要:
A doping profile is disclosed for realizing a varactor diode that exhibits a high breakdown voltage V.sub.BR, e.g.,>100 volts, and a capacitance which has a bi-level characteristic. In particular, the capacitance has a C.sub.max level and a C.sub.min level. The doping profile includes two lightly doped regions and, between them, a third region with higher doping. The doping concentrations and widths of the first two regions substantially set the tuning ratio of C.sub.max /C.sub.min, and the doping concentration and width of the third region substantially sets the transition voltage V.sub.TR between the bi-level capacitances.
摘要:
A solar concentrator including a housing having a receiving wall, a reflecting wall and at least two end walls, the receiving, reflecting and end walls defining a three-dimensional volume having an inlet, wherein a vertical axis of the housing is generally perpendicular to the inlet, a receiver mounted on the receiving wall of the housing, the receiver including at least one photovoltaic cell, wherein a vertical axis of the receiver is disposed at a non-zero angle relative to the vertical axis of the housing, at least one clip disposed on the reflecting wall, an optical element received within the three-dimensional volume, the optical element including at least one tab, the tab being engaged by the clip to align the optical element with the receiver, and a window received over the inlet to enclose the housing.
摘要:
A waveguide is fabricated by first preparing two waveguide precursor pieces. Each waveguide precursor piece includes a single-crystal substrate, and an epitaxial coating layer of an oxide coating material on the substrate. The oxide substrate material preferably comprises yttrium as a substrate-material cation, and the oxide coating material preferably comprises a coating-material cation selected from the group consisting of ytterbium, thulium, erbium, and holmium. The two substrates are placed together with the coating layers in contact to form a precursor structure. The precursor structure is heated to an elevated diffusion temperature so that the coating layers bond together and the coating materials and the respective substrate materials interdiffuse to form the waveguide having an interdiffused region. A laser beam may be directed through the interdiffused region, while the interdiffused region is optionally optically pumped through one or both of the substrates.
摘要:
The present invention provides a solar cell comprising a substrate, a first buffer layer disposed above the base layer, a second buffer layer disposed above the first buffer layer, a first boron compound layer disposed above the second buffer layer, a second boron compound layer disposed above the first compound layer, and a window layer disposed above the second compound layer, wherein the first compound layer comprises a first type of doping, wherein the second compound layer comprises a second type of doping, wherein the second buffer layer comprises a higher energy bandgap than the first compound layer, and wherein the first buffer layer and the second buffer layer permit a boron content in the first compound layer and the second compound layer to be greater than 3 %.