公开(公告)号：US4866308A

公开(公告)日：1989-09-12

申请号：US179699

申请日：1988-04-11

申请人： Delbert R. Cecchi ,  Hyung S. Kim ,  John S. Mitby ,  David P. Swart ,  Balsha R. Stanisic ,  Philip T. Wu

发明人： Delbert R. Cecchi ,  Hyung S. Kim ,  John S. Mitby ,  David P. Swart ,  Balsha R. Stanisic ,  Philip T. Wu

IPC分类号： H03K5/02 ,  H03K19/003 ,  H03K19/0185

CPC分类号： H03K19/018521 ,  H03K19/00361

摘要： A high speed, high performance CMOS to GPI interface circuit is disclosed. The interface circuit contains an input stage, clamping circuitry, an output stage and feedback circuitry. The clamping circuitry clamps the voltage level presented to the output stage at a level below the power supply voltage when the input from the CMOS circuit is at a high logic level. As the voltage level of the signal presented to the CPI circuitry rises, feedback circuitry feeds this signal back to the clamping circuitry, which in turn decreases the voltage level presented to the output stage. This assures the signal presented to the GPI circuit falls within the specified voltage level from 1.51 and 2.2 volts. The feedback circuitry contains a single pole filter that filters out high frequency reflections presented to the feedback circuitry, and a slew rate limiter that slows the rise and fall of the voltage level presented to the output stage thereby reducing noise on the power supply and ground lines. The feedback circuitry uses bilateral (push-pull) gain techniques to control the voltage level presented to the output stage as the input signal from the CMOS circuit swings from low to high logic levels. The interface circuit is made up exclusively from standard threshold FETs. The interface circuit also contains discharge circuitry that discharges the voltage level of the feedback circuitry when the input from the CMOS circuit changes from a high level to a low level, thereby preventing a latch-up condition.