-
1.发明授权High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer 有权在保护电介质层上具有自对准微型场缓和板的高电子迁移率晶体管公开(公告)号：US07750370B2
公开(公告)日：2010-07-06
申请号：US12003098
申请日：2007-12-20
申请人： Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
发明人： Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
IPC分类号： H01L29/778 , H01L21/338
CPC分类号： H01L29/7787 , H01L21/28587 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/42376 , H01L29/66462
摘要： A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.
摘要翻译： 半导体器件被制造为包括源极和漏极触点，其包括凹陷在阻挡层中的欧姆金属和沟道层的一部分; 保护介电层，设置在阻挡层上的源极和漏极接触之间; 设置在源极和保护电介质层之间以及保护电介质层和漏极接触之间的漏极和源极欧姆通孔中的金属化层; 以及设置在所述阻挡层上方的金属T型栅极，包括设置在所述金属T型栅极的杆的侧部上的场缓和板。
-
2.发明申请High electron mobility transistor having self-aligned miniature field mitigating plate and protective dielectric layer and fabrication method thereof 有权具有自对准微型场缓和板和保护性介电层的高电子迁移率晶体管及其制造方法公开(公告)号：US20100184262A1
公开(公告)日：2010-07-22
申请号：US12659910
申请日：2010-03-25
申请人： Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
发明人： Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
IPC分类号： H01L21/335
CPC分类号： H01L29/7787 , H01L21/28587 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/42376 , H01L29/66462
摘要： A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.
摘要翻译： 半导体器件被制造为包括源极和漏极触点，其包括凹陷在阻挡层中的欧姆金属和沟道层的一部分; 保护介电层，设置在阻挡层上的源极和漏极接触之间; 设置在源极和保护电介质层之间以及保护电介质层和漏极接触之间的漏极和源极欧姆通孔中的金属化层; 以及设置在所述阻挡层上方的金属T型栅极，包括设置在所述金属T型栅极的杆的侧部上的场缓和板。
-
3.发明授权Method of forming a high electron mobility transistor hemt, utilizing self-aligned miniature field mitigating plate and protective dielectric layer 有权形成高电子迁移率晶体管的方法，利用自对准微型场缓和板和保护电介质层公开(公告)号：US07897446B2
公开(公告)日：2011-03-01
申请号：US12659910
申请日：2010-03-25
申请人： Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
发明人： Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
IPC分类号： H01L21/338
CPC分类号： H01L29/7787 , H01L21/28587 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/42376 , H01L29/66462
摘要： A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.
摘要翻译： 半导体器件被制造为包括源极和漏极触点，其包括凹陷在阻挡层中的欧姆金属和沟道层的一部分; 保护介电层，设置在阻挡层上的源极和漏极接触之间; 设置在源极和保护电介质层之间以及保护电介质层和漏极接触之间的漏极和源极欧姆通孔中的金属化层; 以及设置在所述阻挡层上方的金属T型栅极，包括设置在所述金属T型栅极的杆的侧部上的场缓和板。
-
4.发明申请High electron mobility transistor having self-aligned miniature field mitigating plate and protective dielectric layer and fabrication method thereof 有权具有自对准微型场缓和板和保护电介质层的高电子迁移率晶体管及其制造方法公开(公告)号：US20090159930A1
公开(公告)日：2009-06-25
申请号：US12003098
申请日：2007-12-20
申请人： loulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
发明人： loulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L21/28587 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/42376 , H01L29/66462
摘要： A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.
摘要翻译： 半导体器件被制造为包括源极和漏极触点，其包括凹陷在阻挡层中的欧姆金属和沟道层的一部分; 保护介电层，设置在阻挡层上的源极和漏极接触之间; 设置在源极和保护电介质层之间以及保护电介质层和漏极接触之间的漏极和源极欧姆通孔中的金属化层; 以及设置在所述阻挡层上方的金属T型栅极，包括设置在所述金属T型栅极的杆的侧部上的场缓和板。
-
-
-
搜索结果
4 条记录 (耗时 0.012 秒)
