公开(公告)号：US07180923B2

公开(公告)日：2007-02-20

申请号：US10367200

申请日：2003-02-13

申请人： David Bour ,  Chaokun Lin ,  Michael Tan ,  Bill Perez

发明人： David Bour ,  Chaokun Lin ,  Michael Tan ,  Bill Perez

IPC分类号： H01S5/00

CPC分类号： H01S5/18358 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3235

摘要： An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.

摘要翻译： 公开了一种改进的隧道结结构和使用该结构的VCSEL。 隧道结包括第一层，第二层和第三层，包括InP材料系列的材料。 第一层掺杂有n型掺杂剂物质，浓度为每厘米3或更大的10 19掺杂剂原子。 第二层掺杂有类似浓度的Zn并与第一层接触。 第一和第二层之间的界面形成隧道结。 第三层包括阻止Zn扩散到第二层的材料。 第三层优选包括未掺杂的AlInAs。 本发明的隧道结结构可以用于具有由n型半导体层构成的第一和第二反射镜之间的有源层的VCSEL。