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公开(公告)号：US11973321B2
公开(公告)日：2024-04-30
申请号：US18326981
申请日：2023-05-31
发明人： Kazuhiro Sakai , Daisuke Iguchi , Takeshi Minamiru , Yoshinori Shirakawa , Tomoaki Sakita , Tsutomu Otsuka
IPC分类号： H01S5/42 , G01B11/24 , G01K7/22 , G02B5/02 , G02B27/42 , G06F3/044 , G06F21/32 , G06V10/145 , G06V20/64 , G06V40/16 , H01S5/02 , H01S5/02255 , H01S5/02257 , H01S5/02325 , H01S5/02345 , H01S5/026 , H01S5/042 , H01S5/068 , H01S5/0687 , H01S5/183 , H01S5/343 , H01S5/20 , H01S5/30
CPC分类号： H01S5/423 , G02B5/0278 , G02B27/4205 , G06V10/145 , G06V20/64 , G06V40/166 , H01S5/02255 , H01S5/02325 , H01S5/06804 , H01S5/0687 , H01S5/0206 , H01S5/04252 , H01S5/04254 , H01S5/18347 , H01S5/18361 , H01S5/2054 , H01S5/3054 , H01S5/34353
摘要： A light emitting device includes a wiring substrate, a light emitting element array that includes a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface connecting the first side surface and the second side surface to each other and facing each other, the light emitting element array being provided on the wiring substrate, a driving element that is provided on the wiring substrate on the first side surface side and drives the light emitting element array, a first circuit element and a second circuit element that are provided on the wiring substrate on the second side surface side to be arranged in a direction along the second side surface, and a wiring member that is provided on the third side surface side and the fourth side surface side and extends from a top electrode of the light emitting element array toward an outside of the light emitting element array.
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公开(公告)号：US11962128B2
公开(公告)日：2024-04-16
申请号：US18260739
申请日：2022-03-07
发明人： Donguk Nam , Youngmin Kim , Yongduck Jung , Daniel Burt , Hyo Jun Joo , Weijun Fan
CPC分类号： H01S5/3427 , H01S5/0424 , H01S5/04257 , H01S5/125 , H01S5/3054 , H01S5/3403
摘要： According to embodiments of the present invention, an optical device is provided. The optical device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer having a beam structure that is subjected to a tensile strain, wherein the beam structure includes a plurality of nanostructures, and wherein, for each nanostructure of the plurality of nanostructures, the nanostructure is configured to locally amplify the tensile strain at the nanostructure to define a strain-induced artificial quantum heterostructure for quantum confinement. According to a further embodiment of the present invention, a method of forming an optical device is also provided.
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公开(公告)号：US11936164B2
公开(公告)日：2024-03-19
申请号：US18326981
申请日：2023-05-31
发明人： Kazuhiro Sakai , Daisuke Iguchi , Takeshi Minamiru , Yoshinori Shirakawa , Tomoaki Sakita , Tsutomu Otsuka
IPC分类号： H01S5/42 , G01B11/24 , G01K7/22 , G02B5/02 , G02B27/42 , G06F3/044 , G06F21/32 , G06V10/145 , G06V20/64 , G06V40/16 , H01S5/02 , H01S5/02255 , H01S5/02257 , H01S5/02325 , H01S5/02345 , H01S5/026 , H01S5/042 , H01S5/068 , H01S5/0687 , H01S5/183 , H01S5/343 , H01S5/20 , H01S5/30
CPC分类号： H01S5/423 , G02B5/0278 , G02B27/4205 , G06V10/145 , G06V20/64 , G06V40/166 , H01S5/02255 , H01S5/02325 , H01S5/06804 , H01S5/0687 , H01S5/0206 , H01S5/04252 , H01S5/04254 , H01S5/18347 , H01S5/18361 , H01S5/2054 , H01S5/3054 , H01S5/34353
摘要： A light emitting device includes a wiring substrate, a light emitting element array that includes a first side surface and a second side surface facing each other, and a third side surface and a fourth side surface connecting the first side surface and the second side surface to each other and facing each other, the light emitting element array being provided on the wiring substrate, a driving element that is provided on the wiring substrate on the first side surface side and drives the light emitting element array, a first circuit element and a second circuit element that are provided on the wiring substrate on the second side surface side to be arranged in a direction along the second side surface, and a wiring member that is provided on the third side surface side and the fourth side surface side and extends from a top electrode of the light emitting element array toward an outside of the light emitting element array.
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公开(公告)号：US20240088628A1
公开(公告)日：2024-03-14
申请号：US18260739
申请日：2022-03-07
发明人： Donguk NAM , Youngmin KIM , Yongduck JUNG , Daniel BURT , Hyo Jun JOO , Weijun FAN
CPC分类号： H01S5/3427 , H01S5/0424 , H01S5/04257 , H01S5/125 , H01S5/3054 , H01S5/3403
摘要： According to embodiments of the present invention, an optical device is provided. The optical device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer having a beam structure that is subjected to a tensile strain, wherein the beam structure includes a plurality of nanostructures, and wherein, for each nanostructure of the plurality of nanostructures, the nanostructure is configured to locally amplify the tensile strain at the nanostructure to define a strain-induced artificial quantum heterostructure for quantum confinement. According to a further embodiment of the present invention, a method of forming an optical device is also provided.
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公开(公告)号：US20240022041A1
公开(公告)日：2024-01-18
申请号：US18252509
申请日：2021-11-12
CPC分类号： H01S5/026 , H01S5/3054 , H01S5/021 , H01S5/0421 , H01S5/2228
摘要： An optoelectronic component for integration into an optoelectronic circuit includes a III-V semiconductor membrane, a P-doped layer, an intrinsic layer deposited on the P layer, and an N-doped layer, deposited on the intrinsic layer; an asymmetrical photonic crystal waveguide, formed in the membrane by a two-dimensional photonic crystal on one longitudinal side and by a face with total internal reflection on the other longitudinal side; contacts arranged on either side of the PhC waveguide, for injecting electrical charge carriers into the PhC waveguide laterally with respect to the membrane; the layers arranged such that the intrinsic and N layers only partially cover the P layer, forming a side face extending perpendicularly from the surface of the P layer, a portion of the side face forming the face with total internal reflection of the PhC waveguide; the PhC waveguide is evanescently coupled to a passive semiconductor waveguide in a coupling region.
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公开(公告)号：US11757257B2
公开(公告)日：2023-09-12
申请号：US17487140
申请日：2021-09-28
发明人： Shui-Qing Yu , Yiyin Zhou , Wei Du
CPC分类号： H01S5/322 , H01S5/021 , H01S5/3223 , H01S5/3427 , H01S5/04256 , H01S5/3054 , H01S5/3077 , H01S5/32 , H01S5/3407 , H01S5/3426
摘要： A laser diode including a double heterostructure comprising a top layer, a buffer layer formed on a substrate, and an intrinsic active layer formed between the top layer and the buffer layer. The top layer and the buffer layer have opposite types of conductivity. The active layer has a bandgap smaller than that of the buffer layer or the top layer. The double heterostructure includes Ge, SiGe, GeSn, and/or SiGeSn materials.
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公开(公告)号：US20190157845A1
公开(公告)日：2019-05-23
申请号：US15819848
申请日：2017-11-21
发明人： Effendi Leobandung , Ning Li , Tak H. Ning
CPC分类号： H01S5/4031 , H01L21/02381 , H01L21/0243 , H01L21/02433 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02639 , H01L21/02647 , H01S5/0207 , H01S5/021 , H01S5/0424 , H01S5/0425 , H01S5/1017 , H01S5/166 , H01S5/2201 , H01S5/2206 , H01S5/2214 , H01S5/305 , H01S5/3054 , H01S5/323 , H01S5/34313 , H01S5/34353
摘要： A method of forming a pair of edge-emitting lasers is provided. The method includes forming a mesa from a substrate, forming a cover layer on the substrate around the mesa, and forming a first barrier layer on each of opposite sidewalls of the mesa. The method further includes forming a quantum well layer on each of the barrier layers, forming a second barrier layer on each of the quantum well layers, and forming a cladding layer on each of the second barrier layers.
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公开(公告)号：US20170365983A1
公开(公告)日：2017-12-21
申请号：US15627964
申请日：2017-06-20
CPC分类号： H01S5/34326 , G02B6/2746 , H01S5/026 , H01S5/1003 , H01S5/22 , H01S5/3054 , H01S5/5027 , H01S5/5063
摘要： An optical circulator is a device that routes optical pulses from port to port in a predetermined manner, e.g. in a 3-port optical circulator, optical pulses entering port 1 are routed out of port 2, while optical pulses entering port 2 exit out of port 3 and optical pulses fed into port 3 exit out of port 3. Currently such an optical circulator is made of discrete components such as magnetooptic garnets, rare-earth magnets and optical polarizers that are packaged together with fiber optic elements. Disclosed herein is a different kind of optical circulator that is monolithically integrated on a single semiconductor substrate and that is applicable for the routing of optical pulses. The embodied invention will enable photonic integrated circuits to incorporate on-chip optical circulator functionality thereby allowing much more complex optical designs to be implemented monolithically.
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公开(公告)号：US09793093B2
公开(公告)日：2017-10-17
申请号：US15185166
申请日：2016-06-17
发明人： Daisuke Morita , Hiroyuki Kawahara , Shinji Kimura
IPC分类号： H01L21/00 , H01J37/304 , H01S5/0625 , H01S5/343 , H01S5/40 , H01S5/00 , H01J37/305 , H01S5/026 , H01S5/12 , H01J37/302 , H01S5/30
CPC分类号： H01J37/304 , H01J37/3026 , H01J37/3053 , H01J37/3056 , H01J2237/24585 , H01J2237/30472 , H01J2237/3174 , H01S5/0014 , H01S5/0265 , H01S5/06256 , H01S5/12 , H01S5/3054 , H01S5/34306 , H01S5/34313 , H01S5/34326 , H01S5/3434 , H01S5/4087 , H01S2301/173
摘要： A semiconductor device manufacturing system includes: a PL evaluation apparatus that evaluates wavelengths of photoluminescent light produced by individual optical modulators on a single semiconductor wafer; an electron beam drawing apparatus that draws patterns of diffraction gratings of laser sections that adjoin respective optical modulators on the wafer; and a calculation section that receives the wavelengths of the photoluminescent light from the PL evaluation apparatus, calculates densities of respective diffraction gratings so that differences between the wavelengths of the photoluminescent light and oscillating wavelengths of the laser sections become a constant, and sends the densities calculated to the electron beam drawing apparatus for drawing respective diffraction grating patterns on the respective laser sections.
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公开(公告)号：US09627849B2
公开(公告)日：2017-04-18
申请号：US15059304
申请日：2016-03-03
发明人： Hidehiro Taniguchi , Yutaka Ohki
IPC分类号： H01S5/042 , H01S5/22 , H01S5/30 , H01L33/00 , H01L33/30 , B82Y20/00 , H01S5/028 , H01S5/20 , H01S5/343
CPC分类号： H01S5/0421 , B82Y20/00 , H01L33/005 , H01L33/305 , H01S5/028 , H01S5/2004 , H01S5/2068 , H01S5/2072 , H01S5/22 , H01S5/3054 , H01S5/3063 , H01S5/343 , H01S5/34313 , H01S2304/04
摘要： Provided is a semiconductor light device comprising a semiconductor substrate having a first conduction type; a first cladding layer having the first conduction type deposited above the semiconductor substrate; an active layer; a second cladding layer having a second conduction type; and a contact layer. The active layer includes a window portion that is disordered via diffusion of vacancies and a non-window portion having less disordering than the window portion, and the contact layer includes a first region and a second region that is below the first region and has greater affinity for hydrogen than the first region.
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