THERMOPILE INFRARED SENSOR BY MONOLITHIC SILICON MICROMACHINING
    2.
    发明申请
    THERMOPILE INFRARED SENSOR BY MONOLITHIC SILICON MICROMACHINING 有权
    通过单晶硅微电子学的热像红外传感器

    公开(公告)号:US20110174978A1

    公开(公告)日:2011-07-21

    申请号:US13005853

    申请日:2011-01-13

    IPC分类号: G01J5/20 G01J5/08

    摘要: A thermal infrared sensor is provided in a housing with optics and a chip with thermoelements on a membrane. The membrane spans a frame-shaped support body that is a good heat conductor, and the support body has vertical or approximately vertical walls. The object is to provide a thermopile infrared sensor in monolithic silicon micromachining technology, wherein the infrared sensor has a high thermal resolution capacity with a small chip size, a high degree of filling and a high response rate. The thermopile sensor structure consists of a few long thermoelements per sensor cell. The thermoelements being arranged on connecting webs that connect together hot contacts on an absorber layer to cold contacts of the thermoelements. The membrane is suspended by one or more connecting webs and has, on both sides of the long thermoelements, narrow slits that separate the connecting webs from both the central region and also the support body. At least the central region is covered by the absorber layer.

    摘要翻译: 热敏红外传感器设置在具有光学元件的壳体中,并且在膜上具有热电元件的芯片。 膜跨过一个良好导热体的框架形支撑体,支撑体具有垂直或大致垂直的壁。 目的是提供一种单片硅微加工技术中的热电堆红外传感器,其中红外传感器具有高的分辨率,具有小的芯片尺寸,高填充度和高响应率。 热电堆传感器结构由每个传感器单元的几个长的热电偶组成。 热电偶被布置在将吸收层上的热触点连接到热电偶的冷触点的连接腹板上。 膜通过一个或多个连接腹板悬挂,并且在长热电元件的两侧上具有将连接腹板与中心区域以及支撑体分开的狭窄狭缝。 至少中心区域被吸收层覆盖。