公开(公告)号：US07112831B2

公开(公告)日：2006-09-26

申请号：US10841775

申请日：2004-05-06

申请人： Jin-Ho Kim ,  Jong-Mil Youn ,  Bong-Hyun Choi

发明人： Jin-Ho Kim ,  Jong-Mil Youn ,  Bong-Hyun Choi

IPC分类号： H01L27/10 ,  H01L29/7694 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11 ,  G11C15/04 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/1104 ,  Y10S257/903

摘要： Ternary CAM cells are provided. The ternary CAM cell includes a pair of half cells. Each of the half cells includes an isolation layer formed at a predetermined region of a semiconductor substrate to define a match cell active region. A search gate electrode and a node gate electrode are placed to cross over the match cell active region. A match line is electrically connected to the match cell active region, which is adjacent to the node gate electrode and is located opposite the search gate electrode. An SRAM cell is provided at the semiconductor substrate adjacent to the match cell active region. The node gate electrode is electrically connected to one of a pair of storage nodes of the SRAM cell.

摘要翻译： 提供三元CAM单元。 三元CAM单元包括一对半单元。 每个半单元包括形成在半导体衬底的预定区域处以限定匹配单元有源区的隔离层。 搜索栅电极和节点栅电极被放置成跨越匹配单元有源区。 匹配线电连接到与节点栅电极相邻并且与搜索栅电极相对的匹配单元有源区。 SRAM单元设置在与匹配单元有源区相邻的半导体衬底处。 节点栅极电连接到SRAM单元的一对存储节点之一。