公开(公告)号：US07842916B2

公开(公告)日：2010-11-30

申请号：US12197052

申请日：2008-08-22

申请人： Dong-Hun Lee ,  Hae-Young Jeong ,  Byung-Cheol Cha ,  Sung-Jae Han

发明人： Dong-Hun Lee ,  Hae-Young Jeong ,  Byung-Cheol Cha ,  Sung-Jae Han

IPC分类号： G01N33/00

CPC分类号： G01N1/4055 ,  G01N30/96 ,  G01N2001/4061 ,  G03F1/84 ,  Y10T436/25125

摘要： A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.

摘要翻译： 公开了分析吸附在掩模的表面上用于图案形成半导体器件的离子的方法和使用其的装置。 离子分析方法包括：用预定量的溶剂填充主室内的加热容器; 将掩模浸入溶剂填充的加热容器中; 通过将气体供应到室中来将室的内部压力提高到预定水平; 通过在预定温度下将加热容器内的溶剂加热预定的时间，从而将掩模与掩模的表面分离; 并通过收集溶剂分析离子。

公开(公告)号：US20090101811A1

公开(公告)日：2009-04-23

申请号：US12197052

申请日：2008-08-22

申请人： Dong-Hun Lee ,  Hae-Young Jeong ,  Byung-Cheol Cha ,  Sung-Jae Han

发明人： Dong-Hun Lee ,  Hae-Young Jeong ,  Byung-Cheol Cha ,  Sung-Jae Han

IPC分类号： B01D59/44

CPC分类号： G01N1/4055 ,  G01N30/96 ,  G01N2001/4061 ,  G03F1/84 ,  Y10T436/25125

摘要： A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.

摘要翻译： 公开了分析吸附在掩模的表面上用于图案形成半导体器件的离子的方法和使用其的装置。 离子分析方法包括：用预定量的溶剂填充主室内的加热容器; 将掩模浸入溶剂填充的加热容器中; 通过将气体供应到室中来将室的内部压力提高到预定水平; 通过在预定温度下将加热容器内的溶剂加热预定的时间，从而将掩模与掩模的表面分离; 并通过收集溶剂分析离子。