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1.发明授权公开(公告)号：US07842916B2
公开(公告)日：2010-11-30
申请号：US12197052
申请日：2008-08-22
申请人： Dong-Hun Lee , Hae-Young Jeong , Byung-Cheol Cha , Sung-Jae Han
发明人： Dong-Hun Lee , Hae-Young Jeong , Byung-Cheol Cha , Sung-Jae Han
IPC分类号： G01N33/00
CPC分类号： G01N1/4055 , G01N30/96 , G01N2001/4061 , G03F1/84 , Y10T436/25125
摘要： A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.
摘要翻译： 公开了分析吸附在掩模的表面上用于图案形成半导体器件的离子的方法和使用其的装置。 离子分析方法包括：用预定量的溶剂填充主室内的加热容器; 将掩模浸入溶剂填充的加热容器中; 通过将气体供应到室中来将室的内部压力提高到预定水平; 通过在预定温度下将加热容器内的溶剂加热预定的时间，从而将掩模与掩模的表面分离; 并通过收集溶剂分析离子。
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2.发明申请公开(公告)号：US20090101811A1
公开(公告)日：2009-04-23
申请号：US12197052
申请日：2008-08-22
申请人： Dong-Hun Lee , Hae-Young Jeong , Byung-Cheol Cha , Sung-Jae Han
发明人： Dong-Hun Lee , Hae-Young Jeong , Byung-Cheol Cha , Sung-Jae Han
IPC分类号： B01D59/44
CPC分类号： G01N1/4055 , G01N30/96 , G01N2001/4061 , G03F1/84 , Y10T436/25125
摘要： A method of analyzing ions adsorbed on a surface of a mask for pattern formation of a semiconductor device, and an apparatus using the same are disclosed. The ion analyzing method includes: filling a heating container within a main chamber with a predetermined amount of a solvent; immersing a mask in the solvent-filled heating container; raising an internal pressure of the chamber to a predetermined level by supplying gas into the chamber; separating ions from a surface of the mask by heating the solvent within the heating container at a predetermined temperature for a predetermined period; and analyzing the ions by collecting the solvent.
摘要翻译： 公开了分析吸附在掩模的表面上用于图案形成半导体器件的离子的方法和使用其的装置。 离子分析方法包括：用预定量的溶剂填充主室内的加热容器; 将掩模浸入溶剂填充的加热容器中; 通过将气体供应到室中来将室的内部压力提高到预定水平; 通过在预定温度下将加热容器内的溶剂加热预定的时间，从而将掩模与掩模的表面分离; 并通过收集溶剂分析离子。
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公开(公告)号：US20090191471A1
公开(公告)日：2009-07-30
申请号：US12318510
申请日：2008-12-30
申请人： Dong-Hun Lee , Hae-Young Jeong , Sung-Jae Han , Han-Shin Lee
发明人： Dong-Hun Lee , Hae-Young Jeong , Sung-Jae Han , Han-Shin Lee
CPC分类号： C11D11/0047 , C11D3/3947 , C11D7/12 , C11D7/265 , G03F7/425
摘要： A composition for cleaning a phase shift mask, including an organic acid ammonium salt, wherein a base ionization constant (Kb) of organic acid ions is larger than an acid ionization constant (Ka) of ammonium ions, hydrogen peroxide, and water, and associated methods.
摘要翻译： 一种用于清洗包含有机酸铵盐的相移掩模的组合物，其中有机酸离子的碱电离常数（Kb）大于铵离子，过氧化氢和水的酸离子常数（Ka） 方法。
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公开(公告)号：US07601469B2
公开(公告)日：2009-10-13
申请号：US11758258
申请日：2007-06-05
申请人： Jeong-Yun Lee , Jin-Min Kim , Hae-Young Jeong , Young-Hwa No , Sang-Joon Yoon , Sung-Yong Cho
发明人： Jeong-Yun Lee , Jin-Min Kim , Hae-Young Jeong , Young-Hwa No , Sang-Joon Yoon , Sung-Yong Cho
CPC分类号： H01J37/32724 , G03F1/80 , H01J37/32009 , H01J2237/2001
摘要： A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.
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公开(公告)号：US20070292778A1
公开(公告)日：2007-12-20
申请号：US11811979
申请日：2007-06-13
申请人： Kyoung-Yoon Bang , Hae-Young Jeong , Yong-Hoon Kim , Yo-Han Choi , Hyung-Joo Lee
发明人： Kyoung-Yoon Bang , Hae-Young Jeong , Yong-Hoon Kim , Yo-Han Choi , Hyung-Joo Lee
CPC分类号： G01B11/24 , G03F7/70625 , G06T7/001 , G06T2207/30148
摘要： A method of measuring a critical dimension may include forming an object pattern on a substrate and forming a plurality of reference patterns on the substrate, wherein each of the plurality of reference patterns has a different critical dimension. An optical property of each of the plurality of reference patterns may be measured to provide a respective measured optical property for each of the reference patterns, and an optical property of the object pattern may be measured to provide a measured optical property of the object pattern. The measured optical property of the object pattern may be compared with the measured optical properties of the reference patterns, and a critical dimension of the object pattern may be determined as being the same as the critical dimension of the reference pattern having the measured optical property that is closest to the measured optical property of the object pattern. Related devices are also discussed.
摘要翻译： 测量临界尺寸的方法可以包括在衬底上形成对象图案并在衬底上形成多个参考图案，其中多个参考图案中的每一个具有不同的临界尺寸。 可以测量多个参考图案中的每一个的光学特性以为每个参考图案提供相应的测量光学特性，并且可以测量对象图案的光学特性以提供对象图案的测量光学特性。 可以将对象图案的测量光学性质与参考图案的测量光学性质进行比较，并且可以将对象图案的临界尺寸确定为与具有测量的光学性质的参考图案的临界尺寸相同， 最接近被测物体图案的光学特性。 还讨论了相关设备。
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公开(公告)号：US07803506B2
公开(公告)日：2010-09-28
申请号：US11811979
申请日：2007-06-13
申请人： Kyoung-Yoon Bang , Hae-Young Jeong , Yong-Hoon Kim , Yo-Han Choi , Hyung-Joo Lee
发明人： Kyoung-Yoon Bang , Hae-Young Jeong , Yong-Hoon Kim , Yo-Han Choi , Hyung-Joo Lee
CPC分类号： G01B11/24 , G03F7/70625 , G06T7/001 , G06T2207/30148
摘要： A method of measuring a critical dimension may include forming an object pattern on a substrate and forming a plurality of reference patterns on the substrate, wherein each of the plurality of reference patterns has a different critical dimension. An optical property of each of the plurality of reference patterns may be measured to provide a respective measured optical property for each of the reference patterns, and an optical property of the object pattern may be measured to provide a measured optical property of the object pattern. The measured optical property of the object pattern may be compared with the measured optical properties of the reference patterns, and a critical dimension of the object pattern may be determined as being the same as the critical dimension of the reference pattern having the measured optical property that is closest to the measured optical property of the object pattern. Related devices are also discussed.
摘要翻译： 测量临界尺寸的方法可以包括在衬底上形成对象图案并在衬底上形成多个参考图案，其中多个参考图案中的每一个具有不同的临界尺寸。 可以测量多个参考图案中的每一个的光学特性以为每个参考图案提供相应的测量光学特性，并且可以测量对象图案的光学特性以提供对象图案的测量光学特性。 可以将对象图案的测量光学性质与参考图案的测量光学性质进行比较，并且可以将对象图案的临界尺寸确定为与具有测量的光学性质的参考图案的临界尺寸相同， 最接近被测物体图案的光学特性。 还讨论了相关设备。
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公开(公告)号：US06980284B2
公开(公告)日：2005-12-27
申请号：US10381251
申请日：2001-09-20
申请人： Kang-Ho Ahn , Sang-Soo Kim , Hae-Young Jeong
发明人： Kang-Ho Ahn , Sang-Soo Kim , Hae-Young Jeong
CPC分类号： G01N15/065 , G01N15/14 , G01N2015/0049 , G01N2015/0681
摘要： A condensation particle counter measures the number of ultra-fine particles by growing the ultra-fine particles through a condensing process. The counter includes a capillary in which vapor of operating liquid is condensed and the ultra-fine particles grow. An insulating material surrounds the capillary to shut out heat flow between the capillary and the environment. The condensation particle counter can use various operating liquids including alcohol and water, and can be also applied to semiconductor clean rooms.
摘要翻译： 冷凝颗粒计数器通过冷凝过程生长超细颗粒来测量超细颗粒的数量。 计数器包括毛细管，其中工作液体的蒸气被冷凝并且超细颗粒生长。 绝缘材料围绕毛细管以截断毛细管和环境之间的热流。 冷凝颗粒计数器可以使用各种操作液体，包括酒精和水，也可以应用于半导体洁净室。
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