METHOD FOR DETERMINING ELECTRO-MIGRATION FAILURE MODE
    1.
    发明申请
    METHOD FOR DETERMINING ELECTRO-MIGRATION FAILURE MODE 有权
    确定电迁移故障模式的方法

    公开(公告)号:US20080184805A1

    公开(公告)日:2008-08-07

    申请号:US11729759

    申请日:2007-03-29

    IPC分类号: G01N3/00

    CPC分类号: G01R31/2858

    摘要: A method for testing integrated circuits includes forming a plurality of substantially identical first test structures, each comprising a first via structure connected to a first metal line, stress testing the plurality of first test structures to obtain a first plurality of failure times, and forming a plurality of substantially identical second test structures, each comprising a second via structure connected to a second metal line, wherein the second via structure has a substantially different reliability from the first via structure, and wherein the first metal line and the second metal line are substantially identical. The method further includes stress testing the plurality of second test structures to obtain a second plurality of failure times, and determining early failures of the plurality of first test structures and the plurality of second test structures.

    摘要翻译: 一种用于测试集成电路的方法包括形成多个基本上相同的第一测试结构,每个第一测试结构包括连接到第一金属线的第一通孔结构,测试多个第一测试结构以获得第一多个故障时间,以及形成 多个基本上相同的第二测试结构,每个包括连接到第二金属线的第二通孔结构,其中第二通孔结构具有与第一通孔结构基本上不同的可靠性,并且其中第一金属线和第二金属线基本相同 相同。 该方法还包括对多个第二测试结构进行压力测试以获得第二多个故障时间,以及确定多个第一测试结构和多个第二测试结构的早期故障。