Three-dimensional resistive random access memory and method making it possible to obtain such a memory

    公开(公告)号:US11985833B2

    公开(公告)日:2024-05-14

    申请号:US17312702

    申请日:2019-12-12

    发明人: Khalil El Hajjam

    IPC分类号: H10B63/00 H10N70/00

    摘要: A memory includes a memory cell including a planar electrode in a first plane; a floating electrode in a second plane, parallel to the first plane; a vertical electrode. The planar electrode includes a first part facing a first part of the floating electrode, the first part of the planar electrode and the first part of the second electrode being separated by a first layer of a first active material, the vertical electrode includes a part facing a second part of the floating electrode, the first part of the vertical electrode and the second part of the floating electrode being separated by a second layer of a second active material. The first active material forms a selector or a memory point and the second active material forms a memory point or a selector. The planar and floating electrodes not sharing any plane parallel to the first or second plane.