公开(公告)号：US20090086527A1

公开(公告)日：2009-04-02

申请号：US12073510

申请日：2008-03-06

申请人： Myoung-jae Lee ,  Young-soo Park ,  Chang-burn Lee

发明人： Myoung-jae Lee ,  Young-soo Park ,  Chang-burn Lee

IPC分类号： G11C11/21 ,  H01L21/16 ,  H01C17/075 ,  H01C17/18

CPC分类号： H01L27/101 ,  H01L27/24

摘要： Provided are a non-volatile memory device having a threshold switching resistor, a memory array including the non-volatile memory device, and methods of manufacturing the same. A non-volatile memory device having a threshold switching resistor may include a first resistor having threshold switching characteristics, an intermediate electrode on the first resistor, and a second resistor having at least two resistance characteristics on the intermediate electrode.

摘要翻译： 提供了具有阈值开关电阻器的非易失性存储器件，包括非易失性存储器件的存储器阵列及其制造方法。 具有阈值开关电阻器的非易失性存储器件可以包括具有阈值切换特性的第一电阻器，第一电阻器上的中间电极和在中间电极上具有至少两个电阻特性的第二电阻器。