公开(公告)号：US20060286460A1

公开(公告)日：2006-12-21

申请号：US11438965

申请日：2006-05-23

申请人： Sungmin Huh ,  Heebom Kim ,  Donggun Lee ,  Chanuk Jeon

发明人： Sungmin Huh ,  Heebom Kim ,  Donggun Lee ,  Chanuk Jeon

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F7/70425 ,  G03F1/50 ,  G03F7/70125 ,  G03F7/70566

摘要： A photomask according to the invention provides selective regional optimization of illumination type according to the type of image being formed using the photomask. The photomask include a light polarizing structure which polarizes the light incident on the polarizing structure. Light of a first illumination type from a source in a photolithographic exposure system is incident on the photomask. A portion of the light is incident on the region of the photomask that includes the polarizing structure, and another portion of the light is incident on another region of the photomask that does not include a polarizing structure. The illumination type of the light incident on the polarizing structure is changed to a second illumination type such that light incident on a substrate such as an integrated circuit wafer from the region of the photomask that has the polarizing structure is of the second illumination type. The illumination type of the portion of the light that is not incident on the polarizing structure is not changed, such that light from that portion of the photomask incident on another region of the wafer is of the first illumination type. By selectively regionally controlling illumination type in the photolithography process, resolution of the exposure system is optimized in all regions of the wafer.

公开(公告)号：US20110253043A1

公开(公告)日：2011-10-20

申请号：US13049336

申请日：2011-03-16

申请人： Seongyoon KIM ,  Chanuk JEON ,  Inkyun SHIN

发明人： Seongyoon KIM ,  Chanuk JEON ,  Inkyun SHIN

IPC分类号： B05C11/00

CPC分类号： H01L21/6715

摘要： In one embodiment, the nozzle includes a first body having an open lower surface and a plurality of buffer spaces to store a processing solution therein. A first shutter is disposed at a lower part of the first body to selectively open and close lower surfaces of the buffer spaces, and a driving unit configured to move the first shutter or the first body so that a position of the first shutter is varied relative to the buffer spaces.

摘要翻译： 在一个实施例中，喷嘴包括具有敞开的下表面的第一主体和用于在其中存储处理溶液的多个缓冲空间。 第一挡板设置在第一主体的下部，以选择性地打开和关闭缓冲空间的下表面;以及驱动单元，构造成使第一挡板或第一主体移动，使得第一挡板的位置相对变化 到缓冲区。

公开(公告)号：US20070065732A1

公开(公告)日：2007-03-22

申请号：US11446765

申请日：2006-06-05

申请人： Donggun Lee ,  Chanuk Jeon ,  Seongwoon Choi ,  Byunggook Kim

发明人： Donggun Lee ,  Chanuk Jeon ,  Seongwoon Choi ,  Byunggook Kim

IPC分类号： G03F1/00 ,  G03C5/00 ,  G21K5/00

CPC分类号： G03F1/50 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/60 ,  G21K1/062 ,  G21K2201/061

摘要： An approach to correcting non-uniformity of critical dimension (CD) in a semiconductor wafer includes measuring 0th-order light transmitted through or reflected from a photomask in a plurality of regions of the photomask. The photomask is altered to equalize the 0th-order light from the photomask such that the wafer CD is uniform. The photomask can be altered such as by forming a phase grating on the back side of the photomask or by introducing shadowing elements into the photomask to alter the transmittance of the photomask.

摘要翻译： 校正半导体晶片中的关键尺寸（CD）的不均匀性的方法包括测量在光掩模的多个区域中透过光掩模或从光掩模反射的第0级光。 改变光掩模以使来自光掩模的第0 - 次光均衡，使得晶片CD是均匀的。 可以改变光掩模，例如通过在光掩模的背面上形成相位光栅，或者通过将遮蔽元件引入光掩模来改变光掩模的透射率。

公开(公告)号：US07629087B2

公开(公告)日：2009-12-08

申请号：US11438965

申请日：2006-05-23

申请人： Sungmin Huh ,  Heebom Kim ,  Donggun Lee ,  Chanuk Jeon

发明人： Sungmin Huh ,  Heebom Kim ,  Donggun Lee ,  Chanuk Jeon

IPC分类号： G03F1/00

CPC分类号： G03F7/70425 ,  G03F1/50 ,  G03F7/70125 ,  G03F7/70566

摘要： A photomask according to the invention provides selective regional optimization of illumination type according to the type of image being formed using the photomask. The photomask include a light polarizing structure which polarizes the light incident on the polarizing structure. Light of a first illumination type from a source in a photolithographic exposure system is incident on the photomask. A portion of the light is incident on the region of the photomask that includes the polarizing structure, and another portion of the light is incident on another region of the photomask that does not include a polarizing structure. The illumination type of the light incident on the polarizing structure is changed to a second illumination type such that light incident on a substrate such as an integrated circuit wafer from the region of the photomask that has the polarizing structure is of the second illumination type. The illumination type of the portion of the light that is not incident on the polarizing structure is not changed, such that light from that portion of the photomask incident on another region of the wafer is of the first illumination type. By selectively regionally controlling illumination type in the photolithography process, resolution of the exposure system is optimized in all regions of the wafer.

摘要翻译： 根据本发明的光掩模根据使用光掩模形成的图像的类型提供对照明类型的选择性区域优化。 光掩模包括使入射在偏振结构上的光偏振的光偏振结构。 来自光刻曝光系统中的源的第一照明类型的光入射到光掩模上。 光的一部分入射到包括偏振结构的光掩模的区域，另一部分光入射到不包括偏光结构的光掩模的另一区域上。 入射到偏振结构的光的照明类型被改变为第二照明类型，使得从具有偏振结构的光掩模的区域入射到诸如集成电路晶片的基板上的光是第二照明类型。 不入射到偏振结构的光的部分的照明类型不改变，使得入射在晶片的另一区域上的光掩模的那部分的光是第一照明类型。 通过在光刻工艺中选择性地区域控制照明类型，在晶片的所有区域优化曝光系统的分辨率。