公开(公告)号：US4789885A

公开(公告)日：1988-12-06

申请号：US12977

申请日：1987-02-10

申请人： Jeffrey E. Brighton ,  Deems R. Hollingsworth ,  Michael Welch ,  Ronald E. McMann ,  Manuel L. Torreno, Jr. ,  Charles W. Sullivan

发明人： Jeffrey E. Brighton ,  Deems R. Hollingsworth ,  Michael Welch ,  Ronald E. McMann ,  Manuel L. Torreno, Jr. ,  Charles W. Sullivan

IPC分类号： H01L29/73 ,  H01L21/285 ,  H01L21/331 ,  H01L29/732 ,  H01L29/70

CPC分类号： H01L21/28525 ,  Y10S148/011 ,  Y10S148/147

摘要： A method of forming double polysilicon contacts to underlying diffused regions of a semiconductor body which includes forming first and second level electrically conductive silicon layers over the body which contact respective first and second diffused regions of the body. The diffused regions are formed such that said first diffused region is ringed by said second diffused region. The second silicon layer thus overlaps the first silicon layer. The top surfaces of the first and second silicon layers are silicided such that the silicide formed over the first silicon layer is aligned with the edge of the second silicon layer.

摘要翻译： 在半导体本体的下面扩散区域形成双重多晶硅接触的方法，该方法包括在主体上形成第一和第二级导电硅层，该层与本体的相应的第一和第二扩散区接触。 扩散区域形成为使得所述第一扩散区域被所述第二扩散区域环绕。 因此第二硅层与第一硅层重叠。 第一和第二硅层的顶表面被硅化，使得形成在第一硅层上的硅化物与第二硅层的边缘对准。