Thermoelectric element module and manufacturing method
    2.
    发明授权
    Thermoelectric element module and manufacturing method 有权
    热电元件模块及制造方法

    公开(公告)号:US08889453B2

    公开(公告)日:2014-11-18

    申请号:US13148007

    申请日:2010-02-04

    Applicant: Cheol-Hee Park

    Inventor: Cheol-Hee Park

    CPC classification number: H01L35/16 H01L35/04 H01L35/32 H01L35/34

    Abstract: A thermoelectric element module has P-type thermoelectric materials and N-type thermoelectric materials alternately joined between a pair of substrates. The thermoelectric materials include a thermoelectric mixture powder in which a thermoelectric material powder and a low-melting metal powder are mixed at a predetermined ratio. The thermoelectric mixture powder is thermally treated at a temperature lower than a melt point of the thermoelectric material, the thermoelectric mixture powder is formed as the low-melting metal is melted, and at the same time both ends of the thermoelectric materials are joined to the pair of substrates. A method for manufacturing such a thermoelectric material is also provided.

    Abstract translation: 热电元件模块具有交替地接合在一对基板之间的P型热电材料和N型热电材料。 热电材料包括以预定比例混合热电材料粉末和低熔点金属粉末的热电混合物粉末。 热电混合物粉末在低于热电材料的熔点的温度下进行热处理,在低熔点金属熔化时形成热电混合粉末,同时将热电材料的两端与 一对基板。 还提供了一种用于制造这种热电材料的方法。

    Compound semiconductors and their application
    4.
    发明授权
    Compound semiconductors and their application 有权
    复合半导体及其应用

    公开(公告)号:US08658063B2

    公开(公告)日:2014-02-25

    申请号:US13617064

    申请日:2012-09-14

    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnTez, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0

    Abstract translation: 公开了可用于太阳能电池或作为热电材料的新型化合物半导体及其应用。 化合物半导体可以由化学式:In x M y Co 4-m-a A m Sb 12 -n z-b X n Te z表示,其中M是选自Ca,Sr,Ba,Ti,V,Cr,Mn,Cu,Zn ,Ag,Cd,Sc,Y,La,Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb和Lu; A是选自Fe,Ni,Ru,Rh,Pd,Ir和Pt中的至少一种; X是选自Si,Ga,Ge和Sn中的至少一种; 0

    Compound semiconductors and their application
    5.
    发明授权
    Compound semiconductors and their application 有权
    复合半导体及其应用

    公开(公告)号:US08636925B2

    公开(公告)日:2014-01-28

    申请号:US13616679

    申请日:2012-09-14

    CPC classification number: C01G51/006 C01B19/002 H01L35/18

    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxCo4Sb12-n-zQ′nTez, where Q′ is at least one selected from the group consisting of O, S and Se, 0

    Abstract translation: 公开了可用于太阳能电池或作为热电材料的新型化合物半导体及其应用。 化合物半导体可以由化学式:In x Co 4 Sb 12 -n-z Q'nTez表示,其中Q'是选自O,S和Se中的至少一种,0

    COMPOUND SEMICONDUCTORS AND THEIR APPLICATION
    6.
    发明申请
    COMPOUND SEMICONDUCTORS AND THEIR APPLICATION 有权
    化合物半导体及其应用

    公开(公告)号:US20130015413A1

    公开(公告)日:2013-01-17

    申请号:US13617924

    申请日:2012-09-14

    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-zXnQ′z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q′ is at least one selected from the group consisting of O, S and Se; 0

    Abstract translation: 公开了可用于太阳能电池或作为热电材料的新型化合物半导体及其应用。 化合物半导体可以由以下化学式表示:In x M y Co 4-m-a A m S b 12 -n-z X n Q z,其中M是选自Ca,Sr,Ba,Ti,V,Cr,Mn,Cu中的至少一种 ,Zn,Ag,Cd,Sc,Y,La,Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb和Lu; A是选自Fe,Ni,Ru,Rh,Pd,Ir和Pt中的至少一种; X是选自Si,Ga,Ge和Sn中的至少一种; Q'是选自O,S和Se中的至少一种; 0

    COMPOUND SEMICONDUCTORS AND THEIR APPLICATION
    7.
    发明申请
    COMPOUND SEMICONDUCTORS AND THEIR APPLICATION 有权
    化合物半导体及其应用

    公开(公告)号:US20130009115A1

    公开(公告)日:2013-01-10

    申请号:US13618256

    申请日:2012-09-14

    Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQ′z, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; Q′ is at least one selected from the group consisting of O, S and Se; 0

    Abstract translation: 公开了可用于太阳能电池或作为热电材料的新型化合物半导体及其应用。 化合物半导体可以由化学式:In x M y Co 4-m-a A m S b 12 -n z-b X n Q z表示,其中M是选自Ca,Sr,Ba,Ti,V,Cr,Mn,Cu中的至少一种 ,Zn,Ag,Cd,Sc,Y,La,Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb和Lu; A是选自Fe,Ni,Ru,Rh,Pd,Ir和Pt中的至少一种; X是选自Si,Ga,Ge和Sn中的至少一种; Q'是选自O,S和Se中的至少一种; 0

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