Abstract:
A system and method of employing patterning process statistics to evaluate layouts for intersect area analysis includes applying Optical Proximity Correction (OPC) to the layout, simulating images formed by the mask and applying patterning process variation distributions to influence and determine corrective actions taken to improve and optimize the rules for compliance by the layout. The process variation distributions are mapped to an intersect area distribution by creating a histogram based upon a plurality of processes for an intersect area. The intersect area is analyzed using the histogram to provide ground rule waivers and optimization.
Abstract:
A method of transferring a pattern onto a substrate, in the fabrication of ICs, is disclosed. The substrate is coated with a photoresist layer, wherein the photoresist layer is selectively exposed and developed, producing sidewalls that exhibit roughness. The roughness is smoothened out by coating the photoresist layer with a coating layer.
Abstract:
A camera zoom lens consists of five lens elements arranged in two groups, in which the first three elements form a front lens group with a positive refractive power and the last two elements form a rear lens group with a negative refracting power. In the lens system, the front lens group is composed of a negative first lens element having its concave surface directed toward the object side of the lens system, a negative second lens element, and a positive third lens element; the rear lens group consists of a positive fourth lens element having its concave surface directed toward the object side of the lens system and a negative fifth lens element having its concave surface directed toward the object side of the lens system. The zoom lens system is suitable for use in a 35 mm lens shutter camera.
Abstract:
A zoom lens system consists of five lens elements arranged in two groups. Counting from the object side, the first three elements form a front lens group with positive refracting power and the last two elements form a rear lens group with negative refracting power. An airspace is reserved between the front lens group and the rear lens group and it is made variable for zooming. The first lens element in the front lens group is a negative meniscus lens element having its concave lens surface directed toward the object side. Both the second and third lenses in the front lens group are positive lens element. The fourth lens in the rear lens group is positive meniscus lens element, and the fifth lens is a lens element with negative refracting power. In the lens composition, both the front lens group and the rear lens group at least include an aspherical surface respectively.
Abstract:
A zoom lens system consists of five lens elements arranged in two groups, in which the first three elements form a front lens group with positive refracting power and the last two elements form a rear lens group with negative refracting power. In the lens system of the present invention, the front lens group is composed of a positive first lens element, a negative second lens element, and a positive third lens element; the rear lens group consists of a positive fourth lens element and a negative fifth negative lens element. The airspace between the front lens group and the rear lens group is variable for zooming operation. Both the front lens group and rear lens group comprise at least an aspheric lens elements.
Abstract:
A system and method of employing patterning process statistics to evaluate layouts for intersect area analysis includes applying Optical Proximity Correction (OPC) to the layout, simulating images formed by the mask and applying patterning process variation distributions to influence and determine corrective actions taken to improve and optimize the rules for compliance by the layout. The process variation distributions are mapped to an intersect area distribution by creating a histogram based upon a plurality of processes for an intersect area. The intersect area is analyzed using the histogram to provide ground rule waivers and optimization.
Abstract:
A system and method of employing patterning process statistics to evaluate layouts for intersect area analysis includes applying Optical Proximity Correction (OPC) to the layout, simulating images formed by the mask and applying patterning process variation distributions to influence and determine corrective actions taken to improve and optimize the rules for compliance by the layout. The process variation distributions are mapped to an intersect area distribution by creating a histogram based upon a plurality of processes for an intersect area. The intersect area is analyzed using the histogram to provide ground rule waivers and optimization.
Abstract:
A method and apparatus for the automatically inspecting the contours of a gear for manufacturing errors. According to the method, a gear to be inspected is imaged on an imaging surface to form a gear image. A digitized image indicative of the gear image is generated. The digitized image comprises a plurality of pixels. The pixels each have a gray value and coordinates which represent the location of the pixel within the digitized image. Each pixel is classified into a first or a second class by comparing the gray value of the pixel to a predetermined threshold value. The coordinates of pixels corresponding to the contours of the gear are determined from the classes of pixels. The manufacturing errors of the gear are calculated by comparing the coordinates of the pixels corresponding to the contours of the gear to a standard gear pattern. The apparatus, in its preferred embodiment, includes a base and collimated light source to illuminate the gear, a microscope to magnify an image of the gear and a CCD camera to generate a digitized image indicative of the magnified gear image. A digital computer is also included to assign a gray value to each pixel in the digitized image, to classify each pixel into a first or second class by comparing the gray value of the pixel with a predetermined threshold value, to determine the coordinates of pixels corresponding to the contours of the gear and to calculate the manufacturing errors of the gear by comparing the coordinates of pixels corresponding to the contours of the gear with a standard gear pattern. The manufacturing errors include runout error, pitch error and profile error.
Abstract:
A method is described for computing distance based and pattern density based design rules for the mask layout design of a VLSI chip so that the design satisfying the above design rules when manufactured on a wafer do not violate the specified tolerance on the critical dimensions (CD). The design rules are developed on the computed enclosed energy which is a convolution of the total optical energy and the pattern density of the mask. The total optical energy is the sum of the short range diffraction limited optical energy and the long range optical flare. The method steps for generating rules for a mask layout include: selecting a mask shape from a plurality thereof inputted from the mask layout, and determining a CD of the selected mask shape and a tolerance on variations of the CD; building a physical model of a component of the energy contributed by surrounding regions at a predetermined distance from the CD; using the physical model, computing the energy enclosed within the surrounding regions at the predetermined distance, and the maximum pattern density there of while remaining within the tolerance on variations of the CD; and outputting the maximum pattern density as a rule for the surrounding region at that distance.
Abstract:
A system and method of employing patterning process statistics to evaluate layouts for intersect area analysis includes applying Optical Proximity Correction (OPC) to the layout, simulating images formed by the mask and applying patterning process variation distributions to influence and determine corrective actions taken to improve and optimize the rules for compliance by the layout. The process variation distributions are mapped to an intersect area distribution by creating a histogram based upon a plurality of processes for an intersect area. The intersect area is analyzed using the histogram to provide ground rule waivers and optimization.