摘要:
Wireless communication apparatuses, header compression methods thereof, and header decompression method thereof are provided. The header compression method enables the transceiver to establish a tunnel for a user equipment, enables the processing unit to receive a first packet, enables the processing unit to generate a second packet comprising an outer header set and the first packet, enables the processing unit to replace the outer header set of the second packet with a replaced header, and enables the transceiver to transmit the second packet by the tunnel according to an identity recorded in the replaced header. The header decompression method decompresses the header compressed by the header compression method.
摘要:
A relay station and a backhaul connection method thereof are provided. The relay station adopts an NAS mechanism. A wireless communication system comprises the relay station, a base station, and a core network. The relay station comprises a processing unit and a transceiver. The processing unit enters a first state of the NAS mechanism after the relay station creates a radio connection with the core network. The transceiver transmits a backhaul connection request to the base station after the relay station enters the first state. The processing unit then enters a second state of the NAS mechanism after the transmission of the backhaul connection request. The transceiver then receives a backhaul connection response from the base station after the transmission of the backhaul connection request. The processing unit then enters the first state after the receipt of the backhaul connection response.
摘要:
Wireless communication apparatuses, header compression methods thereof, and header decompression method thereof are provided. The header compression method enables the transceiver to establish a tunnel for a user equipment, enables the processing unit to receive a first packet, enables the processing unit to generate a second packet comprising an outer header set and the first packet, enables the processing unit to replace the outer header set of the second packet with a replaced header, and enables the transceiver to transmit the second packet by the tunnel according to an identity recorded in the replaced header. The header decompression method decompresses the header compressed by the header compression method.
摘要:
A relay station and a backhaul connection method thereof are provided. The relay station adopts an NAS mechanism. A wireless communication system comprises the relay station, a base station, and a core network. The relay station comprises a processing unit and a transceiver. The processing unit enters a first state of the NAS mechanism after the relay station creates a radio connection with the core network. The transceiver transmits a backhaul connection request to the base station after the relay station enters the first state. The processing unit then enters a second state of the NAS mechanism after the transmission of the backhaul connection request. The transceiver then receives a backhaul connection response from the base station after the transmission of the backhaul connection request. The processing unit then enters the first state after the receipt of the backhaul connection response.
摘要:
A relay station and a backhaul control communication thereof are provided. A wireless communication system comprises the relay station, a base station, and a core network. The relay station is wirelessly connected to the base station, while the base station is wiredly connected to the core network. The relay station comprises a processing unit and a transceiver. The processing unit is configured to create a radio link having a control plane connection between the relay station and the base station and create a backhaul link between the relay station and the base station by the control plane connection of the radio link. The transceiver is configured to transmit a backhaul control message to the core network via the backhaul link.
摘要:
A method of manufacturing a MOS transistor, in which, a tri-layer photo resist layer is used to form a patterned hard mask layer having a sound shape and a small size, and the patterned hard mask layer is used to form a gate. Thereafter, by forming and defining a cap layer, a recess is formed through etching in the substrate. The patterned hard mask is removed after epitaxial layers are formed in the recesses. Accordingly, a conventional poly bump issue and an STI oxide loss issue leading to contact bridge can be avoided.
摘要:
The present invention provides a method for forming a metal-oxide-semiconductor (MOS) device and the structure thereof. The method includes at least the steps of forming a silicon germanium layer by the first selective epitaxy growth process and forming a cap layer on the silicon germanium layer by the second selective epitaxy growth process. Hence, the undesirable effects caused by ion implantation can be mitigated.
摘要:
A method for manufacturing a metal-oxide semiconductor (MOS) transistor includes providing a substrate having at least a gate structure and a shallow trench isolation (STI) formed thereon, performing a first etching process to form recesses in the substrate respectively at two sides of the gate structure, performing a selective epitaxial growth (SEG) process to form epitaxial silicon layers in the recesses respectively, accordingly a seam is formed in between the epitaxial silicon layer and the STI, forming a dielectric layer in the seam, and performing a self-aligned silicide (salicide) process.
摘要:
A method for manufacturing a metal-oxide semiconductor (MOS) transistor includes providing a substrate having at least a gate structure and a shallow trench isolation (STI) formed thereon, performing a first etching process to form recesses in the substrate respectively at two sides of the gate structure, performing a selective epitaxial growth (SEG) process to form epitaxial silicon layers in the recesses respectively, accordingly a seam is formed in between the epitaxial silicon layer and the STI, forming a dielectric layer in the seam, and performing a self-aligned silicide (salicide) process.
摘要:
A method for forming a metal-oxide-semiconductor (MOS) device includes at least steps of forming a pair of trenches in a substrate at both sides of a gate structure, filling the trenches with a silicon germanium layer by a selective epitaxy growth process, forming a cap layer on the silicon germanium layer by a selective growth process, and forming a pair of source/drain regions by performing an ion implantation process. Hence, the undesirable effects caused by ion implantation can be mitigated.