公开(公告)号：US07781140B2

公开(公告)日：2010-08-24

申请号：US11465375

申请日：2006-08-17

申请人： Chih-Min Tseng ,  Hsiu-Mei Yu ,  Wen-Hsiang Tseng ,  Chia-Jen Cheng ,  Yu-Lung Feng ,  Tung-Wen Hsieh

发明人： Chih-Min Tseng ,  Hsiu-Mei Yu ,  Wen-Hsiang Tseng ,  Chia-Jen Cheng ,  Yu-Lung Feng ,  Tung-Wen Hsieh

IPC分类号： G03F7/42 ,  B08B3/08 ,  B08B3/10

CPC分类号： G03F7/422

摘要： A method for removing dry film resist (DFR) from a fine pitch solder bump array on a semiconductor wafer provides for pre-soaking the wafer in a chemical bath then turbulently exposing the wafer to a chemical solution, both steps taking place in batch processing with the wafers processed in a vertical position. The wafers are then individually processed through a chemical spinning operation in which a chemical solution is dispensed from a spray nozzle while motion such as spinning is imparted the horizontally disposed wafer. The spin speed of the chemical spraying process may then be increased to accelerate physical removal of residue. Deionized water rinsing and spin-drying provide a solder bump array void of any DFR or other residuals.

摘要翻译： 从半导体晶片上的细间距焊料凸点阵列去除干膜抗蚀剂（DFR）的方法提供将晶片预浸在化学浴中，然后将晶片湍流地暴露于化学溶液，这两个步骤在批处理中发生， 晶片在垂直位置处理。 然后通过化学纺丝操作单独处理晶片，其中从喷雾喷嘴分配化学溶液，同时使诸如旋转的运动赋予水平设置的晶片。 然后可以增加化学喷涂过程的旋转速度以加速残留物的物理去除。 去离子水冲洗和旋转干燥提供无任何DFR或其他残留物的焊料凸块阵列。

公开(公告)号：US20050130437A1

公开(公告)日：2005-06-16

申请号：US10736948

申请日：2003-12-16

申请人： Chih-Min Tseng ,  Chien-Hsun Peng ,  Szu-Yao Wang ,  Chun-Yen Lo

发明人： Chih-Min Tseng ,  Chien-Hsun Peng ,  Szu-Yao Wang ,  Chun-Yen Lo

IPC分类号： C11D7/34 ,  C11D11/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461

CPC分类号： H01L21/31111 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/31133 ,  H01L21/67086

摘要： In accordance with the objectives of the invention a new method and apparatus is provided for the removal of by-products resulting from a dry-film removal process. The conventional method and apparatus for controlling a dry-film removal process is extended by the addition of a Dry-Film Remove Pre-Filter System, which significantly enhances the capability of filtering a dry-film removal solution.

摘要翻译： 根据本发明的目的，提供了一种新的方法和装置，用于除去由干膜去除过程产生的副产物。 通过添加干膜去除预过滤系统来延长用于控制干膜去除过程的常规方法和装置，其显着增强了干膜去除溶液的过滤能力。

公开(公告)号：US20080044756A1

公开(公告)日：2008-02-21

申请号：US11465375

申请日：2006-08-17

申请人： Chih-Min Tseng ,  Hsiu-Mei Yu ,  Wen-Hsiang Tseng ,  Chia-Jen Cheng ,  Y. L. Feng ,  Tung-Wen Hsieh

发明人： Chih-Min Tseng ,  Hsiu-Mei Yu ,  Wen-Hsiang Tseng ,  Chia-Jen Cheng ,  Y. L. Feng ,  Tung-Wen Hsieh

IPC分类号： G03C11/12

CPC分类号： G03F7/422

摘要： A method for removing dry film resist (DFR) from a fine pitch solder bump array on a semiconductor wafer provides for pre-soaking the wafer in a chemical bath then turbulently exposing the wafer to a chemical solution, both steps taking place in batch processing with the wafers processed in a vertical position. The wafers are then individually processed through a chemical spinning operation in which a chemical solution is dispensed from a spray nozzle while motion such as spinning is imparted the horizontally disposed wafer. The spin speed of the chemical spraying process may then be increased to accelerate physical removal of residue. Deionized water rinsing and spin-drying provide a solder bump array void of any DFR or other residuals.

摘要翻译： 从半导体晶片上的细间距焊料凸点阵列去除干膜抗蚀剂（DFR）的方法提供将晶片预浸在化学浴中，然后将晶片湍流地暴露于化学溶液，这两个步骤在批处理中发生， 晶片在垂直位置处理。 然后通过化学纺丝操作单独处理晶片，其中从喷雾喷嘴分配化学溶液，同时使诸如旋转的运动赋予水平设置的晶片。 然后可以增加化学喷涂过程的旋转速度以加速残留物的物理去除。 去离子水冲洗和旋转干燥提供无任何DFR或其他残留物的焊料凸块阵列。