公开(公告)号：US20080186758A1

公开(公告)日：2008-08-07

申请号：US11764624

申请日：2007-06-18

Applicant: Chih-Ta SHEN ,  Yung-Hung WANG ,  Cheng-Tying YEN ,  Kuei-Hung SHEN ,  Wei-Chuan CHEN ,  Shan-Yi YANG

Inventor： Chih-Ta SHEN ,  Yung-Hung WANG ,  Cheng-Tying YEN ,  Kuei-Hung SHEN ,  Wei-Chuan CHEN ,  Shan-Yi YANG

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer on the MTJ structure, the property of the magnetic memory device is improved, the magnetoresistance (MR) ratio is raised, and the time cost by the magnetic memory device to process data is effectively reduced.

Abstract translation: 磁存储器件包括衬底，设置在衬底上的磁隧道结（MTJ）结构，以及设置在MTJ结构上的覆盖层。 通过在MTJ结构上添加覆盖层，改善了磁存储器件的性能，提高了磁阻（MR）比，并且有效地减少了磁存储器件处理数据的时间成本。

公开(公告)号：US07606063B2

公开(公告)日：2009-10-20

申请号：US11764624

申请日：2007-06-18

Applicant: Chih-Ta Shen ,  Yung-Hung Wang ,  Cheng-Tying Yen ,  Kuei-Hung Shen ,  Wei-Chuan Chen ,  Shan-Yi Yang

Inventor： Chih-Ta Shen ,  Yung-Hung Wang ,  Cheng-Tying Yen ,  Kuei-Hung Shen ,  Wei-Chuan Chen ,  Shan-Yi Yang

IPC: G11C11/00 ,  H01L29/82

CPC classification number: G11C11/16

Abstract: A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer on the MTJ structure, the property of the magnetic memory device is improved, the magnetoresistance (MR) ratio is raised, and the time cost by the magnetic memory device to process data is effectively reduced.

Abstract translation: 磁存储器件包括衬底，设置在衬底上的磁隧道结（MTJ）结构，以及设置在MTJ结构上的覆盖层。 通过在MTJ结构上添加覆盖层，改善了磁存储器件的性能，提高了磁阻（MR）比，并且有效地减少了磁存储器件处理数据的时间成本。