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    Magnetic sensor
    1.
    发明授权
    Magnetic sensor 有权
    磁传感器

    公开(公告)号：US08633555B2

    公开(公告)日：2014-01-21

    申请号：US13451553

    申请日：2012-04-20

    申请人： Kuei-Hung Shen

    发明人： Kuei-Hung Shen

    IPC分类号： H01L29/82 ,  H01L21/02 ,  G11C11/22 ,  G11C11/15

    CPC分类号： G01R33/098

    摘要： A magnetic sensor suitable for sensing an external magnetic field includes a magnetic tunnel junction (MTJ) device. The MTJ device is used to sense an out-of-plane (Z-axis) component of the external magnetic field at a perpendicular direction to the MTJ device. The MTJ device includes a first pinned magnetic layer, a tunnel layer and a magnetic sensing layer. The first pinned magnetic layer has a pinned magnetization perpendicular to the first pinned magnetic layer. The tunnel layer is disposed on the first pinned magnetic layer. The magnetic sensing layer is disposed on the tunnel layer. The magnetic sensing layer has a critical thickness set to be within a range having a superparamagnetic property, in which an out-of-plane (Z-axis) magnetic sensitivity is larger than an in-plane (X-axis, Y-axis) magnetic sensitivity. The first pinned magnetic layer, the tunnel layer and the magnetic sensing layer are stacked in a forward sequence or a reverse sequence.

    摘要翻译： 适用于感测外部磁场的磁传感器包括磁隧道结（MTJ）装置。 MTJ装置用于在与MTJ装置垂直的方向上检测外部磁场的平面外（Z轴）分量。 MTJ装置包括第一固定磁性层，隧道层和磁感应层。 第一钉扎磁性层具有垂直于第一固定磁性层的钉扎磁化。 隧道层设置在第一钉扎磁性层上。 磁感应层设置在隧道层上。 磁感应层的临界厚度被设定在具有超顺磁性的范围内，其中外平面（Z轴）磁敏度大于平面内（X轴，Y轴） 磁敏感。 第一钉扎磁性层，隧道层和磁感测层以正向或反向顺序堆叠。

    Reader for magnetic shift register
    2.
    发明授权
    Reader for magnetic shift register 有权
    读写器用于磁移位寄存器

    公开(公告)号：US08467222B2

    公开(公告)日：2013-06-18

    申请号：US13284970

    申请日：2011-10-30

    申请人： Kuei-Hung Shen ,  Ching-Hsiang Tsai

    发明人： Kuei-Hung Shen ,  Ching-Hsiang Tsai

    IPC分类号： G11C19/00

    CPC分类号： G11C19/0808 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0841

    摘要： A reader for magnetic shift register is provided. The reader includes a magnetic reference layer, a tunneling layer, a magnetic canceling layer and an isolated layer. The magnetic reference layer and the magnetic canceling layer are respectively configured at different sides of a magnetic track for providing anti-parallel magnetic fields. The magnetic reference layer overlaps the magnetic canceling layer in a perpendicular direction of the magnetic track. The magnetic reference layer electrically connects to a readout circuit. The magnetic canceling layer is floating. The tunneling layer is configured between the magnetic reference layer and the magnetic track for providing a magnetic tunnel junction (MTJ). The isolated layer is configured between the magnetic canceling layer and the magnetic track for avoiding a current in the magnetic track from tunneling to the magnetic canceling layer.

    摘要翻译： 提供了一种用于磁移位寄存器的读卡器。 读取器包括磁参考层，隧道层，磁消除层和隔离层。 磁参考层和磁消除层分别配置在用于提供反平行磁场的磁道的不同侧。 磁性参考层在磁迹的垂直方向与磁性消除层重叠。 磁参考层电连接到读出电路。 磁性消除层是浮动的。 隧道层配置在磁参考层和磁轨之间，用于提供磁隧道结（MTJ）。 隔离层配置在磁消除层和磁道之间，以避免磁道中的电流从隧道到磁消除层。

    METHOD OF FORMING SELF-ALIGNED CONTACT VIA FOR MAGNETIC RANDOM ACCESS MEMORY
    4.
    发明申请
    METHOD OF FORMING SELF-ALIGNED CONTACT VIA FOR MAGNETIC RANDOM ACCESS MEMORY 审中-公开
    通过磁性随机访问存储器形成自对准接触的方法

    公开(公告)号：US20070172964A1

    公开(公告)日：2007-07-26

    申请号：US11308903

    申请日：2006-05-24

    申请人： Cheng-Tyng Yen ,  Wei-Chuan Chen ,  Kuei-Hung Shen

    发明人： Cheng-Tyng Yen ,  Wei-Chuan Chen ,  Kuei-Hung Shen

    IPC分类号： H01L21/00

    CPC分类号： H01L43/12

    摘要： A method of forming a self-aligned contact via for a MRAM is disclosed. A first conductive layer, a pinned layer, a tunneling barrier layer, a free layer, a capping layer and a first dielectric layer are formed sequentially over a substrate has formed lots of transistors and interconects. A portion of the first dielectric layer and the capping layer are removed until a surface of the free layer is exposed. A portion of the pinned layer, the tunneling barrier layer and the free layer are removed to form a MRAM device. A second dielectric layer is formed over the magnetic random access memory device. A planarization process is performed to form a planar surface of the second dielectric layer. The first dielectric layer and a portion of the second dielectric layer are removed to form a self-aligned contact opening. A second conductive layer is filled into the self-aligned contact opening.

    摘要翻译： 公开了一种形成用于MRAM的自对准接触通孔的方法。 在衬底上顺序地形成第一导电层，钉扎层，隧道势垒层，自由层，覆盖层和第一介电层，形成了许多晶体管和相互间的关系。 去除第一电介质层和覆盖层的一部分直到暴露自由层的表面。 钉扎层的一部分，隧道势垒层和自由层被去除以形成MRAM器件。 第二电介质层形成在磁性随机存取存储器件上。 进行平面化处理以形成第二电介质层的平坦表面。 去除第一电介质层和第二电介质层的一部分以形成自对准的接触开口。 将第二导电层填充到自对准接触开口中。

    Magnetic shift register and data accessing method
    5.
    发明授权
    Magnetic shift register and data accessing method 有权
    磁移位寄存器和数据访问方式

    公开(公告)号：US07843719B2

    公开(公告)日：2010-11-30

    申请号：US12365847

    申请日：2009-02-04

    申请人： Chien-Chung Hung ,  Kuei-Hung Shen

    发明人： Chien-Chung Hung ,  Kuei-Hung Shen

    IPC分类号： G11C11/00

    CPC分类号： G11C19/0841 ,  G11C11/14

    摘要： A magnetic shift register memory includes at least a magnetic memory track, in which multiple domain walls separate the memory track into multiple magnetic domains to serve as magnetic memory cells. A fixed number of the magnetic memory cells forms a memory unit to store a burst data. A read/write device is implemented between the memory units to read or write the burst data to the magnetic memory cells passing the read/write device. A flag unit records a flag value for each memory track or each memory unit to indicate whether the burst data is located at a first side or a second side of the read/write device. A current unit provides an operation current to the magnetic memory track according to the flag value to move the domain walls to pass the read/write device. After the read/write device reads or writes the burst data, the flag value is updated.

    摘要翻译： 磁移位寄存器存储器至少包括磁存储器轨道，其中多个畴壁将存储器轨道分离成多个磁畴以用作磁存储器单元。 固定数量的磁存储单元形成存储单元以存储突发数据。 在存储器单元之间实现读/写设备，以将突发数据读取或写入到通过读/写设备的磁存储单元。 标志单元记录每个存储器轨道或每个存储器单元的标志值，以指示突发数据是位于读/写设备的第一侧还是第二侧。 当前单元根据标志值向磁存储器轨道提供操作电流以移动畴壁以通过读/写设备。 在读/写设备读/写突发数据之后，更新标志值。

    MAGETIC SHIFT REGISTER AND DATA ACCESSING METHOD
    6.
    发明申请
    MAGETIC SHIFT REGISTER AND DATA ACCESSING METHOD 有权
    MAGETIC SHIFT寄存器和数据访问方法

    公开(公告)号：US20100118583A1

    公开(公告)日：2010-05-13

    申请号：US12365847

    申请日：2009-02-04

    申请人： Chien-Chung Hung ,  Kuei-Hung Shen

    发明人： Chien-Chung Hung ,  Kuei-Hung Shen

    IPC分类号： G11C19/00 ,  G11C11/416

    CPC分类号： G11C19/0841 ,  G11C11/14

    摘要： A magnetic shift register memory includes at least a magnetic memory track, in which multiple domain walls separate the memory track into multiple magnetic domains to serve as magnetic memory cells. A fixed number of the magnetic memory cells forms a memory unit to store a burst data. A read/write device is implemented between the memory units to read or write the burst data to the magnetic memory cells passing the read/write device. A flag unit records a flag value for each memory track or each memory unit to indicate whether the burst data is located at a first side or a second side of the read/write device. A current unit provides an operation current to the magnetic memory track according to the flag value to move the domain walls to pass the read/write device. After the read/write device reads or writes the burst data, the flag value is updated.

    摘要翻译： 磁移位寄存器存储器至少包括磁存储器轨道，其中多个畴壁将存储器轨道分离成多个磁畴以用作磁存储器单元。 固定数量的磁存储单元形成存储单元以存储突发数据。 在存储器单元之间实现读/写设备，以将突发数据读取或写入到通过读/写设备的磁存储单元。 标志单元记录每个存储器轨道或每个存储器单元的标志值，以指示突发数据是位于读/写设备的第一侧还是第二侧。 当前单元根据标志值向磁存储器轨道提供操作电流以移动畴壁以通过读/写设备。 在读/写设备读/写突发数据之后，更新标志值。

    Magnetic memory device
    7.
    发明授权
    Magnetic memory device 有权
    磁存储器件

    公开(公告)号：US07606063B2

    公开(公告)日：2009-10-20

    申请号：US11764624

    申请日：2007-06-18

    申请人： Chih-Ta Shen ,  Yung-Hung Wang ,  Cheng-Tying Yen ,  Kuei-Hung Shen ,  Wei-Chuan Chen ,  Shan-Yi Yang

    发明人： Chih-Ta Shen ,  Yung-Hung Wang ,  Cheng-Tying Yen ,  Kuei-Hung Shen ,  Wei-Chuan Chen ,  Shan-Yi Yang

    IPC分类号： G11C11/00 ,  H01L29/82

    CPC分类号： G11C11/16

    摘要： A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer on the MTJ structure, the property of the magnetic memory device is improved, the magnetoresistance (MR) ratio is raised, and the time cost by the magnetic memory device to process data is effectively reduced.

    摘要翻译： 磁存储器件包括衬底，设置在衬底上的磁隧道结（MTJ）结构，以及设置在MTJ结构上的覆盖层。 通过在MTJ结构上添加覆盖层，改善了磁存储器件的性能，提高了磁阻（MR）比，并且有效地减少了磁存储器件处理数据的时间成本。

    MAGNETIC TUNNEL JUNCTION DEVICES AND MAGNETIC RANDOM ACCESS MEMORY
    8.
    发明申请
    MAGNETIC TUNNEL JUNCTION DEVICES AND MAGNETIC RANDOM ACCESS MEMORY 有权
    磁性隧道接头设备和磁性随机存取存储器

    公开(公告)号：US20080094888A1

    公开(公告)日：2008-04-24

    申请号：US11676239

    申请日：2007-02-16

    申请人： Wei-Chuan Chen ,  Yung-Hung Wang ,  Shan-Yi Yang ,  Kuei-Hung Shen

    发明人： Wei-Chuan Chen ,  Yung-Hung Wang ,  Shan-Yi Yang ,  Kuei-Hung Shen

    IPC分类号： G11C11/15

    CPC分类号： G11C11/16 ,  Y10S977/935

    摘要： A magnetic random access memory (MRAM) is disclosed. The MRAM includes a first electrode, an antiferromagnetic layer formed over the first electrode, a pinned layer formed over the antiferromagnetic layer, a barrier layer formed over the pinned layer, a composite free layer formed over the barrier layer, and a second electrode formed over the composite free layer. The composite free layer includes a first magnetic layer, a spacer layer and a second magnetic layer sequentially stacked over the barrier layer and the spacer layer allows parallel coupling between the first and second magnetic layers. A magnetic tunnel junction (MTJ) device suitable for a memory unit of a magnetic memory device is also provided.

    摘要翻译： 公开了一种磁性随机存取存储器（MRAM）。 MRAM包括第一电极，形成在第一电极上的反铁磁层，形成在反铁磁层上的被钉扎层，形成在被钉扎层上的阻挡层，形成在阻挡层上的复合自由层，以及形成在第二电极上的第二电极 复合自由层。 复合自由层包括顺序层叠在阻挡层上的第一磁性层，间隔层和第二磁性层，间隔层允许第一和第二磁性层之间的平行耦合。 还提供了适用于磁存储器件的存储器单元的磁隧道结（MTJ）器件。