公开(公告)号：US20060094214A1

公开(公告)日：2006-05-04

申请号：US11199159

申请日：2005-08-09

Applicant: Chi-Ching Huang ,  Ching-Chu Tseng

Inventor： Chi-Ching Huang ,  Ching-Chu Tseng

IPC: H01L21/22 ,  H01L21/38

CPC classification number: H01L21/3003 ,  C30B31/02 ,  H01L21/2254

Abstract: A semiconductor doping process uses hydrogen in a diffusion furnace to prevent platinum/gold atoms from gathering around a defect area of the semiconductor wafer. Platinum/gold atom aggregation caused by a micro defect in the semiconductor wafer is prevented in order to stabilize the semiconductor doping process and to improve reverse recover time (TRR) to further improve yield rate.

Abstract translation: 半导体掺杂工艺在扩散炉中使用氢以防止铂/金原子聚集在半导体晶片的缺陷区周围。 为了稳定半导体掺杂工艺并改善反向恢复时间（TRR）以进一步提高产率，防止了由半导体晶片中的微缺陷引起的白金/金原子聚集。