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公开(公告)号:US5932894A
公开(公告)日:1999-08-03
申请号:US883106
申请日:1997-06-26
IPC分类号: H01L29/06 , H01L29/12 , H01L29/24 , H01L29/739 , H01L29/76 , H01L29/78 , H01L29/80 , H01L29/861 , H01L31/0256 , H01L31/0312
CPC分类号: H01L29/1608 , H01L29/0619 , H01L29/0657 , H01L29/7606
摘要: A semiconductor device of planar structure, comprises a pn junction, formed of a first type conducting layer and on top thereof a second type conducting layer, both layers of doped silicon carbide, the edge of the second of the layers being provided with an edge termination (JTE), enclosing stepwise or continuously decreasing effective sheet charge density towards the outer border of the termination, wherein the pn junction and its JTE are covered by a doped or undoped SiC third layer.
摘要翻译: 平面结构的半导体器件包括由第一类型导电层形成的pn结,并且在其顶部具有第二导电层,两层掺杂碳化硅,第二层的边缘设置有边缘终端 (JTE),围绕端接的外边界逐步或连续地降低有效片电荷密度,其中pn结及其JTE由掺杂或未掺杂的SiC第三层覆盖。