公开(公告)号：US20110221019A1

公开(公告)日：2011-09-15

申请号：US13038470

申请日：2011-03-02

Applicant: Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

Inventor： Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

IPC: H01L31/108

CPC classification number: H01L31/101 ,  H01L31/1085

Abstract: A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the “hot” carriers in the preferred direction “normal” to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent.

Abstract translation: 平面的基于波导的硅肖特基势垒光电检测器包括场板形式的第三端子，以提高检测器的响应度。 优选地，在其中形成其它硅化物接触区域的处理步骤期间形成用于检测区域的硅化物。 场板优选地形成为第一或第二CMOS金属化层的一部分，并且通过施加的电压来控制，以修改检测器硅化物层附近的电场。 通过修改电场，器件的响应度被“调谐”，以相对于器件的肖特基势垒调节“热”载流子（电子或空穴，取决于硅的导电性）的动量。 所施加的电位功能与“硅”载体的优势方向“正常”硅硅化物界面的动量方向相一致，允许增加的数量移动到肖特基势垒上并增加产生的光电流。

公开(公告)号：US07640288B2

公开(公告)日：2009-12-29

申请号：US10800543

申请日：2004-03-15

Applicant: Yinghua Yao ,  Mohammad Shabbir Alam ,  Vivek Bhanu ,  Warren V. Barkley ,  David Buerer ,  Denise Chen ,  Florin Teodorescu ,  Mark Huyler ,  John C. Krumm ,  Christopher J. Lang ,  Tim McGrath ,  Timothy M. Moore ,  Madhurima Pawar ,  Geoffrey Pease ,  Steven A. N. Shafer

Inventor： Yinghua Yao ,  Mohammad Shabbir Alam ,  Vivek Bhanu ,  Warren V. Barkley ,  David Buerer ,  Denise Chen ,  Florin Teodorescu ,  Mark Huyler ,  John C. Krumm ,  Christopher J. Lang ,  Tim McGrath ,  Timothy M. Moore ,  Madhurima Pawar ,  Geoffrey Pease ,  Steven A. N. Shafer

IPC: G06F15/16

CPC classification number: H04W4/02 ,  H04L67/18 ,  H04W4/60

Abstract: A method, schema and computer system for a location service provides data structures that are extensible by allowing different types of location awareness applications to retrieve and deposit location data. The method includes providing an abstract location object arranged in a schema to enable servicing a received request for a logical location of an electronic endpoint; and arranging one or more location elements within the context of the abstract location object. The location elements are configured to act as peers relative to the logical location and each location element is configured to act as a proxy relative to any other location element within the abstract location object.

Abstract translation: 用于位置服务的方法，模式和计算机系统通过允许不同类型的位置感知应用来检索和存储位置数据来提供可扩展的数据结构。 该方法包括提供布置在模式中的抽象位置对象，以便服务于电子端点的逻辑位置的接收到的请求; 以及在抽象位置对象的上下文中布置一个或多个位置元素。 位置元素被配置为相对于逻辑位置充当对等体，并且每个位置元素被配置为相对于抽象位置对象内的任何其他位置元素充当代理。

公开(公告)号：US08618625B2

公开(公告)日：2013-12-31

申请号：US13038470

申请日：2011-03-02

Applicant: Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

Inventor： Vipulkumar Patel ,  Prakash Gothoskar ,  Mark Webster ,  Christopher J. Lang

IPC: H01L31/0224

CPC classification number: H01L31/101 ,  H01L31/1085

Abstract: A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the “hot” carriers in the preferred direction “normal” to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent.

Abstract translation: 平面的基于波导的硅肖特基势垒光电检测器包括场板形式的第三端子，以提高检测器的响应度。 优选地，在其中形成其它硅化物接触区域的处理步骤期间形成用于检测区域的硅化物。 场板优选地形成为第一或第二CMOS金属化层的一部分，并且通过施加的电压来控制，以修改检测器硅化物层附近的电场。 通过修改电场，器件的响应度被“调谐”，以相对于器件的肖特基势垒调节“热”载流子（电子或空穴，取决于硅的导电性）的动量。 所施加的电位功能与“硅”载体的优势方向“正常”硅硅化物界面的动量方向相一致，允许增加的数量移动到肖特基势垒上并增加产生的光电流。