公开(公告)号：US20070040277A1

公开(公告)日：2007-02-22

申请号：US11550853

申请日：2006-10-19

申请人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

发明人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体加工中的局部金属沉淀形成（LMPF）的方法和结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US20050194689A1

公开(公告)日：2005-09-08

申请号：US10708486

申请日：2004-03-06

申请人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

发明人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

IPC分类号： H01L23/48

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体加工中的局部金属沉淀形成（LMPF）的方法和结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。