公开(公告)号：US06426558B1

公开(公告)日：2002-07-30

申请号：US09854890

申请日：2001-05-14

申请人： Jonathan Chapple-Sokol ,  Paul M. Feeney ,  Robert M. Geffken ,  David V. Horak ,  Mark P. Murray ,  Anthony K. Stamper

发明人： Jonathan Chapple-Sokol ,  Paul M. Feeney ,  Robert M. Geffken ,  David V. Horak ,  Mark P. Murray ,  Anthony K. Stamper

IPC分类号： H01L2348

CPC分类号： H01L23/485 ,  H01L21/76807 ,  H01L21/76849 ,  H01L21/76883 ,  H01L21/76885 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure is described which improves the manufacturability of integrated circuit interconnect and stud contacts in contact with semiconductor substrates and upper levels of metallization. The monolithic structure is formed from a thick layer of refractory metal. A variation in the monolithic structure is in the use of a dual damascene local interconnect portion of the structure which allows the local interconnect to pass over structures previously formed on the substrate.

摘要翻译： 描述了一种方法和结构，其改进了与半导体衬底接触的集成电路互连和螺柱触头的可制造性以及较高级别的金属化。 整体结构由难熔金属的厚层形成。 整体结构的变化是使用结构的双镶嵌局部互连部分，其允许局部互连通过先前形成在衬底上的结构。

公开(公告)号：US5603988A

公开(公告)日：1997-02-18

申请号：US459500

申请日：1995-06-02

申请人： Michael Shapiro ,  Ravi Kanjolia ,  Ben C. Hui ,  Paul F. Seidler ,  Karen Holloway ,  Richard Conti ,  Jonathan Chapple-Sokol

发明人： Michael Shapiro ,  Ravi Kanjolia ,  Ben C. Hui ,  Paul F. Seidler ,  Karen Holloway ,  Richard Conti ,  Jonathan Chapple-Sokol

IPC分类号： C23C16/18 ,  C23C16/34 ,  C23C16/42

CPC分类号： C23C16/18 ,  C23C16/34

摘要： Titanium and/or tantalum nitrides or nitride silicides are deposited onto a substrate by chemical vapor deposition of a titanium and/or tantalum silylamido complex.

摘要翻译： 钛和/或钽氮化物或氮化硅硅化物通过化学气相沉积钛和/或钽硅烷酰氨基复合物沉积到基底上。

公开(公告)号：US20050253265A1

公开(公告)日：2005-11-17

申请号：US10709562

申请日：2004-05-13

申请人： Steven Barkyoumb ,  Jonathan Chapple-Sokol ,  Edward Cooney ,  Keith Downes ,  Thomas McDevitt ,  William Murphy

发明人： Steven Barkyoumb ,  Jonathan Chapple-Sokol ,  Edward Cooney ,  Keith Downes ,  Thomas McDevitt ,  William Murphy

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76873

摘要： A method and structure for reducing the corrosion of the copper seed layer during the fabrication process of a semiconductor structure. Before the structure (or the wafer containing the structure) exits the vacuum environment of the sputter tool, the structure is warmed up to a temperature above the water condensation temperature of the environment outside the sputter tool. As a result, water vapor would not condense on the structure when the structure exits the sputter tool, and therefore, corrosion of the seed layer by the water vapor is prevented. Alternatively, a protective layer resistant to water vapor can be formed on top of the seed layer before the structure exits the sputter tool environment. In yet another alternative embodiment, the seed layer can comprises a copper alloy (such as with aluminum) which grows a protective layer resistant to water vapor upon exposure to water vapor.

摘要翻译： 一种用于在半导体结构的制造过程中减少铜籽晶层的腐蚀的方法和结构。 在结构（或包含结构的晶片）离开溅射工具的真空环境之前，将结构加热到高于溅射工具外部环境的水冷凝温度的温度。 结果，当结构离开溅射工具时，水蒸气不会在结构上冷凝，因此防止了水蒸气对种子层的腐蚀。 或者，在结构离开溅射工具环境之前，可以在籽晶层的顶部形成耐水蒸汽的保护层。 在另一替代实施例中，种子层可以包括铜合金（例如用铝），其在暴露于水蒸汽时生长出耐水蒸气的保护层。

公开(公告)号：US20070155164A1

公开(公告)日：2007-07-05

申请号：US11687017

申请日：2007-03-16

申请人： Steven Barkyoumb ,  Jonathan Chapple-Sokol ,  Edward Cooney ,  Keith Downes ,  Thomas McDevitt ,  William Murphy

发明人： Steven Barkyoumb ,  Jonathan Chapple-Sokol ,  Edward Cooney ,  Keith Downes ,  Thomas McDevitt ,  William Murphy

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76873

摘要： A method and structure for reducing the corrosion of the copper seed layer during the fabrication process of a semiconductor structure. Before the structure (or the wafer containing the structure) exits the vacuum environment of the sputter tool, the structure is warmed up to a temperature above the water condensation temperature of the environment outside the sputter tool. As a result, water vapor would not condense on the structure when the structure exits the sputter tool, and therefore, corrosion of the seed layer by the water vapor is prevented. Alternatively, a protective layer resistant to water vapor can be formed on top of the seed layer before the structure exits the sputter tool environment. In yet another alternative embodiment, the seed layer can comprises a copper alloy (such as with aluminum) which grows a protective layer resistant to water vapor upon exposure to water vapor.

摘要翻译： 一种用于在半导体结构的制造过程中减少铜籽晶层的腐蚀的方法和结构。 在结构（或包含结构的晶片）离开溅射工具的真空环境之前，将结构加热到高于溅射工具外部环境的水冷凝温度的温度。 结果，当结构离开溅射工具时，水蒸气不会在结构上冷凝，因此防止了水蒸气对种子层的腐蚀。 或者，在结构离开溅射工具环境之前，可以在籽晶层的顶部形成耐水蒸汽的保护层。 在另一替代实施例中，种子层可以包括铜合金（例如用铝），其在暴露于水蒸汽时生长出耐水蒸气的保护层。

公开(公告)号：US20070040277A1

公开(公告)日：2007-02-22

申请号：US11550853

申请日：2006-10-19

申请人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

发明人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体加工中的局部金属沉淀形成（LMPF）的方法和结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US20050194689A1

公开(公告)日：2005-09-08

申请号：US10708486

申请日：2004-03-06

申请人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

发明人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

IPC分类号： H01L23/48

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体加工中的局部金属沉淀形成（LMPF）的方法和结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。